Temperature protection device
US-2017294908-A1 · Oct 12, 2017 · US
US2018048141A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018048141-A1 |
| Application number | US-201615543173-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 6, 2016 |
| Priority date | Apr 6, 2016 |
| Publication date | Feb 15, 2018 |
| Grant date | — |
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When a short-circuit failure has occurred in a power semiconductor device provided in a power module, a radical and rapid temperature increase is prevented by instantly interrupting a short-circuit current. A power module 10 has a package 10 a. Provided in the package 10 a are: a MOSFET 21 serving as the power semiconductor device; a resistor 23 serving as a detecting means for detecting an operation state of the MOSFET 21 and outputting a detection signal; and a MOSFET 22 serving as a current-interrupting purpose switch connected in series to the MOSFET 21. In response to a control signal Si 2 generated on the basis of the detection signal, the MOSFET 22 goes into a conduction state during a normal operation of the MOSFET 21 and goes into an interruption state so as to interrupt a current flowing in the MOSFET 21 when a short-circuit failure has occurred in the MOSFET 21.
Opening claim text (preview).
1 . A power module wherein a package houses therein: a power semiconductor device used for a switching purpose to conduct/interrupt a current; a detecting means for detecting an operation state of the power semiconductor device and outputting a detection signal; and a switch for a current-interrupting purpose that is connected in series to the power semiconductor device and is configured to, in response to a control signal generated on a basis of the detection signal, go into a conduction state so as to conduct a current flowing in the power semiconductor device during a normal operation of the power semiconductor device and to go into an interruption state so as to interrupt the current flowing in the power semiconductor device when a short-circuit failure has occurred in the power semiconductor device. 2 . The power module according to claim 1 , wherein the detecting means is a current detecting means for detecting the current flowing in the power semiconductor device and outputting a current detection signal. 3 . The power module according to claim 2 , wherein the current detecting means has a resistor connected in series to the switch and outputs a voltage between two ends of the resistor as the current detection signal. 4 . The power module according to claim 2 , wherein the current detecting means has a resistor connected in series to the switch and outputs a voltage between two ends of a circuit including the switch and the resistor, as the current detection signal. 5 . The power module according to claim 2 , wherein the current detecting means has a resistor connected in series to a current detection terminal installed with the switch and outputs a voltage between two ends of the resistor as the current detection signal. 6 . The power module according to claim 1 , wherein the detecting means is a temperature detecting means for detecting a temperature exhibited during an operation of the power semiconductor device and outputting a temperature detection signal. 7 . The power module according to claim 6 , wherein the temperature detecting means is a temperature sensing device including a thermistor of which an electrical characteristic changes in accordance with a temperature in a vicinity of the power semiconductor device. 8 . The power module according to claim 1 , comprising a control circuit provided either inside or outside of the package, wherein when the detection signal exceeds a predetermined value, the control circuit determines that the short-circuit failure has occurred in the power semiconductor device and generates the control signal.
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