Leadless Stack Comprising Multiple Components

Patent metadata

Field	Value
Publication number	US-2017358397-A1
Application number	US-201715670247-A
Country	US
Kind code	A1
Filing date	Aug 7, 2017
Priority date	May 26, 2010
Publication date	Dec 14, 2017
Grant date	—

Abstract

An electronic component is described wherein the electronic component comprises a stack of electronic elements comprising a transient liquid phase sintering adhesive between and in electrical contact with each said first external termination of adjacent electronic elements

First claim

1 . An electronic component stack comprising:
at least one multilayered ceramic capacitor comprising: first electrodes and second electrodes in an alternating parallel arrangment with a dielectric between adjacent said first electrodes and said second electrodes wherein said first electrodes have a first polarity and terminate at a first side of said multilayered ceramic capacitor and said second electrodes have a second polarity and terminate at a second side of said multilayered ceramic capacitor; a first transient liquid phase sintering compatible material on said first side and in electrical contact with each said first electrode; a second transient liquid phase sintering compatible material on said second side and in electrical contact with each said second electrode; an electronic element comprising: a first external termination comprising a third transient liquid phase sintering compatible material on said first external termination; and a second external termination comprising a fourth transient liquid phase sintering compatible material on said second external termination; and a metallurgical bond between said first transient liquid phase sintering compatible material and said third transient liquid phase sintering compatible material.

2 . The electronic component stack of claim 1 further comprising a conductive layer between at least one of said first side and said first transient liquid phase sintering conductive layer or between said first external termination and said third transient liquid phase sintering compatible material.

3 . The electronic component stack of claim 2 wherein at least one of said first layer of transient liquid phase sintering compatible material or said third transient liquid phase sintering compatible material comprises at least one low melting point metal selected from indium, tin, antimony, bismuth, cadmium, zinc, gallium, tellurium, mercury, thallium, selenium, or polonium, lead.

4 . The electronic component stack of claim 2 wherein said conductive layer comprises a high temperature metal selected from the group consisting of silver, copper, aluminum, gold, platinum, palladium, beryllium, rhodium, nickel, cobalt, iron and molybdenum

5 . The electronic component stack of claim 2 wherein said conductive layer comprises nickel plated with an element selected from the group consisting of Ag, Sn, Au or SnPb.

6 . The electronic component stack of claim 1 wherein said multilayered ceramic capacitor further comprising an external termination.

7 . The electronic component stack of claim 6 wherein at least one of said external termination or said first external termination comprises nickel plated with an element selected from the group consisting of Ag, Sn, Au or SnPb.

8 . The electronic component stack of claim 1 further comprising a lead frame.

9 . The electronic component stack of claim 8 wherein at least one of said first transient liquid phase sintering compatible material or said third transient liquid phase sintering material comprises a low melting metal where said low melting metal is diffused into said lead frame.

10 . The electronic component stack of claim 9 wherein said low melting metal is also diffused into said first electrodes.

11 . The electronic component stack of claim 8 wherein at least one of said first transient liquid phase sintering compatible material or said third transient liquid phase sintering compatible material further comprises a high melting metal.

12 . A electronic component stack of claim 1 wherein said first transient sintering conductive layer further comprises a non-metallic filler.

13 . The electronic component stack of claim 12 wherein said non-metallic filler is glass frit.

14 . The electronic component stack of claim 1 further comprising a first lead frame in electrical contact with said first transient liquid phase sintering compatible material and said third transient liquid phase sintering compatible material.

15 . The electronic component stack of claim 14 wherein said first lead frame comprises a material selected from the group consisting of phosphor bronze, copper, and ferrous alloys.

16 . The electronic component stack of claim 15 wherein said first lead frame comprises a lead frame surface finish of Cu, Ag, Sn, Au, Ni, or Pb.

17 . The electronic component stack of claim 14 wherein said first lead frame comprises a material selected from the group consisting beryllium copper, Cu194 and Cu192.

18 . The electronic component stack of claim 17 wherein said first lead frame comprises a lead frame surface finish of Cu, Ag, Sn, Au, Ni, or Pb.

19 . The electronic component stack of claim 14 wherein said first lead comprises a material selected from the group consisting of alloys of copper, Alloy 42 and Kovar.

20 . The electronic component stack of claim 19 wherein said first lead frame comprises a lead frame surface finish of Cu, Ag, Sn, Au, Ni, or Pb.

21 . The electronic component stack of claim 1 wherein at least one of said first transient liquid phase sintering compatible material or said third first transient liquid phase sintering compatible material comprises a low melting metal and a high melting metal.

22 . The electronic component stack of claim 21 wherein said low melting metal is diffused into both said high melting metal and said first electrodes.

23 . The electronic component stack of claim 21 wherein said low melting metal is selected from the group consisting of indium, tin, antimony, bismuth, cadmium, zinc, gallium, tellurium, mercury, thallium, selenium, polonium and lead.

24 . The electronic component stack of claim 21 wherein said high melting metal is selected from the group consisting of silver, copper, aluminum, gold, platinum, palladium, beryllium, rhodium, nickel, cobalt, iron and molybdenum.

25 . The electronic component stack of claim 21 wherein said low melting metal is selected from the group consisting of indium, tin or bismuth and said high melting metal is selected from the group consisting of silver, copper or nickel.

26 . The electronic component stack of claim 1 further comprising an insulator between adjacent multilayered ceramic capacitors.

27 . The electronic component stack of claim 1 further comprising a sacrificial chip.

28 . The stacked electronic component of claim 1 wherein said electronic element is selected from the group consisting of resistor, varistor, inductor, diode, fuse, overvoltage discharge device, sensor, switch, electrostatic discharge suppressor, semiconductor and integrated circuit.

29 . The stacked electronic component of claim 28 wherein said electronic element is selected from the group consisting of resistor, varistor, inductor, diode, fuse, overvoltage discharge device, sensor, switch, electrostatic discharge suppressor and integrated circuit.

30 . A stacked electronic component comprising:
a stack comprising at least two electronic elements wherein each electronic element of said electronic elements comprises a first external termination and a second external termination; and a transient liquid phase sintering adhesive between and in electrical contact with each said first external termination of adjacent electronic elements.

31 . The stacked electronic component of claim 27 wherein each

Assignees

• Kemet Electronics Corp

Inventors

• Mcconnell John E
• Renner Garry L
• Bultitude John
• Hill R Allen
• Miller Galen W

Classifications

• H10W72/07336

  Soldering or alloying · CPC title

• B23K35/3613

  Polymers, e.g. resins · CPC title

• H01G4/40 Primary

  Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations · CPC title

• H01G4/232

  electrically connecting two or more layers of a stacked or rolled capacitor · CPC title

• B23K2101/40

  Semiconductor devices · CPC title