Electroplating apparatus, electroplating method, and manufacturing method of semiconductor device

Patent metadata

Field	Value
Publication number	US-2018073160-A1
Application number	US-201715699247-A
Country	US
Kind code	A1
Filing date	Sep 8, 2017
Priority date	Sep 9, 2016
Publication date	Mar 15, 2018
Grant date	—

Abstract

According to one embodiment, an electroplating method includes, arranging an anode having passages through which a plating solution flows and a cathode to face each other via a resist mask, in a reaction section storing the plating solution, and setting a potential of the cathode to a negative potential to the anode, to form a metal plated film on the surface of the cathode.

First claim

1 . An electroplating method comprising:
arranging an anode having passages through which a plating solution flows and a cathode to face each other via a resist mask, in a reaction section storing the plating solution; and setting a potential of the cathode to a negative potential to the anode, to form a metal plated film on the surface of the cathode.

2 . An electroplating method comprising:
arranging an anode and a cathode to face each other, via a mask member comprising a resist mask and a support layer having passages through which a plating solution flows, in a reaction section storing the plating solution; and setting a potential of the cathode to a negative potential to the anode, to form a metal plated film on the surface of the cathode.

3 . The electroplating method according to claim 1 ,
wherein the anode is constituted in the foam of a porous plate having through holes making up the passages, and a distance between the resist mask and the cathode during the formation of the plated film is 1 pm or less.

4 . The electroplating method according to claim 2 ,
wherein the anode is made of a metal material, the support layer is constituted in the form of a porous plate having through holes making up the passages, the resist mask has a pattern corresponding to a pattern shape of the plated film to be formed, and a distance between the resist mask and the cathode during the formation of the plated film is 1 μm or less.

5 . The electroplating method according to claim 1 ,
wherein the passages have through holes arranged at a pitch smaller than a minimum opening width of a pattern of the resist mask.

6 . The electroplating method according to claim 1 ,
wherein a difference between a thickness of the resist mask and a thickness of the plated film to be finally formed is larger than 4 μm, a pitch of the through holes is smaller than 4 μm, and a diameter of each through hole is larger than 1 μm.

7 . The electroplating method according to claim 1 ,
wherein the plating solution contains metal ions to be plated, an electrolyte and a surfactant.

8 . The electroplating method according to claim 1 ,
wherein the anode is an anode plate having a metal layer, the cathode is a cathode plate having a wafer and a seed layer formed on the surface of the wafer, and the resist mask is disposed on the surface of the anode plate on a cathode plate side.

9 . The electroplating method according to claim 1 , further comprising:
pressurizing the reaction section at an atmospheric pressure or more.

10 . The electroplating method according to claim 1 , further comprising:
putting a supercritical fluid in the reaction section.

11 . The electroplating method according to claim 1 ,
wherein a distance between the resist mask and the cathode is adjusted in accordance with at least one of time of the film formation, a current capacity to be applied to the anode or the cathode, and a thickness of the plated film to be formed.

12 . The electroplating method according to claim 1 ,
wherein the anode and the resist mask have a pattern shape corresponding to a part of the cathode, and are arranged to face the cathode, and the following steps are repeated plural times: a step of setting the potential of the cathode to the negative potential to the anode in the state where the anode and the resist mask face the cathode, to form the metal plated film in a pattern state corresponding to a pattern of the resist mask on the surface of the cathode, and a step of relatively moving the anode and the resist mask to the cathode.

13 . An electroplating apparatus comprising:
a reaction tank constituted to store a plating solution; an anode disposed in the reaction tank and having passages through which the plating solution passes; a cathode disposed to face the anode; a resist mask interposed between the anode and the cathode; and a power source coupled to the anode and the cathode.

14 . An electroplating apparatus comprising:
a reaction tank constituted to store a plating solution; an anode and a cathode provided in the reaction tank and arranged to face each other via a mask member comprising a resist mask and a support layer having passages through which the plating solution flows; and a power source coupled to the anode and the cathode.

15 . The electroplating apparatus according to claim 13 , further comprising:
an adjusting device constituted to adjust a distance between the cathode and the resist mask; a plating solution supply section that supplies, to the reaction tank, the plating solution containing at least metal ions to be plated, an electrolyte and a surfactant, and a control section that controls operations of the power source, the adjusting device and the plating solution supply section, and sets a potential of the cathode to a negative potential to the anode in a state where the anode and the cathode are arranged to face each other via the resist mask in the reaction tank in which the plating solution is stored, to form a metal plated film in a pattern state on the surface of the cathode.

16 . The electroplating apparatus according to claim 13 , further comprising:
a supercritical fluid supply section that supplies a supercritical fluid to the reaction tank; and a control section that controls an operation of the supercritical fluid supply section.

17 . The electroplating apparatus according to claim 13 ,
wherein the anode includes an anode plate formed on the surface of a metal layer, the cathode includes a cathode plate having a wafer and a seed layer formed on the surface of the wafer, the metal layer of the anode plate is coupled to a cathode of the power source, and the seed layer of the cathode plate is coupled to an anode of the power source.

18 . The electroplating apparatus according to claim 13 , further comprising:
a pressurizing device that pressurizes the inside of the reaction tank to an atmospheric pressure or more.

19 . A manufacturing method of a semiconductor device comprising:
arranging an anode having passages through which a plating solution flows and a cathode to face each other via a resist mask, in a reaction section storing the plating solution; and setting a potential of the cathode to a negative potential to the anode, to form a metal plated film on the surface of the cathode.

Assignees

• Toshiba Kk

Inventors

• Higuchi Kazuhito

Classifications

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• C25D5/022

  using masking means · CPC title

• C25D21/14

  Controlled addition of electrolyte components · CPC title

• C25D7/123

  Semiconductors first coated with a seed layer or a conductive layer · CPC title

• C25D5/04

  Electroplating with moving electrodes · CPC title