Developer, pattern forming method, and electronic device manufacturing method

Patent metadata

Field	Value
Publication number	US-2018186907-A1
Application number	US-201715849690-A
Country	US
Kind code	A1
Filing date	Dec 21, 2017
Priority date	Jun 23, 2015
Publication date	Jul 5, 2018
Grant date	—

Abstract

Provided is a pattern forming method including the successive steps of: a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive composition; an exposure step of exposing the resist film; a step of developing the exposed resist film using a developer, and a step of rinsing the developed resist film using a rinsing liquid containing an organic solvent. The developer includes a ketone-based or ether-based solvent having a branched alkyl group. The organic solvent contained in the rinsing liquid includes an ether-based solvent having a branched alkyl group.

First claim

What is claimed is:

1 . A pattern forming method comprising the successive steps of:
a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive composition, an exposure step of exposing the resist film, a step of developing the exposed resist film using a developer, and a step of rinsing the developed resist film using a rinsing liquid containing an organic solvent, wherein the developer includes a ketone-based or ether-based solvent having a branched alkyl group, and the organic solvent contained in the rinsing liquid includes an ether-based solvent having a branched alkyl group.

2 . The pattern forming method according to claim 1 , wherein the ketone-based or ether-based solvent having a branched alkyl group included in the developer has 6 or more carbon atoms and 1 heteroatom.

3 . The pattern forming method according to claim 1 , wherein the actinic ray-sensitive or radiation-sensitive composition contains a resin containing a repeating unit represented by General Formula (1):

in General Formula (1),
A represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, or a cyano group,
R represents a halogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, an aralkyl group, an alkoxy group, an alkylcarbonyloxy group, an alkylsulfonyloxy group, an alkyloxycarbonyl group, or an aryloxycarbonyl group; in the case where there are a plurality of R′s, they may be the same or different; and in the case of having a plurality of R's, they may form a ring in cooperation with each other,
a represents an integer of 1 to 3, and
b represents an integer of 0 to (3-a).

4 . The pattern forming method according to claim 1 , wherein the exposure is carried out using electron beams or extreme ultraviolet rays.

5 . An electronic device manufacturing method, comprising:
the pattern forming method according to claim 1 .

Assignees

• Fujifilm Corp

Inventors

• Tsubaki Hideaki
• Tsuchihashi Toru
• Nihashi Wataru

Classifications

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• C08F212/22

  Oxygen · CPC title

• C08F212/32

  containing two or more rings · CPC title

• C08F212/24 Primary

  Phenols or alcohols · CPC title

• C08F12/22

  Oxygen · CPC title