Organic Thin Film Transistor and Manufacturing Method Thereof, Array Substrate

Patent metadata

Field	Value
Publication number	US-2017294584-A1
Application number	US-201715634748-A
Country	US
Kind code	A1
Filing date	Jun 27, 2017
Priority date	Dec 16, 2014
Publication date	Oct 12, 2017
Grant date	—

Abstract

An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor includes: forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, the sheltered region corresponding to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.

First claim

1 . A manufacturing method of an organic thin film transistor, comprising:
forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, wherein, the sheltered region corresponds to a region where an active layer of the organic thin film transistor is configured to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped, wherein, the unsheltered region of the organic semiconductor layer after being doped has a conductivity smaller than a conductivity of the non-doped region of the organic semiconductor layer.

2 . The method according to claim 1 , prior to the doping the organic semiconductor layer, further comprising:
forming a gate electrode on a base substrate by a patterning process; forming a gate insulating layer on the gate electrode; and forming a source electrode and a drain electrode on the gate insulating layer by a patterning process, wherein, the doped organic semiconductor layer is formed on the source electrode and the drain electrode, and the source electrode and the drain electrode are connected to a non-doped region of the organic semiconductor layer.

3 . The method according to claim 1 , further comprising:
forming a first insulating layer on the doped organic semiconductor layer; forming a gate electrode on the first insulating layer by a patterning process; forming a second insulating layer on the gate electrode; and forming a source electrode and a drain electrode on the second insulating layer by a patterning process, wherein, the source electrode and the drain electrode are connected to a non-doped region of the organic semiconductor layer through via holes.

4 . The method according to claim 3 , prior to the forming the organic semiconductor layer, further comprising:
forming a light blocking layer on a base substrate; and forming a buffer layer on the light blocking layer.

5 . The method according to claim 1 , wherein, the forming the organic semiconductor layer comprises:
forming the organic semiconductor layer by a solution method or vacuum evaporation method.

6 . The method according to claim 2 , wherein, the partially sheltering the organic semiconductor layer and the doping the organic semiconductor layer comprise:
partially sheltering the organic semiconductor layer with a metal mask, so that the sheltered region and the unsheltered region are formed on the organic semiconductor layer, wherein, the region sheltered by the metal mask corresponds to the region where the active layer of the organic thin film transistor is configured to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.

7 . The method according to claim 3 , wherein, the partially sheltering the organic semiconductor layer and the doping the organic semiconductor layer comprise:
partially sheltering the organic semiconductor layer with a metal mask, so that the sheltered region and the unsheltered region are formed on the organic semiconductor layer, wherein, the region sheltered by the metal mask corresponds to the region where the active layer of the organic thin film transistor is configured to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.

8 . The method according to claim 2 , wherein, the partially sheltering the organic semiconductor layer and the doping the organic semiconductor layer comprise:
coating a layer of photoresist on the organic semiconductor layer, and removing a part of the photoresist by exposure and development, so that a photoresist covering region and a photoresist uncovering region are formed on the organic semiconductor layer, wherein, the photoresist covering region corresponds to the region where the active layer of the organic thin film transistor is configured to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the photoresist covering region is not doped, and the organic semiconductor layer in correspondence with the photoresist uncovering region is doped; and removing the photoresist at the photoresist covering region.

9 . The method according to claim 3 , wherein, the partially sheltering the organic semiconductor layer and the doping the organic semiconductor layer comprise:
coating a layer of photoresist on the organic semiconductor layer, and removing a part of the photoresist by exposure and development, so that a photoresist covering region and a photoresist uncovering region are formed on the organic semiconductor layer, wherein, the photoresist covering region corresponds to the region where the active layer of the organic thin film transistor is configured to be formed; doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the photoresist covering region is not doped, and the organic semiconductor layer in correspondence with the photoresist uncovering region is doped; and removing the photoresist at the photoresist covering region.

10 . The method according to claim 8 , wherein, the photoresist is a fluorinated photoresist.

11 . The method according to claim 9 , wherein, the photoresist is a fluorinated photoresist.

12 . The method according to claim 1 , wherein, the doping the organic semiconductor layer comprises doping the organic semiconductor layer by a solution method or vacuum evaporation method.

13 . The method according to claim 12 , wherein, a dopant used for doping the organic semiconductor layer is an organic small molecule.

14 . The method according to claim 1 , wherein, the unsheltered region of the organic semiconductor layer is formed into an insulating region after being doped.

15 . An organic thin film transistor, comprising an organic semiconductor layer that includes a doped region and a non-doped region, the non-doped region corresponding to a region where an active layer of the organic thin film transistor is configured to be formed.

16 . The organic thin film transistor according to claim 15 , wherein, a conductivity of the doped region is smaller than the conductivity of the non-doped region.

17 . The organic thin film transistor according to claim 16 , wherein, as seen from a planar view, the non-doped region is surrounded by the doped region.

18 . The organic thin film transistor according to claim 15 , further comprising a gate electrode, a gate insulating layer, a source electrode and a drain electrode, wherein, the gate electrode is separated from the organic semiconductor layer by the gate insulating layer, and the source electrode and the drain electrode are connected to the non-doped region of the organic semiconductor layer.

19 . An array substrate, comprising an organic thin film transistor, the organic thin film transistor comprising an organic semiconductor layer that includes a doped region and a non-doped region, the non-doped region corresponding to a region where an active layer of the organic thin

Assignees

• Boe Technology Group Co Ltd

Inventors

• Xie Yingtao
• Ouyang Shihong
• Cai Shucheng
• Shi Qiang
• Liu Ze
• Fong Honhang

Classifications

• H01L51/0015 Primary

  Electricity · mapped topic

• H01L51/105

  Electricity · mapped topic

• H01L51/0545

  Electricity · mapped topic

• H01L51/0541

  Electricity · mapped topic

• H01L51/107

  Electricity · mapped topic