Optical isolation systems and circuits and photon detectors with extended lateral p-n junctions

Patent metadata

Field	Value
Publication number	US-2018190855-A1
Application number	US-201715612327-A
Country	US
Kind code	A1
Filing date	Jun 2, 2017
Priority date	Dec 30, 2016
Publication date	Jul 5, 2018
Grant date	—

Abstract

Disclosed examples include lateral photovoltaic sensors and systems with one or more semiconductor structures individually including a lateral sensor face to receive photons of a given wavelength, and an extended lateral junction region having an effective junction distance greater than 5 times an absorption depth for the semiconductor structure that corresponds to the given wavelength, to facilitate high current transfer ratios for use in low-noise, high-efficiency power supply applications as well as optically isolated data transfer or photon detector applications.

First claim

The following is claimed:

1 . An isolation circuit, comprising:
a light source configured to generate a light signal of a given wavelength along an optical path; and a light sensor spaced by an optical channel distance from the light source, the light sensor comprising:
a semiconductor structure, including:
a top,
a bottom,
a front side at least partially facing the optical path to provide a sensor face to receive the light signal,
a back side spaced from the front side,
a plurality of lateral sides extending vertically between the top and the bottom, the lateral sides extending horizontally between the front side and the back side,
a p-doped portion including p-type dopants, the p-doped portion extending along at least a portion of the bottom, and
an n-doped portion including n-type dopants at least partially adjacent to the p-doped portion to form at least one p-n junction extending between the front side and the back side by an effective junction distance, the n-doped portion extending along at least a portion of the top, the effective junction distance being greater than a constant K times an absorption depth for the semiconductor structure that corresponds to the given wavelength, K being greater than or equal to 5.

2 . The isolation circuit of claim 1 , wherein the semiconductor structure includes a plurality of n-doped portions including n-type dopants to form a plurality of p-n junctions throughout substantially the entire effective junction distance between the front side and the back side.

3 . The isolation circuit of claim 1 , wherein the semiconductor structure further includes a reflective material on at least one of the top, the bottom, the backside, and the lateral sides.

4 . The isolation circuit of claim 1 , wherein K is greater than or equal to 10.

5 . The isolation circuit of claim 1 , wherein K is greater than or equal to 20.

6 . The isolation circuit of claim 1 , wherein the semiconductor structure includes silicon.

7 . The isolation circuit of claim 1 , wherein the light sensor comprises a plurality of semiconductor structures, each semiconductor structure including:
a top; a bottom; a front side at least partially facing the optical path to provide a sensor face to receive the light signal; a back side spaced from the front side; a plurality of lateral sides extending vertically between the top and the bottom, the lateral sides extending horizontally between the front side and the back side; a p-doped portion including p-type dopants, the p-doped portion extending along at least a portion of the bottom; and an n-doped portion including n-type dopants at least partially adjacent to the p-doped portion to form at least one p-n junction extending between the front side and the back side by an effective junction distance, the n-doped portion extending along at least a portion of the top, the effective junction distance being greater than a constant K times an absorption depth for the semiconductor structure that corresponds to the given wavelength, K being greater than or equal to 5.

8 . The isolation circuit of claim 7 , wherein each semiconductor structure includes a plurality of n-doped portions including n-type dopants to form a plurality of p-n junctions throughout substantially the entire effective junction distance between the front side and the back side.

9 . The isolation circuit of claim 7 , wherein each semiconductor structure further includes a reflective material on at least one of the top, the bottom, the backside, and the lateral sides.

10 . The isolation circuit of claim 7 , further comprising a switching circuit to electrically interconnect the p-n junctions of the plurality of semiconductor structures.

11 . The isolation circuit of claim 1 , comprising a regulator circuit to provide a power supply signal based on an electrical signal from the light sensor.

12 . The isolation circuit of claim 1 , further comprising:
a leadframe structure, including a plurality of electrical conductors, the light source being electrically coupled with a first pair of the electrical conductors of the leadframe structure, and the light sensor being electrically coupled with a second pair of the electrical conductors of the leadframe structure; and a molded package structure enclosing the light source, the light sensor and portions of the leadframe structure, the molded package structure exposing portions of the first and second pairs of the electrical conductors to allow external connection to the light source and the light sensor.

13 . The isolation circuit of claim 12 , further comprising an optical transmission medium disposed along the optical path between the light source and the light sensor.

14 . The isolation circuit of claim 1 , wherein the light sensor further includes:
a capacitor coupled between the p-doped portion and the n-doped portion; and a resistor coupled between a bias voltage and the n-doped portion to charge the capacitor to a voltage to bias the p-n junction near an avalanche voltage to allow capture of a photon by the p-n junction to cause the p-n junction to conduct an avalanche current to discharge the capacitor to generate a signal representing capture of the photon.

15 . An optical sensor circuit to sense a light signal of a given wavelength along an optical path, comprising:
a semiconductor structure, including a top, a bottom, a front side at least partially facing the optical path, a back side spaced from the front side, and a plurality of lateral sides extending vertically between the top and the bottom, the lateral sides extending horizontally between the front side and the back side; and a p-n junction formed in the semiconductor structure, the p-n junction extending between the front side and the back side by an effective junction distance greater than a constant K times an absorption depth for the semiconductor structure that corresponds to the given wavelength, K being greater than or equal to 5.

16 . The optical sensor circuit of claim 15 , wherein the p-n junction includes:
a p-doped portion including p-type dopants, the p-doped portion extending along at least a portion of the bottom; and an n-doped portion including n-type dopants extending along at least a portion of the top at least partially adjacent to the p-doped portion to form the p-n junction.

17 . The optical sensor circuit of claim 15 , further comprising a plurality of n-doped portions including n-type dopants to form a plurality of p-n junctions throughout substantially the entire effective junction distance between the front side and the back side.

18 . The optical sensor circuit of claim 15 , comprising a regulator circuit to provide a power supply signal based on an electrical signal from the p-n junction.

19 . The optical sensor circuit of claim 15 , further comprising:
a capacitor coupled between a p-doped portion of the p-n junction and an n-doped portion of the p-n junction; and a resistor coupled between a bias voltage and the n-doped portion to charge the capacitor to a voltage to bias the p-n junction near an avalanche voltage to allow capture of a photon by the p-n junction to cause the p-n junction to conduct an avalanche current to discharge the capacitor to generate a signal representing capture of the photon.

20 . A lateral multi-stage photovoltaic sensor system, comprising:
a plurality of silicon structures, individually including a top, a bottom, a front side to provide a sensor face to receive photons of a g

Assignees

• Texas Instruments Inc

Inventors

• Male Barry Jon

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W90/752

  between stacked chips · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title