Laser device and method of manufacturing the same
US-2024364074-A1 · Oct 31, 2024 · US
US9106048B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9106048-B2 |
| Application number | US-201313764223-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 11, 2013 |
| Priority date | Feb 11, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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An integrated circuit includes an optical source that provides an optical signal to an optical waveguide. In particular, the optical source may be implemented by fusion-bonding a III-V semiconductor to a semiconductor layer in the integrated circuit. In conjunction with surrounding mirrors (at least one of which is other than a distributed Bragg reflector), this structure may provide a cavity with suitable optical gain at a wavelength in the optical signal along a vertical direction that is perpendicular to a plane of the semiconductor layer. For example, the optical source may include a vertical-cavity surface-emitting laser (VCSEL). Moreover, the optical waveguide, defined in the semiconductor layer, may be separated from the optical source by a horizontal gap in the plane of the semiconductor layer. During operation of the optical source, the optical signal may be optically coupled across the gap from the optical source to the optical waveguide.
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What is claimed is: 1. An integrated circuit, comprising: a hybrid laser configured to provide an optical signal having a wavelength, wherein the hybrid laser includes: a semiconductor layer including a region having a top surface and a bottom surface, wherein the semiconductor layer includes silicon; a material having a top surface and a bottom surface, wherein the bottom surface of the material is disposed on the top surface of the region, wherein the material includes a III…
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