Diamond die

Patent metadata

Field	Value
Publication number	US-2018207697-A1
Application number	US-201615745849-A
Country	US
Kind code	A1
Filing date	Jul 22, 2016
Priority date	Jul 22, 2015
Publication date	Jul 26, 2018
Grant date	—

Abstract

A diamond die includes a diamond provided with a hole for drawing a wire material, the diamond being a CVD single-crystal diamond, an axis of the hole being inclined relative to a normal direction of a crystal plane of the diamond.

First claim

1 . A diamond die comprising a diamond provided with a hole for drawing a wire material,
the diamond being a CVD single-crystal diamond, an axis of the hole being inclined relative to a normal direction of a crystal plane of the diamond.

2 . The diamond die according to claim 1 , wherein the axis of the hole is inclined relative to the normal direction of the crystal plane of the diamond by 0.1° to 15°.

3 . The diamond die according to claim 1 , wherein upper and lower surfaces of the diamond are surfaces inclined relative to a ( 110 ) plane by 0.1° to 15°.

4 . The diamond die according to claim 1 , wherein upper and lower surfaces of the diamond are surfaces inclined relative to a ( 100 ) plane by 0.1° to 15°.

5 . The diamond die according to claim 1 , wherein upper and lower surfaces of the diamond are surfaces inclined relative to a ( 111 ) plane by 0.1° to 15°.

6 . The diamond die according to claim 1 , wherein
the hole includes a reduction portion, a bearing portion having a diameter D, a back relief portion, and an exit portion in a direction from an upstream side to a downstream side of flow of the wire material so as to define the hole, and a length of the bearing portion is more than or equal to 0.4 D and less than or equal to 1.5 D in a shape of the hole in a cross section along the axis of the hole.

7 . The diamond die according to claim 6 , wherein the diameter D is less than 50 μm, and a cross sectional shape of the hole from the back relief portion to the exit portion is a recessed curve shape.

8 . The diamond die according to claim 1 , wherein the diamond die is used with an area reduction ratio of more than or equal to 8% and less than or equal to 25% during the wire drawing.

9 . The diamond die according to claim 1 , wherein the diamond die is used for drawing any one of metal wires or wires in which various types of metal plating are provided to the metal wires, the metal wires including a copper-based metal wire, an iron-based metal wire, a gold wire, a silver wire, a brass wire, an aluminum wire, an aluminum alloy wire, and a tungsten wire.

10 . The diamond die according to claim 1 , wherein a single-crystal diamond is used for the diamond, and in an X-ray topography image for a crystal growth main surface of the single-crystal diamond, groups of crystal defect points are gathered, each of the crystal defect points being a tip point of a crystal defect line reaching the crystal growth main surface, the crystal defect line representing a line in which a crystal defect exists, and a density of the crystal defect points is more than 2 mm −2 .

11 . The diamond die according to claim 10 , wherein a density of combined dislocation points of the crystal defect points is more than 2 mm −2 , each of the combined dislocation points being a tip point of a combined dislocation reaching the crystal growth main surface, the combined dislocation resulting from a combination of at least either of a plurality of edge dislocations and a plurality of screw dislocations.

12 . The diamond die according to claim 10 , wherein the diamond includes two main surfaces and a plurality of single-crystal diamond layers located between the two main surfaces, and the crystal defect line is branched into a plurality of crystal defect lines at a boundary between the two single-crystal diamond layers to increase the number of the crystal defect lines toward one of the main surfaces.

13 . The diamond die according to claim 10 , wherein a plurality of crystal defect line-like gathered regions exist in parallel, and in the plurality of crystal defect line-like gathered regions, groups of the crystal defect points extend in a form of lines.

14 . The diamond die according to claim 10 , wherein more than or equal to 1 ppm of nitrogen atoms are contained as impurity atoms in the single-crystal diamond, and the nitrogen atoms are nitrogen atoms other than isolated substitutional nitrogen atoms.

15 . The diamond die according to claim 10 , wherein a transmittance for 400-nm light is less than or equal to 60% when a thickness of the single-crystal diamond is measured to be 500 μm or is converted into 500 μm.

16 . The diamond die according to claim 1 , wherein the axis of the hole is inclined relative to the normal direction of the crystal plane of the diamond by 1° to 8°.

17 . The diamond die according to claim 1 , wherein the crystal plane of the diamond is one of a ( 110 ) plane, a ( 100 ) plane and a ( 111 ) plane.

Assignees

• Sumitomo Electric Hardmetal Corp
• Sumitomo Electric Industries
• Almt Corp

Inventors

• Yukawa Makoto
• Suemitsu Bunya
• Kinoshita Takuya
• Sumimoto Shigetoshi
• Kobayashi Yutaka
• Ueda Akihiko
• Tatsumi Natsuo
• Nishibayashi Yoshiki
• Sumiya Hitoshi

Classifications

• C23C16/27

  Diamond only · CPC title

• C30B29/04 Primary

  Diamond · CPC title

• C30B25/105

  by irradiation or electric discharge · CPC title

• B21C3/025 Primary

  comprising diamond parts · CPC title

• C30B25/20

  the substrate being of the same materials as the epitaxial layer · CPC title