Surface emitting laser, information obtaining apparatus, and imaging apparatus

Patent metadata

Field	Value
Publication number	US-2018123319-A1
Application number	US-201615567939-A
Country	US
Kind code	A1
Filing date	Apr 21, 2016
Priority date	Apr 30, 2015
Publication date	May 3, 2018
Grant date	—

Abstract

The present invention provides a surface emitting laser the wavelength-tunable band of which is wide. The wavelength-tunable surface emitting laser includes a first reflector ( 101 ), an active layer ( 103 ) disposed on the first reflector ( 101 ), a beam portion ( 110 ) disposed over the active layer ( 103 ) with an air gap therebetween, and a second reflector ( 120 ) disposed on the beam portion ( 110 ). The second reflector ( 120 ) has a distributed Bragg reflector consisting of a stack of dielectric layers. The beam portion ( 110 ) has a distributed Bragg reflector consisting of a stack of conductive semiconductor layers.

First claim

1 . A wavelength-tunable surface emitting laser comprising:
a first reflector; an active layer disposed on the first reflector; a beam portion disposed over the active layer with an air gap therebetween; and a second reflector disposed on the beam portion, wherein the second reflector has a distributed Bragg reflector consisting of a stack of dielectric layers, and wherein the beam portion has a distributed Bragg reflector consisting of a stack of conductive semiconductor layers.

2 . The surface emitting laser according to claim 1 , wherein the optical thickness of the beam portion is greater than or equal to the center wavelength of a wavelength band having a reflectance of 99.5% or more in the reflectance spectrum of the second reflector.

3 . The surface emitting laser according to claim 1 , wherein the distributed Bragg reflector of the second reflector has a configuration in which first layers and second layers having a refractive index lower than that of the first layers are alternately stacked.

4 . The surface emitting laser according to claim 3 , wherein when the center wavelength of a wavelength band having a reflectance of 99.5% or more in the reflectance spectrum of the second reflector is denoted by λ, and the optical thicknesses of the first layers and the second layers of the distributed Bragg reflector of the second reflector are respectively denoted by t1 and t2, the following expressions are satisfied:
(λ/4)×(2n+3/4) less than or equal to t1 less than or equal to (λ/4)×(2n+5/4), and

(λ/4)×(2m+3/4) less than or equal to t2 less than or equal to (λ/4)×(2m+5/4),

where n and m are each an integer greater than or equal to zero.

5 . The surface emitting laser according to claim 1 , wherein the distributed Bragg reflector of the beam portion has a configuration in which third layers and fourth layers having a refractive index lower than that of the third layers are alternately stacked.

6 . The surface emitting laser according to claim 5 , wherein the semiconductor layer closest to the active layer in the distributed Bragg reflector of the beam portion is the fourth layer.

7 . The surface emitting laser according to claim 5 , wherein when the center wavelength of a wavelength band having a reflectance of 99.5% or more in the reflectance spectrum of the second reflector is denoted by λ, and the optical thicknesses of the third layers and the fourth layers of the distributed Bragg reflector of the beam portion are respectively denoted by t3 and t4, the following expressions are satisfied:
(λ/4)×(2k+3/4) less than or equal to t3 less than or equal to (λ/4)×(2k+5/4), and

(λ/4)×(2l+3/4) less than or equal to t4 less than or equal to (λ/4)×(2l+5/4),

where k and l are each an integer greater than or equal to zero.

8 . A wavelength-tunable surface emitting laser comprising:
a first reflector; an active layer disposed on the first reflector; a beam portion disposed over the active layer with an air gap therebetween; and a second reflector disposed on the beam portion, wherein the second reflector has a distributed Bragg reflector consisting of a stack of dielectric layers, wherein the beam portion has a plurality of reflecting surfaces therein, and wherein the beam portion is configured to causes a part of light emitted from the active layer to be reflected by a reflecting surface at the interface between the beam portion and the air gap, a reflecting surface at the interface between the beam portion and the second reflector, and the plurality of reflecting surfaces in the beam portion, and to cause light rays reflected by the reflecting surfaces of the beam portion to interfere with each other so as to weaken the interference effect due to the reflecting surface at the interface between the beam portion and the air gap and the reflecting surface at the interface between the beam portion and the second reflector.

9 . A wavelength-tunable surface emitting laser comprising:
a first reflector; an active layer disposed on the first reflector; a beam portion disposed over the active layer with an air gap therebetween; and a second reflector disposed on the beam portion, wherein the second reflector has a distributed Bragg reflector consisting of a stack of dielectric layers, and wherein the beam portion is formed of a multilayer film such that a wavelength band having a reflectance of 99.5% or more in the reflectance spectrum of the second reflector is wider than that in the case where the beam portion is formed of a single layer.

10 . The surface emitting laser according to claim 8 , wherein the optical thickness of the beam portion is greater than or equal to the center wavelength of a wavelength band having a reflectance of 99.5% or more in the reflectance spectrum of the second reflector.

11 . The surface emitting laser according to claim 8 , wherein the distributed Bragg reflector of the second reflector has a configuration in which first layers and second layers having a refractive index lower than that of the first layers are alternately stacked.

12 . The surface emitting laser according to claim 11 , wherein when the center wavelength of a wavelength band having a reflectance of 99.5% or more in the reflectance spectrum of the second reflector is denoted by λ, and the optical thicknesses of the first layers and the second layers of the distributed Bragg reflector of the second reflector are respectively denoted by t1 and t2, the following expressions are satisfied:
(λ/4)×(2n+3/4) less than or equal to t1 less than or equal to (λ/4)×(2n+5/4), and

(λ/4)×(2m+3/4) less than or equal to t2 less than or equal to (λ/4)×(2m+5/4),

where n and m are each an integer greater than or equal to zero.

13 . The surface emitting laser according to claim 8 ,
wherein the beam portion has a distributed Bragg reflector, and wherein the distributed Bragg reflector of the beam portion has a configuration in which third layers and fourth layers having a refractive index lower than that of the third layers are alternately stacked.

14 . The surface emitting laser according to claim 13 , wherein the semiconductor layer closest to the active layer in the distributed Bragg reflector of the beam portion is the fourth layer.

15 . The surface emitting laser according to claim 13 , wherein when the center wavelength of a wavelength band having a reflectance of 99.5% or more in the reflectance spectrum of the second reflector is denoted by λ, and the optical thicknesses of the third layers and the fourth layers of the distributed Bragg reflector of the beam portion are respectively denoted by t3 and t4, the following expressions are satisfied:
(λ/4)×(2k+3/4) less than or equal to t3 less than or equal to (λ/4)×(2k+5/4), and

(λ/4)×(2l+3/4) less than or equal to t4 less than or equal to (λ/4)×(2l+5/4),

where k and l are each an integer greater than or equal to zero.

16 . An information obtaining apparatus comprising:
the surface emitting laser according to claim 1 ; and an information obtaining unit that obtains internal information of a measuring object.

17 . An imaging apparatus comprising:
the surface emitting laser according to claim 1 ; an interference optical system that divides light from the surface emitting laser into irradiation light with which a measuring object is irradiated, and reference light, and generates interfering light between light reflected from the measuring object and the reference light; a light detecting unit that receives the interfering light; and an information

Assignees

• Canon Kk

Inventors

• Nagatomo Yasuhiro

Classifications

• H01S5/18369

  based on dielectric materials · CPC title

• H01S5/187

  using Bragg reflection · CPC title

• H01S5/18361 Primary

  Structure of the reflectors, e.g. hybrid mirrors · CPC title

• G01B9/02015

  characterised by the beam path configuration · CPC title

• H01S5/18377

  comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers · CPC title