Deposition process monitoring system, and method of controlling deposition process and method of fabricating semiconductor device using the system

Patent metadata

Field	Value
Publication number	US-2018010243-A1
Application number	US-201715407129-A
Country	US
Kind code	A1
Filing date	Jan 16, 2017
Priority date	Jul 6, 2016
Publication date	Jan 11, 2018
Grant date	—

Abstract

Provided are a deposition process monitoring system capable of detecting an internal state of a chamber in a deposition process, and a method of controlling the deposition process and a method of fabricating a semiconductor device using the system. The deposition process monitoring system includes a facility cover configured to define a space for a deposition process, a chamber located in the facility cover, covered with a translucent cover dome, and having a support on which a deposition target is placed, a plurality of lamps disposed in the facility cover, the lamps respectively disposed above and below the chamber, the lamps configured to supply radiant heat energy into the chamber during the deposition process, and a laser sensor disposed outside the chamber, the laser sensor configured to irradiate the cover dome with a laser beam and detect an intensity of the laser beam transmitted through the cover dome, wherein a state of by-products with which the cover dome is coated is determined based on the detected intensity of the laser beam.

First claim

1 - 17 . (canceled)

18 . A method of controlling a deposition process, the method comprising:
disposing a deposition target on a support disposed in a chamber covered by a transparent cover dome; injecting a process gas into the chamber; supplying radiant heat energy into the chamber by lamps disposed outside the chamber; irradiating the chamber with a laser beam and detecting an intensity of the laser beam transmitted through the cover dome; determining a state of by-products coated on the cover dome based on the detected intensity of the laser beam; and adjusting a process condition according to the state of the by-products.

19 . The method of claim 18 , wherein:
the laser sensor includes at least one of a horizontal type laser sensor horizontally irradiating an upper surface of the cover dome with a laser beam and a vertical type laser sensor vertically irradiating the upper surface of the deposition target with the laser beam; the horizontal type laser sensor detects the laser beam reflected by a reflection plate disposed opposite thereto with respect to the chamber; and the vertical type laser sensor detects the laser beam reflected by the deposition target.

20 . The method of claim 18 , wherein the state of the by-products is determined by comparing the intensity of the laser beam transmitted through the cover dome coated with the by-products and an intensity of laser beam transmitted through the cover dome before the by-products are coated.

21 . The method of claim 18 , wherein, in the adjusting of the process condition, a temperature measured by a temperature sensor is corrected based on the intensity of the laser beam.

22 . The method of claim 18 , wherein, in the adjusting of the process condition, a wet cleaning time point or a replacement time point of the cover dome is determined based on the intensity of the laser beam.

23 . A method of fabricating a semiconductor device, the method comprising:
disposing a wafer on a support disposed in a chamber covered by a transparent cover dome; injecting a process gas into the chamber; supplying radiant heat energy into the chamber by lamps disposed outside the chamber and growing a thin film on the wafer; irradiating the chamber with a laser beam and detecting an intensity of the laser beam transmitted through the cover dome; determining a state of by-products coated on the cover dome based on the detected intensity of the laser beam; determining whether the state of the by-products is within an allowable range; and performing a subsequent semiconductor process on the wafer when the state of the by-products is within the allowable range.

24 . The method of claim 23 , wherein, in the growing of the thin film on the wafer, a thin film is epitaxially grown on the wafer.

25 . The method of claim 23 , further comprising:
adjusting a process condition of a deposition process when the state of the by-products is out of the allowable range; and cleaning the cover dome when the state of the by-products is in a first predetermined state; replacing the cover dome with another cover dome when the state of the by-products is in a second predetermined state; individualizing the wafer into separate semiconductor chips; and packaging the semiconductor chips.

26 . A method of manufacturing a semiconductor device, the method comprising:
disposing a substrate on a support of a chamber of an apparatus; providing a gas into the chamber; forming a layer on the substrate with the gas; monitoring by-product formed on a cover of the chamber; and adjusting the apparatus based on the monitored states of the by-product, wherein the chamber is disposed in a first cover, wherein the chamber comprises a transparent cover, wherein monitoring the by-product comprises: irradiating a first laser beam on the transparent cover of the chamber; receiving the first laser beam transmitted through the transparent cover; determining a state of the by-product formed on the transparent cover based on the intensity of the received first laser beam.

27 . The method of claim 26 , wherein the by-product is a layer of material coated on the cover of the chamber.

28 . The method of claim 27 , wherein the state of the by-product is a thickness of the layer or a transmittance rate of the laser through the by-product layer.

29 . The method of claim 26 , wherein the apparatus comprises:
a first light emitter emitting the first laser beam on to the cover of the chamber; and a first light receiver receiving the first laser beam transmitted through the cover of the chamber, wherein the first and second polarizers have different polarization axes from each other.

30 . The method of claim 29 , wherein the apparatus further comprises:
a reflection plate disposed on a first side of the first cover; a first polarizer disposed on the first light emitter; and a second polarizer disposed on the first light receiver, wherein the first light emitter is disposed on a second side of the first cover opposite the first side of the cover, wherein the first laser beam is reflected on the reflection plate before received by the first light receiver.

31 . The method of claim 30 , wherein the apparatus further comprises:
a second light emitter emitting a second laser beam on to the cover of the chamber; a second light receiver receiving the second laser beam transmitted through the cover of the chamber; a third polarizer disposed on the second light emitter; and a fourth polarizer disposed on the second light receiver, wherein the second laser beam is reflected by the substrate before being received by the second light receiver, and wherein the third and fourth polarizers have different polarization axes from each other.

32 . The method of claim 29 , wherein the apparatus further comprises:
a second light emitter emitting a second laser beam onto the cover of the chamber; and a second light receiver receiving the second laser beam transmitted through the cover of the chamber, wherein the second laser beam is reflected by the substrate before being received by the second light receiver.

33 . The method of claim 26 , wherein the adjusting the apparatus includes adjusting a temperature in the chamber by providing heat energy into the chamber.

34 . The method of claim 26 , wherein the adjusting the apparatus includes calibrating a thermometer detecting a temperature of the chamber.

35 . The method of claim 34 , wherein the thermometer is a pyrometer.

36 . The method of claim 26 , wherein the adjusting the apparatus includes removing by-products formed on the transparent cover of the chamber.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Chang-Yun
• Lee Ju-Hyun
• Park Kee-Soo
• Han Kyu-Hee
• Lee Seung-Hun
• Jeon Byung-Chul

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title