P-type transparent conducting nickel oxide alloys

Patent metadata

Field	Value
Publication number	US-2017355615-A1
Application number	US-201715617339-A
Country	US
Kind code	A1
Filing date	Jun 8, 2017
Priority date	Jun 8, 2016
Publication date	Dec 14, 2017
Grant date	—

Abstract

Disclosed herein is the formation of p-type transparent conducting oxides (TCO) having a structure of Mg x Ni 1-x O or Zn x Ni 1-x O. These structures disrupt the two-dimensional confinement of individual holes (the dominant charge carrier transport mechanism in pure NiO) creating three-dimensional hole transport by providing pathways for hole transfer in directions that are unfavorable in pure NiO. Forming these structures preserves NiO's transparency to visible light since the band gaps do not deviate significantly from that of pure NiO. Furthermore, forming Mg x Ni 1-x O or Zn x Ni 1-x O does not lead to hole trapping on O ions adjacent to Zn and Mg ions. The formation of these alloys will lead to creation of three-dimensional hole transport and improve NiO's conductivity for use as p-type TCO, without adversely affecting the favorable properties of pure NiO.

First claim

What is claimed:

1 . A composition of matter with a rock salt structure comprising a substitutional alloy having the formula:
M x Ni 1-x O, where M is Mg or Zn, and 0 <x <1.

2 . The composition of matter according to claim 1 , wherein 0.2≦x≦0.3.

3 . The composition of matter according to claim 1 , wherein x is 0.25.

4 . The composition of matter according to claim 1 , wherein a quasiparticle gap is between 3.3 and 4.4.

5 . The composition of matter according to claim 1 , wherein spin configurations in the presence of a hole include singly occupied O 2p orbitals and filled Mg 2p or Zn 3d orbitals.

6 . A device comprising:
A first layer, the first layer comprising a p-type semiconductor substitutional alloy having a rock salt structure, the p-type semiconductor alloy comprising the formula:
M x Ni 1-x O, where M is Mg or Zn, and 0 <x <1,
wherein a quasiparticle gap of the p-type semiconductor alloy is between 3.3 and 4.4.

7 . The device according to claim 6 , wherein 0.2≦x≦0.3.

8 . The device according to claim 6 , wherein x is 0.25.

9 . The device according to claim 6 , wherein the device further comprises:
an electrolyte; dye molecules; and a layer comprising a transparent n-type semiconductor.

10 . The device according to claim 9 , wherein the transparent n-type semiconductor comprises titanium dioxide.

11 . The device according to claim 6 , wherein the first layer has a thickness between about 500 nanometers and about 100 micrometers.

12 . The device according to claim 6 , wherein the device further comprises:
an electron acceptor layer; an electron donor layer; and a conducting layer.

13 . The device according to claim 12 , wherein the electron acceptor layer, the electron donor layer, or both also act as a light absorber.

14 . The device according to claim 6 , wherein the device further comprises:
at least one layer selected from the group consisting of an electron injection layer (EIL) and a hole injection layer (HIL); a light absorbing layer; and a conducting layer.

15 . The device according to claim 6 , wherein the device further comprises:
an amorphous silicon layer; and a conducting layer.

16 . The device according to claim 6 , wherein the first layer is adapted to function as part of a solar cell or a solar energy conversion device.

Assignees

• Univ Princeton

Inventors

• Carter Emily Ann
• Alidoust Nima

Classifications

• H10P14/3444

  P-type · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3442

  N-type · CPC title

• H10W74/481

  comprising semiconductor materials · CPC title

• H10W20/4403

  based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title