Agglomerated boron nitride particles, composition containing said particles, and three-dimensional integrated circuit having layer comprising said composition

Patent metadata

Field	Value
Publication number	US-2017335160-A1
Application number	US-201715667246-A
Country	US
Kind code	A1
Filing date	Aug 2, 2017
Priority date	Nov 29, 2011
Publication date	Nov 23, 2017
Grant date	—

Abstract

To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m 2 /g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 μm and at most 1 μm, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s.

First claim

1 . Agglomerated boron nitride particles constituted by hexagonal boron nitride primary particles, which have a card-house structure of the hexagonal boron nitride primary particles.

2 . The agglomerated boron nitride particles according to claim 1 , which are spherical.

3 . The agglomerated boron nitride particles according to claim 1 , wherein the hexagonal boron nitride particles are radially arranged.

4 . The agglomerated boron nitride particles according to claim 1 , which have such a structure that the planar portion of each hexagonal boron nitride primary particle is in contact with the end surface portion of another hexagonal boron nitride primary particle.

5 . The agglomerated boron nitride particles according to claim 1 , which have a crystallite size (La) of the 100 plane of at least 500 Å.

6 . The agglomerated boron nitride particles according to claim 1 , which have an oxygen content of at most 0.30 wt %.

7 . The agglomerated boron nitride particles according to claim 1 , which have a total pore volume of at most 2.15 cm 3 /g.

8 . The agglomerated boron nitride particles according to claim 1 , wherein the bulk density is at least 0.3 g/cm 3 .

9 . A process for producing agglomerated boron nitride particles, the p-process comprising:
granulating a slurry comprising a material boron nitride powder, wherein the total oxygen content of the material boron nitride powder is at least 1 wt % and at most 10 wt %, and the material boron nitride powder satisfies the following conditions (1) and/or (2):
(1) the total pore volume is at most 1.0 cm 3 /g; and
(2) the specific surface area is at least 20 m 2 /g.

10 . The process for producing agglomerated boron nitride particles according to claim 9 , wherein the slurry comprising a material boron nitride powder is granulated into spherical particles by a spray drying method, and the obtained granulated particles are subjected to heat treatment in a non-oxidizing gas atmosphere.

11 . The process for producing agglomerated boron nitride particles according to claim 9 , wherein the slurry comprising a material boron nitride powder comprises a metal oxide in an amount of at least 1 wt % and at most 30 wt % based on the material boron nitride powder.

12 . A composition, comprising:
a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s; and a filler (B) comprising the agglomerated boron nitride particles as defined in claim 1 .

13 . The composition according to claim 10 , comprising the filler (B) in an amount of at least 40 parts by weight and at most 400 parts by weight per 100 parts by weight of the resin (A).

14 . A composition, comprising:
a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s; and a filler (B) comprising agglomerated boron nitride particles produced by the process for producing agglomerated boron nitride particles as defined in claim 9 .

15 . The composition according to claim 14 , comprising the filler (B) in an amount of at least 40 parts by weight and at most 400 parts by weight per 100 parts by weight of the resin (A).

16 . The composition according to claim 12 , further comprising: a curing agent (C).

17 . The composition according to claim 12 , further comprising: a flux (D).

18 . The composition according to claim 12 , wherein the resin (A) is a thermosetting resin.

19 . A composition coating liquid comprising:
the composition according to claim 12 ; and an organic solvent (E).

20 . A process for producing a three-dimensional integrated circuit, the process comprising:
forming a film of the composition coating liquid according to claim 19 on the surface of a plurality of semiconductor substrates; and pressure-bonding the semiconductor substrates.

21 . A molded product comprising the agglomerated boron nitride particles according to claim 1 .

22 . A molded product comprising the composition according to claim 12 .

Assignees

• Mitsubishi Chem Corp

Inventors

• Yamazaki Masanori
• Abe Mari
• Murase Tomohide
• Kawase Yasuhiro
• Ikemoto Makoto
• Kiritani Hideki
• Matsushita Yasunori

Classifications

• H10D84/01

  Manufacture or treatment · CPC title

• H10W72/073

  of die-attach connectors · CPC title

• H10W72/30

  Die-attach connectors · CPC title

• C01B21/064 Primary

  with boron · CPC title

• C01P2004/62

  Submicrometer sized, i.e. from 0.1-1 micrometer · CPC title