Semiconductor device for radiation detection
US-2016172396-A1 · Jun 16, 2016 · US
Semiconductor device and semiconductor device manufacturing method
US9704912B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9704912-B2 |
| Application number | US-201615273139-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 22, 2016 |
| Priority date | Sep 24, 2015 |
| Publication date | Jul 11, 2017 |
| Grant date | Jul 11, 2017 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
The present disclosure provides a semiconductor device including: a first semiconductor layer including a first region and a second region adjacent to the first region; a first insulator layer provided above the first semiconductor layer; an intermediate semiconductor layer, having an n-type conduction, provided above the first region of the first semiconductor layer and above the first insulator layer; a second insulator layer provided above the intermediate semiconductor layer; a second semiconductor layer provided above the first region of the first semiconductor layer and above the second insulator layer; a sensor formed in the second region of the first semiconductor layer; a contact electrode connected to the intermediate semiconductor layer; and a circuit element formed in the second semiconductor layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a first semiconductor layer including a first region and a second region adjacent to the first region; a first insulator layer provided above the first semiconductor layer; an intermediate semiconductor layer, having an n-type conduction, provided above the first region of the first semiconductor layer and above the first insulator layer; a second insulator layer provided above the intermediate semiconductor layer; a second semiconductor layer provided above the first region of the first semiconductor layer and above the second insulator layer; a sensor formed in the second region of the first semiconductor layer; a contact electrode connected to the intermediate semiconductor layer; and a circuit element formed in the second semiconductor layer. 2. The semiconductor device of claim 1 , wherein: the sensor includes a p-type semiconductor region and an n-type semiconductor region provided at a face at a first insulator layer side of the first semiconductor layer, and a back face electrode provided at a face at an opposite side from the face at the first insulator layer side of the first semiconductor layer; and an anode of a power source is connected to the n-type semiconductor region and to the back face electrode, and a cathode of the power source is connected to the p-type semiconductor region and to the contact electrode. 3. A semiconductor device comprising: a first semiconductor layer including a first region and a second region adjacent to the first region; a first insulator layer provided above the first semiconductor layer; an intermediate semiconductor layer, having a p-type conduction, provided above the first region of the first semiconductor layer and above the first insulator layer; a second insulator layer provided above the intermediate semiconductor layer; a second semiconductor layer provided above the first region of the first semiconductor layer and above the second insulator layer; a sensor formed in the second region of the first semiconductor layer; a contact electrode connected to the intermediate semiconductor layer; and a circuit element formed in the second semiconductor layer, wherein the intermediate semiconductor layer has a thickness such that a first inversion layer formed at a first insulator layer side of the intermediate semiconductor layer due to positive charges retained at the vicinity of a boundary between the intermediate semiconductor layer and the first insulator layer, and a second inversion layer formed at the second insulator layer side of the intermediate semiconductor layer due to positive charges retained at the vicinity of a boundary between the intermediate semiconductor layer and the second insulator layer, are not contiguous to each other. 4. The semiconductor device of claim 3 , wherein the thickness of the intermediate semiconductor layer is 150 nm or greater. 5. The semiconductor device of claim 3 , wherein: the sensor includes a p-type semiconductor region and an n-type semiconductor region provided at a face at a first insulator layer side of the first semiconductor layer, and a back face electrode provided at a face at an opposite side from the face at the first insulator layer side of the first semiconductor layer; and an anode of a power source is connected to the n-type semiconductor region and to the back face electrode, and a cathode of the power source is connected to the p-type semiconductor region and to the contact electrode. 6. A semiconductor device comprising: a first semiconductor layer including a first region and a second region adjacent to the first region; a first insulator layer provided above the first semiconductor layer; an intermediate semiconductor layer provided above the first region of the first semiconductor layer and above the first insulator layer; a second insulator layer provided above the intermediate semiconductor layer; a second semiconductor layer provided above the first region of the first semiconductor layer and above the second insulator layer; a sensor formed in the second region of the first semiconductor layer; a first contact region, having a p-type conduction, formed above the intermediate semiconductor layer, and a second contact region, having an n-type conduction, electrically connected to the first contact region; a contact electrode connected to the first contact region and to the second contact region; and a circuit element formed in the second semiconductor layer. 7. The semiconductor device of claim 6 , further comprising a connecting electrode that covers the surfaces of the first contact region and the second contact region. 8. The semiconductor device of claim 7 , wherein the connecting electrode is configured including an alloy layer. 9. The semiconductor device of claim 6 , wherein: the sensor includes a p-type semiconductor region and an n-type semiconductor region provided at a face at a first insulator layer side of the first semiconductor layer, and a back face electrode provided at a face at an opposite side from the face at the first insulator layer side of the first semiconductor layer; and an anode of a power source is connected to the n-type semiconductor region and to the back face electrode, and a cathode of the power source is connected to the p-type semiconductor region and to the contact electrode.
Assignees
Inventors
Classifications
with semiconductor detectors · CPC title
Electricity · mapped topic
- H01L27/14658Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9704912B2 cover?
- The present disclosure provides a semiconductor device including: a first semiconductor layer including a first region and a second region adjacent to the first region; a first insulator layer provided above the first semiconductor layer; an intermediate semiconductor layer, having an n-type conduction, provided above the first region of the first semiconductor layer and above the first insulat…
- Who is the assignee on this patent?
- Lapis Semiconductor Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L27/14658. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 11 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).