Photovoltaic devices, photovoltaic modules provided therewith, and solar power generation systems

US2017338365A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2017338365-A1
Application numberUS-201515522117-A
CountryUS
Kind codeA1
Filing dateOct 23, 2015
Priority dateOct 31, 2014
Publication dateNov 23, 2017
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

n-type amorphous semiconductor layers ( 4 ) and p-type amorphous semiconductor layers ( 5 ) are alternately disposed on the back surface of a semiconductor substrate ( 1 ) so as to be separated from each other at a desired interval paralleled with the direction of the surface of the semiconductor substrate ( 1 ). An electrode ( 6 ) is disposed on the n-type amorphous semiconductor layer ( 4 ), and an electrode ( 7 ) is disposed on the p-type amorphous semiconductor layer ( 5 ). A protective film ( 8 ) includes an insulating film, and is disposed on a passivation film ( 3 ), the n-type amorphous semiconductor layer ( 4 ), the p-type amorphous semiconductor layer ( 5 ), and the electrodes ( 6, 7 ), so as to be in contact with the passivation film ( 3 ), the n-type amorphous semiconductor layer ( 4 ), the p-type amorphous semiconductor layer ( 5 ), and the electrodes ( 6, 7 ).

First claim

Opening claim text (preview).

1 . A photovoltaic device comprising: a semiconductor substrate; a first amorphous semiconductor layer which is formed on one surface of the semiconductor substrate and has a first conductivity type; a second amorphous semiconductor layer which is formed on the one surface of the semiconductor substrate, is formed to be adjacent to the first amorphous semiconductor layer paralleled with a direction of the surface of the semiconductor substrate, and has a second conductivity type which is opposite to the first conductivity type; a first electrode which is formed on the first amorphous semiconductor layer; a second electrode which is formed on the second amorphous semiconductor layer so as to be separated from the first electrode with a gap region in between; and a protective film which includes an insulating film and is formed on the first electrode, the second electrode, and the gap region. 2 . The photovoltaic device according to claim 1 , wherein the protective film has an opening portion on the first and second electrodes. 3 . The photovoltaic device according to claim 1 , wherein the protective film is continuously formed on the first electrode, the second electrode, and the gap region. 4 . The photovoltaic device according to claim 1 , wherein the protective film is further formed on a peripheral region of the semiconductor substrate. 5 . The photovoltaic device according to claim 1 , wherein the protective film includes an inorganic insulating layer and an amorphous semiconductor layer. 6 . A photovoltaic module comprising: a plurality of photovoltaic devices, wherein each of the plurality of photovoltaic devices is the photovoltaic device according to claim 1 . 7 . A solar power generation system comprising: a photovoltaic module array including a plurality of photovoltaic modules, a combiner box being connected to the photovoltaic module array, a power conditioner being connected to the combiner box, a distribution board being connected to the power conditioner and an electrical equipment, and a power meter being connected to the distribution board and grid interconnection, wherein each of plurality of photovoltaic modules is the photovoltaic module according to claim 6 . 8 . The solar power generation system according to claim 7 , further comprising a storage battery being connected to the power conditioner.

Assignees

Inventors

Classifications

  • comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes · CPC title

  • Energy storage means, e.g. batteries, structurally associated with PV modules · CPC title

  • Monitoring or testing of PV systems, e.g. load balancing or fault identification · CPC title

  • Electricity · mapped topic

  • Electricity · mapped topic

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What does patent US2017338365A1 cover?
n-type amorphous semiconductor layers ( 4 ) and p-type amorphous semiconductor layers ( 5 ) are alternately disposed on the back surface of a semiconductor substrate ( 1 ) so as to be separated from each other at a desired interval paralleled with the direction of the surface of the semiconductor substrate ( 1 ). An electrode ( 6 ) is disposed on the n-type amorphous semiconductor layer ( 4 ), …
Who is the assignee on this patent?
Sharp Kk
What technology area does this patent fall under?
Primary CPC classification H01L31/0747. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Nov 23 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).