Surface-normal optical coupling interface with thermal-optic coefficient compensation

Patent metadata

Field	Value
Publication number	US-2018106964-A1
Application number	US-201615292501-A
Country	US
Kind code	A1
Filing date	Oct 13, 2016
Priority date	Oct 13, 2016
Publication date	Apr 19, 2018
Grant date	—

Abstract

The disclosed embodiments provide a system that implements an optical interface. The system includes a semiconductor chip with a silicon layer, which includes a silicon waveguide, and an interface layer (which can be comprised of SiON) disposed over the silicon layer, wherein the interface layer includes an interface waveguide. The system also includes an optical coupler that couples an optical signal from the silicon waveguide in the silicon layer to the interface waveguide in the interface layer, wherein the interface waveguide channels the optical signal in a direction parallel to a top surface of the semiconductor chip. The system additionally includes a mirror, which is oriented to reflect the optical signal from the interface waveguide in a surface-normal direction so that the optical signal exits the top surface of the semiconductor chip.

First claim

1 . An interface, comprising:
a semiconductor chip with a silicon layer, which includes a silicon waveguide, and an interface layer comprised of an interface material disposed over the silicon layer, wherein the interface layer includes an interface waveguide; an optical coupler that couples an optical signal from the silicon waveguide in the silicon layer to the interface waveguide in the interface layer, wherein the interface waveguide channels the optical signal in a direction parallel to a top surface of the semiconductor chip; and a mirror, which is oriented to reflect the optical signal from the interface waveguide in a surface-normal direction so that the optical signal exits a surface normal coupler on the top surface of the semiconductor chip, wherein the mirror comprises a reflectively coated etched surface of a sacrificial silicon layer, wherein the sacrificial silicon layer is disposed over the silicon layer at a same level as the interface layer.

2 . The interface of claim 1 , further comprising an optical gain chip bonded to the top surface of the semiconductor chip, wherein the optical gain chip is comprised of an optical gain material and includes a reflective semiconductor optical amplifier (RSOA), and wherein the optical gain chip is oriented so that the reflected optical signal that exits the surface normal coupler feeds into the RSOA, whereby the RSOA, the interface waveguide, the mirror, the silicon waveguide and a reflector, which is optically coupled to the silicon waveguide, form a lasing cavity.

3 . The interface of claim 2 ,
wherein the lasing cavity includes a length I Si , through silicon, a length l I through the interface material, and a length I OGM through the optical gain material; wherein the effective refractive index of silicon is n Si , the effective refractive index of the interface material is n I , and the effective refractive index of the optical gain material is n OGM ; wherein the effective thermal optic coefficient (TOC) of silicon is dn Si /dT, the effective TOC of the interface material is dn I /dT, and the effective TOC of the optical gain material is dn OGM /dT; and wherein l I ≈l OGM *(dn OGM /dT−dn Si /dT)/(dn Si /dT−dn I /dT), whereby the effective TOC of a section of the lasing cavity that passes through the optical gain material and the interface material is substantially the same as the TOC of silicon.

4 . The interface of claim 2 , wherein the interface material comprises one of: SiON, SiN and sapphire.

5 . The interface of claim 2 , wherein the optical gain material comprises a semiconductor.

6 . The interface of claim 2 , further comprising a laser output optically coupled to the lasing cavity.

7 . The interface of claim 1 , further comprising a spot-size converter (SSC) integrated into the interface waveguide, which increases the mode-field size of the optical signal before the optical signal exits the semiconductor chip.

8 . (canceled)

9 . The interface of claim 1 , further comprising an anti-reflection coating to reduce back reflection, which is applied to an output facet of the semiconductor chip.

