Micro light emitting diode and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-2018090639-A1
Application number	US-201715680227-A
Country	US
Kind code	A1
Filing date	Aug 18, 2017
Priority date	Aug 18, 2016
Publication date	Mar 29, 2018
Grant date	—

Abstract

A μLED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the μLED is also provided.

First claim

What is claimed is:

1 . A micro light emitting diode, comprising:
an epitaxial stacked layer, comprising a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer, the light emitting layer being located between the first type doped semiconductor layer and the second type doped semiconductor layer, and the first type doped semiconductor layer and the second type doped semiconductor layer being opposite in electrical property, wherein the epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively, and the first mesa portion and the second mesa portion are connected through the second type doped semiconductor layer; a first electrode, electrically connected to the epitaxial stacked layer, and disposed on the first mesa portion; and a second electrode, electrically connected to the epitaxial stacked layer, and disposed on the second mesa portion, wherein the second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion.

2 . The micro light emitting diode as claimed in claim 1 , wherein the epitaxial stacked layer has a first recess portion and a second recess portion, the first recess portion defines the first mesa portion and the second mesa portion and exposes a part of the second type doped semiconductor layer, and the second mesa portion has the second recess portion, the second recess portion defines a first sub mesa portion and a second sub mesa portion in the second mesa portion, and the second recess portion exposes the second type doped semiconductor layer, a part of the first type doped semiconductor layer and a part of the light emitting layer in the second mesa portion.

3 . The micro light emitting diode as claimed in claim 1 , wherein the first electrode has a first surface exposed to external, the second electrode has a second surface exposed to external, and at least a part of the first surface and at least a part of the second surface are in a same horizontal plane.

4 . The micro light emitting diode as claimed in claim 1 , wherein
a part of the first type doped semiconductor layer, a part of the light emitting layer and a part of the second type doped semiconductor layer in the first mesa portion constitute a first diode, a part of the first type doped semiconductor layer, a part of the light emitting layer and a part of the second type doped semiconductor layer in the first sub mesa portion constitute a second diode, a part of the first type doped semiconductor layer, a part of the light emitting layer and a part of the second type doped semiconductor layer in the second sub mesa portion constitute a third diode, wherein a positive terminal of the first diode is coupled to the first electrode, and a negative terminal of the first diode is coupled to a negative terminal of the second diode and a negative terminal of the second diode.

5 . The micro light emitting diode as claimed in claim 1 , further comprising a current spreading layer, wherein the first electrode or the second electrode is electrically connected to the epitaxial stacked layer through the current spreading layer.

6 . The micro light emitting diode as claimed in claim 1 , wherein the first type doped semiconductor layer is one of a P-type doped semiconductor layer and an N-type doped semiconductor layer, and the second type doped semiconductor layer is the other one of the P-type doped semiconductor layer and the N-type doped semiconductor layer.

7 . The micro light emitting diode as claimed in claim 1 , further comprising a substrate, wherein the epitaxial stacked layer, the first electrode and the second electrode are disposed at a same side of the substrate.

8 . The micro light emitting diode as claimed in claim 7 , further comprising an insulation layer disposed on a side surface of the epitaxial stacked layer and a part of a top surface of the epitaxial stacked layer to expose the first mesa portion and the second mesa portion.

9 . The micro light emitting diode as claimed in claim 8 , wherein the second electrode covers a part of the insulation layer.

10 . The micro light emitting diode as claimed in claim 8 , wherein the insulation layer is extended to a surface of the substrate from the side surface of the epitaxial stacked layer.

11 . The micro light emitting diode as claimed in claim 8 , wherein the epitaxial stacked layer further includes an unintentionally doped semiconductor layer, and the unintentionally doped semiconductor layer is located between the second type doped semiconductor layer and the substrate.

12 . The micro light emitting diode as claimed in claim 8 , wherein the insulation layer and the first electrode have a first gap there between, and the insulation layer and the second electrode have a second gap there between.

13 . The micro light emitting diode as claimed in claim 7 , wherein the substrate is a patterned substrate.

14 . The micro light emitting diode as claimed in claim 1 , wherein the first electrode directly contacts the first type doped semiconductor layer on the first mesa portion.

15 . The micro light emitting diode as claimed in claim 1 , wherein a diagonal length of the micro light emitting diode ranges between 10 μm and 100 μm.

16 . A manufacturing method of a micro light emitting diode, comprising:
providing a substrate; forming an epitaxial stacked layer on the substrate, wherein the epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer, the light emitting layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer, and the first type doped semiconductor layer and the second type doped semiconductor layer are opposite in electrical property; etching the epitaxial stacked layer to make the epitaxial stacked layer have a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively; and respectively forming a first electrode on the first mesa portion in the first type conductive region and forming a second electrode on the second mesa portion in the second type conductive region, wherein the first electrode and the second electrode are electrically connected to the epitaxial stacked layer, wherein the second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer of the second mesa portion.

17 . The manufacturing method of the micro light emitting diode as claimed in claim 16 , wherein the step of etching the epitaxial stacked layer comprises:
etching a part of the first type doped semiconductor layer, a part of the light emitting layer and a part of the second type doped semiconductor layer to make the epitaxial stacked layer have a first recess portion and a second recess portion, wherein the first recess portion defines the first mesa portion and the second mesa portion to form the first type conductive region and the second type conductive region respectively, and the second recess portion defines a first sub mesa portion and a second sub mesa portion in the second mesa portion.

18 . The manufacturing method of the micro light emitting diode as claimed in claim 16 , wherein the step of etching the epitaxial stacked layer to make the epitaxial stacke

Assignees

• Genesis Photonics Inc

Inventors

• Ting Shao-Ying
• Lan yan-ting
• Huang Jing-En
• Huang Yi-Ru

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H01L25/0753

  Electricity · mapped topic

• H01L33/06

  Electricity · mapped topic

• H01L33/44

  Electricity · mapped topic

• H01L33/007

  Electricity · mapped topic