Method of Producing Silicon Hydride Oxide-Containing Organic Solvent

Patent metadata

Field	Value
Publication number	US-2017313592-A1
Application number	US-201515523921-A
Country	US
Kind code	A1
Filing date	Oct 13, 2015
Priority date	Nov 4, 2014
Publication date	Nov 2, 2017
Grant date	—

Abstract

A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si—H groups)/(Si—H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane.

First claim

1 . method of producing a silicon hydride oxide-containing organic solvent comprising:
blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof.

2 . The method according to claim 1 , wherein the silicon hydride comprises a cyclic silane.

3 . The method according to claim 1 , wherein the silicon hydride comprises cyclopentasilane.

4 . The method according to claim 1 , wherein the silicon hydride oxide contains a proportion of (residual Si—H groups)/(Si—H groups before oxidation) of 1 to 40 mol %.

5 . The method according to claim 1 , further comprising
obtaining the silicon hydride obtaining a solution containing a cyclic silane expressed by Formula (2):
(SiR 3 R 4 ) n   Formula (2)

where R 3 and R 4 respectively indicate halogen atoms, and n is an integer of 4 to 6, by reacting a cyclic silane expressed by Formula (1):
(SiR 1 R 2 ) n   Formula (1)

where R 1 and R 2 indicate independently hydrogen atoms, C1 to C6 alkyl groups, or substituted or unsubstituted phenyl groups, R 1 and R 2 are not hydrogen atoms simultaneously, and n is an integer of 4 to 6, with a hydrogen halide in the presence of an aluminum halide, and
obtaining a cyclic silane expressed by Formula (3):
(SiH 2 ) n   Formula (3)

where n is an integer of 4 to 6 by reducing the cyclic silane expressed by Formula (2) with hydrogen or a lithium aluminum hydride.

6 . The method according to claim 5 , further comprising, after obtaining the solution containing the cyclic silane expressed by Formula (2), distilling the solution.

7 . The method according to claim 1 , wherein the organic solvent contains the polymer of the silicon hydride.

8 . The method according to claim 1 , wherein the oxygen-containing gas is air.

9 . The method according to claim 7 , further comprising generating the polymer of the silicon hydride by contacting the silicon hydride with metallic rhodium in an inert atmosphere.

Assignees

• Thin Film Electronics Asa

Inventors

• Goto Yuichi
• Endo Masahisa
• Son Gun
• Negai Kentaro

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6684

  the compound comprising silicon and oxygen · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• C08G77/60

  in which all the silicon atoms are connected by linkages other than oxygen atoms · CPC title

• C01B33/04

  Hydrides of silicon · CPC title