Photon counting devices

US2017323923A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2017323923-A1
Application numberUS-201615268646-A
CountryUS
Kind codeA1
Filing dateSep 19, 2016
Priority dateMay 4, 2016
Publication dateNov 9, 2017
Grant date

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Abstract

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Described herein are semiconductor materials suitable for direct conversion of ionizing radiation to electron hole pairs. The material described herein have improved high-flux photon counting performance and lower photocurrent leakage compared to typically used semiconductors.

First claim

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1 . A photon counting device comprising a direct conversion layer of at least 1 mm thickness and comprising a Group II-VI semiconductor layer of Formula I: A Te y Se (1-y)   I; wherein A is Cd, Zn, Hg, Mg, or Mn, or a combination thereof; and y ranges from 0 to 1. 2 . The photon counting device of claim 1 wherein A is Cd x Zn (1-x) , and x ranges from 0 to 1. 3 . The photon counting device of claim 2 , wherein x is about 0.9. 4 . The photon counting device of claim 1 , wherein y is about 0.9. 5 . The photon counting device of claim 1 , wherein the Group II-VI semiconductor is a CZT semiconductor wherein up to about 10% of Te is replaced with Se. 6 . The photon counting device of claim 1 , wherein Formula I is Cd (0.9) Zn (0.1) Te (0.9) Se (0.1) . 7 . The photon counting device of claim 1 , wherein the Group II-VI semiconductor layer is located between a cathode electrode and an anode electrode. 8 . The photon counting device of claim 7 , further comprising a metal oxide layer deposited between the Group II-VI semiconductor layer and the cathode electrode, wherein the metal oxide is selected from the group consisting of aluminum oxide (Al 2 O 3 ), gallium oxide (Ga 2 O 3 ), hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), magnesium oxide (MgO) and combinations thereof. 9 . The photon counting device of claim 8 , wherein the metal oxide comprises Al 2 O 3 , MgO, or a combination thereof. 10 . The photon counting device of claim 8 , wherein the metal oxide comprises Al 2 O 3 . 11 . An X-ray imaging device comprising a photon counting device of claim 1 .

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What does patent US2017323923A1 cover?
Described herein are semiconductor materials suitable for direct conversion of ionizing radiation to electron hole pairs. The material described herein have improved high-flux photon counting performance and lower photocurrent leakage compared to typically used semiconductors.
Who is the assignee on this patent?
Gen Electric
What technology area does this patent fall under?
Primary CPC classification H01L27/14659. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Nov 09 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).