Power converter and semiconductor device

Patent metadata

Field	Value
Publication number	US-2018006018-A1
Application number	US-201515545179-A
Country	US
Kind code	A1
Filing date	Aug 28, 2015
Priority date	Aug 28, 2015
Publication date	Jan 4, 2018
Grant date	—

Abstract

A power converter includes a semiconductor element disposed on a substrate, a thermistor element for detecting the temperature of the substrate, the thermistor element being disposed on the substrate, a current detection resistor having one end connected to a ground side node and another end that is grounded, a first voltage detection unit configured to detect a first potential at the other end of the current detection resistor and a second potential at the ground side node, and output a first detection signal, a control unit configured to control the semiconductor element based on the first detection signal, a temperature detection resistor having one end that is connected to a reference potential and another end that is connected to a detection node, and a temperature detection unit configured to detect a temperature based on a third potential at the detection node, and output a temperature information signal.

First claim

1 . A power converter comprising:
a semiconductor element disposed on a substrate, the semiconductor element including an output connected to an output node of the substrate, a first input connected to a first control node of the substrate, a second input connected to a second control node of the substrate, a first drive current node connected to a power supply side node of the substrate, and a second drive current node connected to a ground side node of the substrate; a thermistor element disposed on the substrate for detecting a temperature of the substrate, the thermistor element having one end that is connected to the ground side node, and another end that is connected to a detection node of the substrate; a current detection resistor having one end that is connected to the ground side node and another end that is grounded; a first voltage detection unit configured to detect a first potential at the other end of the current detection resistor and a second potential at the ground side node, and output a first detection signal in accordance with a first potential difference between the first potential and the second potential; a control unit configured to output, based on the first detection signal, a first control signal to the first input via the first control node and a second control signal to the second input via the second control node to control the semiconductor element; a temperature detection resistor having one end that is connected to a reference potential, and another end that is connected to the detection node; and a temperature detection unit configured to detect a temperature based on a third potential at the detection node, and output a temperature information signal including information on the temperature detected, wherein the semiconductor element includes: a first transistor having one end that is the first drive current node, another end connected to the output, and a gate that is the first input; and a second transistor having one end that is connected to the output, another end that is the second drive current node, and a gate that is the second input, and wherein based on the first detection signal, the control unit outputs the first control signal to the gate of the first transistor via the first control node to control the first transistor, and the second control signal to the gate of the second transistor via the second control node to control the second transistor, wherein a resistance value of the temperature detection resistor is greater than a resistance value of the current detection resistor, and a resistance value of the thermistor element at a normal temperature is greater than the resistance value of the temperature detection resistor.

2 . (canceled)

3 . The power converter according to claim 1 , wherein the temperature detection unit receives the third potential at the detection node and the first detection signal, and obtains a resistance value of the thermistor element based on the third potential and the first potential difference to detect a temperature corresponding to the resistance value of the thermistor element.

4 . The power converter according to claim 3 , wherein the temperature detection unit obtains:
a second potential difference by subtracting the first potential difference from a potential difference between the third potential and a ground potential; a current value of a current flowing through the thermistor element by dividing a potential difference between the reference potential and the third potential by a resistance value of the temperature detection resistor; and the resistance value of the thermistor element by dividing the second potential difference by the current value.

5 . The power converter according to claim 1 , further comprising a second voltage detection unit configured to detect the second potential at the ground side node and the third potential at the detection node, wherein
the temperature detection unit: receives a signal including information on the second potential and the third potential from the second voltage detection unit; obtains a resistance value of the thermistor element based on the third potential and the second potential; and detects a temperature corresponding to the resistance value of the thermistor element.

6 . The power converter according to claim 5 , wherein the temperature detection unit obtains:
a second potential difference between the third potential and the second potential; a current value of a current flowing through the thermistor element by dividing a potential difference between the reference potential and the third potential by a resistance value of the temperature detection resistor; and a resistance value of the thermistor element by dividing the second potential difference by the current value of the current flowing through the thermistor element.

7 . The power converter according to claim 1 , further comprising a second voltage detection unit configured to detect the first potential at the other end of the current detection resistor and the third potential at the detection node, wherein
the temperature detection unit: receives a signal including information on the first potential and the third potential from the second voltage detection unit; and obtains a resistance value of the thermistor element based on the first potential and the third potential, and detects a temperature corresponding to the resistance value of the thermistor element.

8 . The power converter according to claim 7 , wherein the temperature detection unit obtains:
a potential difference between the third potential and the first potential; a current value of a current flowing through the thermistor element by dividing a potential difference between the reference potential and the third potential by a resistance value of the temperature detection resistor; and a resistance value of the thermistor element by dividing the potential difference between the third potential and the first potential by the current value.

9 . The power converter according to claim 1 , further comprising a second voltage detection unit configured to detect the first potential at the other end of the current detection resistor and the third potential at the detection node, wherein
the temperature detection unit: receives a signal including information on the first potential and the third potential from the second voltage detection unit and the first detection signal; obtains a resistance value of the thermistor element based on the first potential, the third potential, and the first potential difference; and detects a temperature corresponding to the resistance value of the thermistor element.

10 . The power converter according to claim 9 , wherein the temperature detection unit obtains:
a second potential difference by subtracting the first potential difference from a potential difference between the third potential and the first potential; a current value of a current flowing through the thermistor element by dividing a potential difference between the reference potential and the third potential by a resistance value of the temperature detection resistor; and a resistance value of the thermistor element by dividing the second potential difference by the current value.

11 . (canceled)

12 . The power converter according to claim 1 , wherein the control unit:
obtains a first current flowing through the current detection resistor based on the first detection signal; and based on a value of the first current, outputs the first control signal to the gate of the first transistor via the first control node to control the first transistor, and the second control signal to t

Assignees

• Shindengen Electric Mfg

Inventors

• Kobayashi Yoshinori

Classifications

• H10W90/00

  Package configurations · CPC title

• H03K2017/0806

  against excessive temperature · CPC title

• H02M3/158

  including plural semiconductor devices as final control devices for a single load · CPC title

• H03K19/1732

  by limitation or reduction of the pin/gate ratio (for data-processing equipment G06F1/22) · CPC title

• H03K17/0822

  in field-effect transistor switches · CPC title