Light Emitting Diode and Fabrication Method Thereof

Patent metadata

Field	Value
Publication number	US-2018102461-A1
Application number	US-201715817216-A
Country	US
Kind code	A1
Filing date	Nov 19, 2017
Priority date	Jan 6, 2016
Publication date	Apr 12, 2018
Grant date	—

Abstract

A light-emitting diode includes from bottom to up: a substrate; a light-emitting epitaxial layer laminated by semiconductor material layers over the substrate; a current spreading layer doped with conductive metal nanomaterial groups over the light-emitting epitaxial layer; and metal nanomaterial groups with high visible light transmittance over the current spreading layer. The conductive metal nanomaterial groups dispersed inside the ITO current spreading layer can reduce horizontal resistance of the current spreading layer and improve horizontal spreading uniformity of current; and metal nanomaterial groups with high visible light transmittance are distributed over the upper surface of the current expansion layer for roughening and increasing light extract efficiency.

First claim

1 . A light-emitting diode, comprising, from bottom to up:
a substrate; a light-emitting epitaxial layer including semiconductor material layers over the substrate; a current spreading layer doped with conductive metal nanomaterial groups over the light-emitting epitaxial layer; and transparent metal nanomaterial groups for visible light over the current spreading layer.

2 . The light-emitting diode of claim 1 , wherein, the conductive metal nanomaterial groups comprise at least one of Ag oxides, Zn oxides, Sn oxides, or Ti oxides; and the transparent metal nanomaterial groups comprise at least one of Al oxides, Mg oxides, or Ga.

3 . The light-emitting diode of claim 1 , wherein, the current spreading layer comprises at least one of ITO, ZnO, CTO, InO, In-doped ZnO, Al-doped ZnO, or Ga-doped ZnO.

4 . The light-emitting diode of claim 1 , wherein:
the current spreading layer comprises an ITO current spreading layer; the conductive metal nanomaterial groups comprise conductive Ag nanomaterial groups; and the transparent metal nanomaterial groups comprise Al nanomaterial groups.

5 . The light-emitting diode of claim 4 , wherein the Ag nanomaterial groups comprise at least one of Ag 2 O or AgInO 2 dispersed inside the ITO current spreading layer to reduce horizontal resistance of the current spreading layer and to improve horizontal spreading uniformity of current.

6 . The light-emitting diode of claim 4 , wherein the Al nanomaterial groups comprise spaced Al 2 O 3 particles are distributed on the upper surface of the ITO current spreading layer for roughening and increasing light extraction efficiency.

7 . A fabrication method of a light-emitting diode, the method comprising:
(1) providing a substrate; growing a light-emitting epitaxial layer including semiconductor material layers via epitaxial growth; (2) forming a current spreading layer doped with conductive metals over the light-emitting epitaxial layer; (3) forming metal layers over the current spreading layer; (4) performing a one-time annealing thermal treatment.

8 . The fabrication method of claim 7 , wherein the conductive metals comprise at least one of Ag, Zn, Sn, or Ti; and the metal layers comprise at least one of Al, Mg, or Ca.

9 . The fabrication method of claim 7 , wherein the current spreading layer comprises at least one of ITO, ZnO, CTO, InO, In-doped ZnO, Al-doped ZnO, or Ga-doped ZnO.

10 . The fabrication method of claim 7 , wherein:
the current spreading layer comprises an ITO current spreading layer; the conductive metals comprise conductive Ag metals; and the metal layers comprise an Al metal layer.

11 . The fabrication method of claim 10 , wherein, the ITO current spreading layer doped with conductive Ag metal is formed by simultaneous magnetron sputtering, and the Al metal layer is formed by electron beam evaporation.

12 . The fabrication method of claim 10 , wherein, after the annealing thermal treatment, the Ag metal is oxidized into conductive Ag nanomaterial groups dispersed inside the ITO current spreading layer.

13 . The fabrication method of claim 10 , wherein, after the annealing thermal treatment, the Al metal layer is oxidized into Al nanomaterial groups with discontinuous distribution.

14 . The fabrication method of claim 10 , wherein the one-time annealing thermal treatment is under high temperature with continuous oxygen input during the annealing thermal treatment to fully oxide the doped Al and Ag metals simultaneously.

15 . The fabrication method of claim 10 , wherein, the one-time annealing thermal treatment comprises fast aerobic annealing for 200-300 s under 550-600° C., and a 15-30 sccm oxygen intake.

16 . A light-emitting system comprising a plurality of light-emitting diodes, each light-emitting diode further includes, from bottom to up:
a substrate; a light-emitting epitaxial layer including semiconductor material layers over the substrate; a current spreading layer doped with conductive metal nanomaterial groups over the light-emitting epitaxial layer; and transparent metal nanomaterial groups for visible light over the current spreading layer.

17 . The light-emitting system of claim 16 , wherein the conductive metal nanomaterial groups comprise at least one of Ag oxides, Zn oxides, Sn oxides, or Ti oxides; and the transparent metal nanomaterial groups comprise at least one of Al oxides, Mg oxides, or Ga oxides.

18 . The light-emitting system of claim 16 , wherein, the current spreading layer is ITO, ZnO, CTO, InO, In-doped ZnO, Al-doped ZnO, or Ga-doped ZnO.

19 . The light-emitting system of claim 16 , wherein:
the current spreading layer comprises an ITO current spreading layer; the conductive metals comprise conductive Ag metals; and the metal layers comprise an Al metal layer.

20 . The light-emitting system of claim 19 , wherein, the Ag nanomaterial groups comprise Ag 2 O or AgInO 2 or their combinations, which are dispersed inside the ITO current spreading layer to reduce horizontal resistance of the current spreading layer and to improve horizontal spreading uniformity of current; the Al nanomaterial groups comprise spaced Al 2 O 3 particles, which are distributed on the upper surface of the ITO current spreading layer for roughening and increasing light extraction efficiency

Assignees

• Xiamen Sanan Optoelectronics Technology Co Ltd

Inventors

• Wang Huining
• Hsu Sheng-Hsien
• Peng Kang-Wei
• Lin Su-Hui
• Hsu Chen-Ke

Classifications

• H10W90/00

  Package configurations · CPC title

• H01L2933/0016

  Electricity · mapped topic

• H01L25/0753

  Electricity · mapped topic

• H01L33/42 Primary

  Electricity · mapped topic

• H01L33/32

  Electricity · mapped topic