Oxidative Volumetric Expansion Of Metals And Metal Containing Compounds

Patent metadata

Field	Value
Publication number	US-2017358483-A1
Application number	US-201715621120-A
Country	US
Kind code	A1
Filing date	Jun 13, 2017
Priority date	Jun 14, 2016
Publication date	Dec 14, 2017
Grant date	—

Abstract

Methods comprising forming a film on at least one feature of a substrate surface are described. The film is expanded to fill the at least one feature and cause growth of the film from the at least one feature. Methods of forming self-aligned vias are also described.

First claim

What is claimed is:

1 . A processing method comprising:
providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall; forming a film on the substrate surface and the first sidewall second sidewall and bottom surface of the at least one feature; and expanding the film to fill the at least one feature.

2 . The method of claim 1 , wherein expanding the film causes the film to expand straight up from the at least on feature.

3 . The method of claim 2 , wherein expanding the film causes a gap to be formed between the substrate surface and the film.

4 . The method of claim 3 , wherein the film comprises one or more of Co, Mo, W, Ta, Ti, Ru, Rh, Cu, Fe, Mn, V, Nb, Hf, Zr, Y, Al, Sn, Cr or La.

5 . The method of claim 4 , wherein expanding the film comprises exposing the film to an oxidizing agent comprising one or more of O 2 , O 3 , N 2 O, H 2 O, H 2 O 2 , CO, CO 2 , NH 3 , N 2 /Ar, N 2 /He or N 2 /Ar/He, a nitridation agent comprising one or more of ammonia, hydrazine, NO 2 or nitrogen plasma, a siliciding agent comprising one or more of trimethylsilane, silane, disilane, and/or a compound comprising germanium.

6 . The method of claim 1 , wherein expanding the film occurs at a temperature greater than or equal to about 300° C.

7 . The method of claim 1 , wherein the deposited film is conformal.

8 . The method of claim 1 , wherein the feature has an aspect ratio greater than or equal to 10:1.

9 . The method of claim 1 , further comprising doping the film with a dopant.

10 . The method of claim 8 , wherein doping the film occurs with the formation of the film.

11 . The method of claim 8 , wherein doping the film is performed sequentially with formation of the film.

12 . The method of claim 1 , further comprising treating the film.

13 . The method of claim 11 , wherein treating the film comprises annealing the film.

14 . The method of claim 1 , wherein forming the film does not form a seam in the at least one feature.

15 . A processing method comprising:
providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall; forming a metal film on the substrate surface and the first sidewall, second sidewall and bottom surface of the at least one feature; and expanding the metal film to fill the at least one feature so that a top portion of the film comprises a metal oxide, metal nitride, metal silicide and/or metal-germanium species and the bottom portion of the film comprises the metal film.

16 . The method of claim 15 , further comprising exposing the substrate to an etchant to remove the metal oxide film leaving the metal film in the bottom portion of the at least one feature.

17 . The method of claim 15 , wherein expanding the metal film occurs at a temperature less than about 400° C.

18 . The method of claim 15 , wherein the substrate comprises silicon nitride, the metal film comprises tungsten and the metal oxide film comprises tungsten oxide.

19 . The method of claim 19 , wherein expanding the film occurs at a temperature less than about 350° C.

20 . A processing method comprising:
providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall, the substrate surface including a film filling the at least one feature and extending above the substrate surface; removing the film above the substrate surface to leave the substrate surface and film in the features exposed; expanding the film in the features to cause straight up growth of the film to form pillars of the film extending from the at least one feature; forming a material layer on the substrate surface; and removing the pillars of the film to leave the at least one feature with the material layer thereon.

Assignees

• Applied Materials Inc

Inventors

• Roy Susmit Singha
• Chen Yihong
• Chan Kelvin
• Mallick Abhijit Basu
• Gandikota Srinivas

Classifications

• H10P14/61

  using masks · CPC title

• H10D64/01344

  in a nitrogen-containing ambient, e.g. N2O oxidation · CPC title

• H10W10/0145

  of trenches having shapes other than rectangular or V-shape (H10W10/0143 takes precedence) · CPC title

• H10W10/014 Primary

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/0143

  comprising concurrently refilling multiple trenches having different shapes or dimensions · CPC title