Removal liquid and method for removing oxide of group iii-v element, treatment liquid for treating compound of group iii-v element, oxidation prevention liquid for preventing oxidation of group iii-v element, treatment liquid for treating semiconductor substrate, and method for producing semiconductor substrate product

Patent metadata

Field	Value
Publication number	US-2017309492-A1
Application number	US-201715647351-A
Country	US
Kind code	A1
Filing date	Jul 12, 2017
Priority date	Feb 12, 2015
Publication date	Oct 26, 2017
Grant date	—

Abstract

Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.

First claim

What is claimed is:

1 . A removal liquid for removing an oxide of a Group III-V element, comprising:
an acid; and a mercapto compound.

2 . The removal liquid according to claim 1 , wherein the mercapto compound contains at least one of a carboxyl group or a hydroxyl group, and a thiol group.

3 . The removal liquid according to claim 1 , wherein the mercapto compound has 1 to 12 carbon atoms and one or more and four or less thiol groups within a molecule.

4 . The removal liquid according to claim 1 , wherein the acid is an inorganic acid.

5 . The removal liquid according to claim 4 , wherein the inorganic acid is hydrochloric acid.

6 . The removal liquid according to claim 1 , wherein the elution of a Group III-V element is suppressed or prevented and an oxide of a Group III-V element is removed.

7 . The removal liquid according to claim 1 , wherein the Group III-V element is at least one selected from In, Ga, As, and P.

8 . The removal liquid according to claim 1 , wherein the content of the acid is 0.05 mass % or more and 20 mass % or less.

9 . The removal liquid according to claim 1 , wherein the content of the mercapto compound is 0.01 mass % or more and 10 mass % or less.

10 . The removal liquid according to claim 1 , wherein the mercapto compound is represented by any one of the following Formulae (1) to (4):

where R 1 to R 5 are each independently a hydrogen atom, a thiol group, a hydroxyl group, a carboxyl group, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, an amino group, an acyl group, or an acylamino group, and R 1 to R 5 may be bonded to one another to form a ring;
m and n are an integer and m+n is an integer of 1 to 12;
one or more of R 1 to R 5 in a molecule are present as a carboxyl group or a hydroxyl group;
A is a carboxyl group or a hydroxyl group;
Cy is a structure obtained by removing m1+n1+p1 number of hydrogen atoms from a cyclic aliphatic hydrocarbon;
R 6 is an alkyl group, an alkenyl group, an aryl group, an aralkyl group, an amino group, an acyl group, or an acylamino group;
n1, n2, p1, and p2 are an integer of 1 to 4 and m1 and m2 are an integer of 0 to 4, provided that n2+m2+p2 is 6 or less;
HA represents a structure obtained by removing m3+n3+p3 number of hydrogen atoms from an N-containing heteroaromatic ring; and
n3 and m3 are an integer of 0 to 5, and p3 is an integer of 1 to 4.

11 . A treatment liquid for treating a semiconductor substrate, comprising:
an acid; and a mercapto compound, wherein the mercapto compound contains a thiol group and at least one of a carboxyl group or a hydroxyl group, or has 1 to 12 carbon atoms and one or more and four or less thiol groups within a molecule.

12 . A removal method for removing an oxide of a Group III-V element, comprising:
applying a treatment liquid containing an acid and a mercapto compound to an oxide of a Group III-V element to remove the oxide of a Group III-V element.

13 . The removal method according to claim 12 , wherein the elution of a Group III-V element is suppressed or prevented and an oxide of a Group III-V element is removed.

14 . The removal method according to claim 12 , wherein the treatment is carried out under a condition that light of 500 nm or less is blocked or under a dark room condition.

15 . A method for producing a semiconductor substrate product, comprising producing a semiconductor substrate product through the removal method according to claim 12 .

16 . A treatment liquid for treating a compound of a Group III-V element, comprising:
an acid; and a mercapto compound.

17 . An oxidation prevention liquid for preventing the oxidation of a Group III-V element, comprising:
an acid; and a mercapto compound.

Assignees

• Fujifilm Corp

Inventors

• Takahashi Satomi
• Bak Seongmu
• Mizutani Atsushi
• Inaba Tadashi

Classifications

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P50/283

  by chemical means · CPC title