Semiconductor device and method of manufacturing thereof
US-2017323924-A1 · Nov 9, 2017 · US
US2017323923A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017323923-A1 |
| Application number | US-201615268646-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 19, 2016 |
| Priority date | May 4, 2016 |
| Publication date | Nov 9, 2017 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Described herein are semiconductor materials suitable for direct conversion of ionizing radiation to electron hole pairs. The material described herein have improved high-flux photon counting performance and lower photocurrent leakage compared to typically used semiconductors.
Opening claim text (preview).
1 . A photon counting device comprising a direct conversion layer of at least 1 mm thickness and comprising a Group II-VI semiconductor layer of Formula I: A Te y Se (1-y) I; wherein A is Cd, Zn, Hg, Mg, or Mn, or a combination thereof; and y ranges from 0 to 1. 2 . The photon counting device of claim 1 wherein A is Cd x Zn (1-x) , and x ranges from 0 to 1. 3 . The photon counting device of claim 2 , wherein x is about 0.9. 4 . The photon counting device of claim 1 , wherein y is about 0.9. 5 . The photon counting device of claim 1 , wherein the Group II-VI semiconductor is a CZT semiconductor wherein up to about 10% of Te is replaced with Se. 6 . The photon counting device of claim 1 , wherein Formula I is Cd (0.9) Zn (0.1) Te (0.9) Se (0.1) . 7 . The photon counting device of claim 1 , wherein the Group II-VI semiconductor layer is located between a cathode electrode and an anode electrode. 8 . The photon counting device of claim 7 , further comprising a metal oxide layer deposited between the Group II-VI semiconductor layer and the cathode electrode, wherein the metal oxide is selected from the group consisting of aluminum oxide (Al 2 O 3 ), gallium oxide (Ga 2 O 3 ), hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), magnesium oxide (MgO) and combinations thereof. 9 . The photon counting device of claim 8 , wherein the metal oxide comprises Al 2 O 3 , MgO, or a combination thereof. 10 . The photon counting device of claim 8 , wherein the metal oxide comprises Al 2 O 3 . 11 . An X-ray imaging device comprising a photon counting device of claim 1 .
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Related publications grouped by family.
Answers are generated from the same data shown on this page.