Substrate-processing system and method of coating carbon-protection layer therefor

Patent metadata

Field	Value
Publication number	US-2016343547-A1
Application number	US-201615148440-A
Country	US
Kind code	A1
Filing date	May 6, 2016
Priority date	May 20, 2015
Publication date	Nov 24, 2016
Grant date	—

Abstract

Provided is a substrate processing system including a plasma processing module and a protection layer coated on the plasma processing module. The protection layer may include a diamond film.

First claim

1 . A substrate processing system, comprising:
a plasma processing module; and a protection layer coated on the plasma processing module, wherein the protection layer comprises a first diamond film.

2 . The substrate processing system of claim 1 , wherein the plasma processing module comprises:
an electrostatic chuck configured to fasten a substrate; and an edge ring comprising: a focus ring provided at an edge of the substrate; and a cover ring enclosing the focus ring, wherein the first diamond film is provided on the focus ring.

3 . The substrate processing system of claim 2 , wherein the focus ring comprises silicon carbide, and
wherein the first diamond film has a (111) crystal plane.

4 . The substrate processing system of claim 1 , wherein the first diamond film comprises:
micro-crystalline diamonds; or nano-crystalline diamonds having a smaller size than a size of the micro-crystalline diamonds.

5 . The substrate processing system of claim 4 , wherein the first diamond film further comprises graphite that is mixed with the micro-crystalline diamonds or the nano-crystalline diamonds.

6 . The substrate processing system of claim 5 , wherein each of the micro- and nano-crystalline diamonds is provided to have a mixing ratio of 85% or higher in the first diamond film with respect to the graphite.

7 . The substrate processing system of claim 1 , wherein the protection layer further comprises a first graphene film disposed between the plasma processing module and the first diamond film.

8 . The substrate processing system of claim 7 , wherein the protection layer further comprises:
a second graphene film provided on the first diamond film; and a second diamond film provided on the second graphene film.

9 . The substrate processing system of claim 8 , wherein the protection layer further comprises a carbyne film provided on the second diamond film.

10 . The substrate processing system of claim 1 , wherein the plasma processing module comprises a chamber, and
wherein the protection layer is coated on an inner surface of the chamber.

11 - 15 . (canceled)

16 . A substrate processing system, comprising:
an upper housing; a lower housing below the upper housing; and a protection layer coated on an inner surface of the lower housing, wherein the protection layer comprises a first diamond film.

17 . The substrate processing system of claim 16 , wherein the lower housing comprises:
a wall liner; an electrostatic chuck provided in the wall liner and configured to fasten a substrate; and a first ring provided at an edge of the substrate, the first ring containing silicon carbide, wherein the first diamond film has a (111) crystal plane.

18 . The substrate processing system of claim 17 , wherein the protection layer further comprises a first graphene film provided on the first ring and the first diamond film.

19 . The substrate processing system of claim 16 , wherein the protection layer further comprises:
a second graphene film provided on the first diamond film; and a second diamond film provided on the second graphene film.

20 . The substrate processing system of claim 19 , wherein the protection layer further comprises a carbyne film provided on the second diamond film.

21 - 32 . (canceled)

33 . A substrate processing apparatus, comprising:
a processing chamber configured to process a substrate using reaction gas; and a protection layer configured to protect the processing chamber from the reaction gas supplied into the processing chamber, wherein the protection layer comprises a first diamond film.

34 . The substrate processing apparatus of claim 33 , wherein the processing chamber comprises:
a lower housing; and an upper housing detachably attached to the lower housing, wherein the first diamond film is coated on an inner surface of the lower housing.

35 . The substrate processing apparatus of claim 34 , wherein the first diamond film is coated on an inner surface of the upper housing.

36 . The substrate processing apparatus of claim 33 , wherein the first diamond film comprises micro-crystalline diamonds (MCD) or nano-crystalline diamonds (NCD) and
wherein a particle size of the MCD is larger than a particle size of the NCD.

37 . The substrate processing apparatus of claim 36 , wherein the first diamond film further comprises graphite that is mixed with the MCD or the NCD.

38 - 41 . (canceled)

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lim Seungkyu
• Park Myoung Soo
• Sung Dougyong

Classifications

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/72

  using electrostatic chucks · CPC title

• H01L21/6831

  Electricity · mapped topic

• C23C16/50

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title

• H01J37/32009

  Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources (plasma generation in general H05H1/24) · CPC title