Two-Dimensional Graphene Cold Cathode, Anode, and Grid

Patent metadata

Field	Value
Publication number	US-2017323754-A1
Application number	US-201615145955-A
Country	US
Kind code	A1
Filing date	May 4, 2016
Priority date	May 4, 2016
Publication date	Nov 9, 2017
Grant date	—

Abstract

In an embodiment, a method includes forming a first diamond layer on a substrate and inducing a layer of graphene from the first diamond layer by heating the substrate and the first diamond layer. The method includes forming a second diamond layer on top of the layer of graphene and applying a mask to the second diamond layer. The mask includes a shape of a cathode, an anode, and one or more grids. The method further includes forming a two-dimensional cold cathode, a two-dimensional anode, and one or more two-dimensional grids by reactive-ion electron-beam etching. Each of the two-dimensional cold cathode, the two-dimensional anode, and the one or more two-dimensional grids includes a portion of the first diamond layer, the graphene layer, and the second diamond layer such that the graphene layer is positioned between the first diamond layer and the second diamond layer.

First claim

1 . A method, comprising:
forming a first diamond layer on a substrate; inducing a layer of graphene from the first diamond layer by heating the substrate and the first diamond layer; forming a second diamond layer on top of the layer of graphene; applying a mask to the second diamond layer, wherein the mask comprises a shape of a cathode, an anode, and one or more grids; and forming a two-dimensional cold cathode, a two-dimensional anode, and one or more two-dimensional grids by reactive-ion electron-beam etching, wherein each of the two-dimensional cold cathode, the two-dimensional anode, and the one or more two-dimensional grids comprises a portion of the first diamond layer, the graphene layer, and the second diamond layer such that the graphene layer is positioned between the first diamond layer and the second diamond layer.

2 . The method of claim 1 , wherein forming the first diamond layer on a substrate comprises coating the substrate with a poly(hydridocarbyne) layer and heating the substrate and the poly(hydridocarbyne) layer in an inert atmosphere.

3 . The method of claim 2 , wherein the substrate and the poly(hydridocarbyne) layer are heated at a temperature between 150 and 800 degrees Celsius.

4 . The method of claim 2 , wherein coating the substrate comprises spin-coating the substrate.

5 . The method of claim 1 , wherein the substrate and the first diamond layer are heated at a temperature between 400 degrees Celsius and 500 degrees Celsius.

6 . The method of claim 1 , wherein the substrate and the first diamond layer are heated at a temperature between 900 degrees Celsius and 1900 degrees Celsius.

7 . The method of claim 1 , wherein each edge of the two-dimensional anode comprises a round edge.

8 . The method of claim 1 , wherein the two-dimensional cold cathode comprises a pointed tip and a plurality of round edges.

9 . An apparatus, comprising:
a substrate; a two-dimensional anode positioned on the substrate; a two-dimensional cold cathode positioned on the substrate opposed to the two-dimensional anode; and one or more two-dimensional grids each including a portion positioned on the substrate between the two-dimensional anode and the two-dimensional cold cathode; wherein each of the two-dimensional anode, the two-dimensional cold cathode, and the one or more two-dimensional grids comprises:
a first diamond layer;
a second diamond layer; and
a layer of graphene induced from the first diamond layer, the layer of graphene positioned between the first diamond layer and the second diamond layer.

10 . The apparatus of claim 9 , wherein the first diamond layer comprises a hexagonal diamond.

11 . The apparatus of claim 9 , wherein the layer of graphene is induced from the first diamond layer by heating the substrate and the first diamond layer.

12 . The apparatus of claim 9 , wherein each of the two-dimensional anode, the two-dimensional cold cathode, and the one or more two-dimensional grids are formed by reactive-ion electron-beam etching.

13 . The apparatus of claim 9 , wherein the two-dimensional cold cathode comprises a pointed tip and at least two round edges.

14 . A method, comprising:
forming a first silicon carbide layer on a substrate; inducing a layer of graphene from the first silicon carbide layer by heating the substrate and the first silicon carbide layer; forming a second silicon carbide layer on top of the layer of graphene; applying a mask to the second silicon carbide layer, wherein the mask comprises a shape of a cathode, an anode, and one or more grids; and forming a two-dimensional cold cathode, a two-dimensional anode, and one or more two-dimensional grids by reactive-ion electron-beam etching, wherein each of the two-dimensional cold cathode, the two-dimensional anode, and the one or more two-dimensional grids comprises a portion of the first silicon carbide layer, the graphene layer, and the second silicon carbide layer such that the graphene layer is positioned between the first silicon carbide layer and the second silicon carbide layer.

15 . The method of claim 14 , wherein forming the first silicon carbide layer comprises coating the substrate with poly(methylsilyne) or poly(silyne-co-hydridocarbyne).

16 . The method of claim 15 , wherein coating the substrate comprises spin-coating the substrate.

17 . The method of claim 14 , wherein inducing the layer of graphene from the first silicon carbide layer comprises heating the substrate and the first silicon carbide layer at a temperature between 1500 degrees Celsius and 1700 degrees Celsius.

18 . The method of claim 14 , wherein each edge of the two-dimensional anode comprises a round edge.

19 . The method of claim 14 , wherein the two-dimensional cold cathode comprises a pointed tip and a plurality of round edges.

20 . The method of claim 14 , wherein forming the second silicon carbide layer comprises:
coating the layer of graphene with one of poly(methylsilyne) or poly(hydridocarbyne); and thermalizing the poly(methylsilyne) or poly(hydridocarbyne).

Assignees

• Lockheed Corp

Inventors

• Findley David Glen

Classifications

• H01J2201/30469

  Carbon nanotubes (CNTs) · CPC title

• H01J1/3042 Primary

  microengineered, e.g. Spindt-type · CPC title

• H01J9/025 Primary

  of field emission cathodes · CPC title

• B05D2203/30

  Other inorganic substrates, e.g. ceramics, silicon · CPC title

• B05D1/005

  Spin coating · CPC title