Power module

US2018048141A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2018048141-A1
Application numberUS-201615543173-A
CountryUS
Kind codeA1
Filing dateApr 6, 2016
Priority dateApr 6, 2016
Publication dateFeb 15, 2018
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

When a short-circuit failure has occurred in a power semiconductor device provided in a power module, a radical and rapid temperature increase is prevented by instantly interrupting a short-circuit current. A power module 10 has a package 10 a. Provided in the package 10 a are: a MOSFET 21 serving as the power semiconductor device; a resistor 23 serving as a detecting means for detecting an operation state of the MOSFET 21 and outputting a detection signal; and a MOSFET 22 serving as a current-interrupting purpose switch connected in series to the MOSFET 21. In response to a control signal Si 2 generated on the basis of the detection signal, the MOSFET 22 goes into a conduction state during a normal operation of the MOSFET 21 and goes into an interruption state so as to interrupt a current flowing in the MOSFET 21 when a short-circuit failure has occurred in the MOSFET 21.

First claim

Opening claim text (preview).

1 . A power module wherein a package houses therein: a power semiconductor device used for a switching purpose to conduct/interrupt a current; a detecting means for detecting an operation state of the power semiconductor device and outputting a detection signal; and a switch for a current-interrupting purpose that is connected in series to the power semiconductor device and is configured to, in response to a control signal generated on a basis of the detection signal, go into a conduction state so as to conduct a current flowing in the power semiconductor device during a normal operation of the power semiconductor device and to go into an interruption state so as to interrupt the current flowing in the power semiconductor device when a short-circuit failure has occurred in the power semiconductor device. 2 . The power module according to claim 1 , wherein the detecting means is a current detecting means for detecting the current flowing in the power semiconductor device and outputting a current detection signal. 3 . The power module according to claim 2 , wherein the current detecting means has a resistor connected in series to the switch and outputs a voltage between two ends of the resistor as the current detection signal. 4 . The power module according to claim 2 , wherein the current detecting means has a resistor connected in series to the switch and outputs a voltage between two ends of a circuit including the switch and the resistor, as the current detection signal. 5 . The power module according to claim 2 , wherein the current detecting means has a resistor connected in series to a current detection terminal installed with the switch and outputs a voltage between two ends of the resistor as the current detection signal. 6 . The power module according to claim 1 , wherein the detecting means is a temperature detecting means for detecting a temperature exhibited during an operation of the power semiconductor device and outputting a temperature detection signal. 7 . The power module according to claim 6 , wherein the temperature detecting means is a temperature sensing device including a thermistor of which an electrical characteristic changes in accordance with a temperature in a vicinity of the power semiconductor device. 8 . The power module according to claim 1 , comprising a control circuit provided either inside or outside of the package, wherein when the detection signal exceeds a predetermined value, the control circuit determines that the short-circuit failure has occurred in the power semiconductor device and generates the control signal.

Assignees

Inventors

Classifications

  • in field-effect transistor switches · CPC title

  • Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters · CPC title

  • Means for protecting converters other than automatic disconnection · CPC title

  • for switches · CPC title

  • having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer · CPC title

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What does patent US2018048141A1 cover?
When a short-circuit failure has occurred in a power semiconductor device provided in a power module, a radical and rapid temperature increase is prevented by instantly interrupting a short-circuit current. A power module 10 has a package 10 a. Provided in the package 10 a are: a MOSFET 21 serving as the power semiconductor device; a resistor 23 serving as a detecting means for de…
Who is the assignee on this patent?
Shindengen Electric Mfg
What technology area does this patent fall under?
Primary CPC classification H02H3/085. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Feb 15 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).