10 . The interface of claim 1 , wherein the semiconductor chip comprises a double silicon on insulator (SOI) platform, comprising:
a substrate; a first silicon dioxide (SiO 2 ) layer disposed over the substrate; the silicon layer disposed over the SiO 2 layer; a second SiO 2 layer disposed over the silicon layer; the interface layer disposed over a portion of the second SiO 2 layer; and a sacrificial silicon layer disposed over a portion of the second SiO 2 layer at a same level as the interface layer, wherein the sacrificial silicon layer is etched and reflectively coated to form the mirror.

11 . The interface of claim 1 , wherein the semiconductor chip is fabricated through the following operations:
depositing a first SiO 2 layer over a substrate; depositing the silicon layer over the first SiO 2 layer; patterning a silicon circuit on the silicon layer; depositing a second SiO 2 layer over the silicon layer; bonding a sacrificial silicon layer over the second SiO 2 layer; etching the sacrificial silicon layer to form a surface of the mirror; depositing a reflective coating on the surface of the mirror; depositing the interface layer over the semiconductor chip to match a thickness of the sacrificial semiconductor layer; and performing a chemical mechanical planarization (CMP) operation on the semiconductor chip after the interface material deposition.

12 . A system, comprising:
at least one processor; at least one memory coupled to the at least one processor; and a laser for communicating optical signals generated by the system, wherein the laser comprises: a semiconductor chip with a silicon layer, which includes a silicon waveguide, and an interface layer comprised of an interface material disposed over the silicon layer, wherein the interface layer includes an interface waveguide; an optical coupler that couples an optical signal from the silicon waveguide in the silicon layer to the interface waveguide in the interface layer, wherein the interface waveguide channels the optical signal in a direction parallel to a top surface of the semiconductor chip; a mirror that is oriented to reflect the optical signal from the interface waveguide in a surface-normal direction so that the optical signal exits a surface-normal coupler on the top surface of the semiconductor chip; an optical gain chip bonded to the top surface of the semiconductor chip, wherein the optical gain chip is comprised of an optical gain material and includes a reflective semiconductor optical amplifier (RSOA), and wherein the optical gain chip is oriented so that the reflected optical signal that exits the surface normal coupler feeds into the RSOA, whereby the RSOA, the interface waveguide, the mirror, the silicon waveguide and a reflector, which is optically coupled to the silicon waveguide, form a lasing cavity; and a laser output optically coupled to the lasing cavity.

13 . The system of claim 12 ,
wherein the lasing cavity includes a length l Si , through silicon, a length l I through the interface material, and a length l OGM through the optical gain material; wherein the effective refractive index of silicon is n Si , the effective refractive index of the interface material is n I , and the effective refractive index of the optical gain material is n OGM ; wherein the effective thermal optic coefficient (TOC) of silicon is dn Si /dT, the effective TOC of the interface material is dn I /dT, and the effective TOC of the optical gain material is dn OGM /dT; and wherein l I ≈l OGM *(dn OGM /dT−dn Si /dT)/(dn Si /dT−dn I /dT), whereby the effective TOC of a section of the lasing cavity that passes through the optical gain material and the interface material is substantially the same as the TOC of silicon.

14 . The system of claim 12 , wherein the interface material comprises one of: SiON, SiN and sapphire.

15 . The system of claim 12 , wherein the optical gain material comprises a semiconductor.

16 . The system of claim 12 , further comprising a spot-size converter (SSC) integrated into the interface waveguide, which increases the mode-field size of the optical signal before the optical signal exits the semiconductor chip.

17 . The system of claim 12 , wherein the mirror comprises a reflectively coated etched surface of a sacrificial silicon layer, wherein the sacrificial silicon layer is disposed over the silicon layer at a same level as the interface layer.

Assignees

• Oracle Int Corp

Inventors

• Luo Ying
• Zheng Xuezhe
• Krishnamoorthy Ashok V

Classifications

• G02B6/12002

  Three-dimensional structures · CPC title

• G02B6/132

  by deposition of thin films · CPC title

• H01S5/026

  Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06) · CPC title

• G02B6/136

  by etching · CPC title

• H01S5/3013

  AIIIBV compounds · CPC title