Light-emitting diode and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-9337384-B2
Application number	US-201514643394-A
Country	US
Kind code	B2
Filing date	Mar 10, 2015
Priority date	Nov 8, 2012
Publication date	May 10, 2016
Grant date	May 10, 2016

Abstract

A light-emitting diode includes a substrate; a light-emitting epitaxial layer, laminated by semiconductor material layers and formed over the substrate; a first current spreading layer over the light-emitting epitaxial layer; an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer, including three structure layers; a second metal barrier layer over the adhesive layer with alternating second current spreading layers and metal barrier layers; and a metal electrode layer over the second metal barrier layer.

First claim

The invention claimed is:

1. A light-emitting diode comprising:
a substrate;
a light-emitting epitaxial layer formed over the substrate;
a first current spreading layer over the light-emitting epitaxial layer;
an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer;
wherein the adhesive layer includes:
a first layer including a second current spreading layers;
a second layer including alternating the second current spreading layers and a first metal barrier layers; and
a third layer including the first metal barrier layers;

a second metal barrier layer over the adhesive layer; and
a metal electrode layer over the second metal barrier layer.

2. The light-emitting diode of claim 1 , wherein the first current spreading layer has a thickness of about 500-5000 Å.

3. The light-emitting diode of claim 1 , wherein the first layer has a thickness of about 100-800 Å.

4. The light-emitting diode of claim 1 , wherein the second layer has a thickness of about 50-200 Å.

5. The light-emitting diode of claim 1 , wherein the third layer has a thickness of about 100-500 Å.

6. The light-emitting diode of claim 1 , wherein the adhesive layer comprises about 6-50 alternating layers.

7. The light-emitting diode of claim 1 , wherein the second current spreading layer is composed of a same material as the first current spreading layer.

8. A light-emitting system comprising a plurality of light-emitting diode, each light-emitting diode including:
a substrate;
a light-emitting epitaxial layer formed over the substrate;
a first current spreading layer over the light-emitting epitaxial layer;
an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer;
wherein the adhesive layer includes:
a first layer including a second current spreading layers;
a second layer including alternating the second current spreading layers and a first metal barrier layers; and
a third layer including the first metal barrier layers;

a second metal barrier layer over the adhesive layer; and
a metal electrode layer over the second metal barrier layer.

9. The system of claim 8 , wherein the first current spreading layer has a thickness of about 500-5000 Å.

10. The system of claim 8 , wherein the first layer has a thickness of about 100-800 Å.

11. The system of claim 8 , wherein the second layer has a thickness of about 50-200 Å.

12. The system of claim 8 , wherein the third layer has a thickness of about 100-500 Å.

13. The system of claim 8 , wherein the adhesive layer comprises about 6-50 alternating layers.

14. The system of claim 8 , wherein the second current spreading layer is composed of a same material as the first current spreading layer.

Assignees

• Xiamen Sanan Optoelectronics Technology Co Ltd

Inventors

• Yin Lingfeng
• Lin Suhui
• Zheng Jiansen
• Liu Chuangui
• Ou Yide
• Wang Qing

Classifications

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/036

  of packages · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/832 Primary

  characterised by their material · CPC title

• H10H20/813

  having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies · CPC title