Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Patent metadata

Field	Value
Publication number	US-2017263441-A1
Application number	US-201715448519-A
Country	US
Kind code	A1
Filing date	Mar 2, 2017
Priority date	Mar 9, 2016
Publication date	Sep 14, 2017
Grant date	—

Abstract

There is provided a method of manufacturing a semiconductor device, including forming a seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a halogen-based first processing gas to the substrate; supplying a non-halogen-based second processing gas to the substrate; and supplying a hydrogen-containing gas to the substrate. Further, the method further includes forming a film on the seed layer by supplying a third processing gas to the substrate.

First claim

What is claimed is:

1 . A method of manufacturing a semiconductor device, comprising:
forming a seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including:
supplying a halogen-based first processing gas to the substrate;
supplying a non-halogen-based second processing gas to the substrate; and
supplying a hydrogen-containing gas to the substrate; and
forming a film on the seed layer by supplying a third processing gas to the substrate.

2 . The method of claim 1 , wherein the act of forming the seed layer includes a period in which the act of supplying the halogen-based first processing gas and the act of supplying the hydrogen-containing gas are simultaneously performed.

3 . The method of claim 1 , wherein the act of forming the seed layer further includes exhausting the halogen-based first processing gas from a space where the substrate exists, and
wherein the act of forming the seed layer includes a period in which the act of exhausting the halogen-based first processing gas and the act of supplying the hydrogen-containing gas are simultaneously performed.

4 . The method of claim 2 , wherein the act of forming the seed layer further includes exhausting the halogen-based first processing gas from a space where the substrate exists, and
wherein the act of forming the seed layer further includes a period in which the act of exhausting the halogen-based first processing gas and the act of supplying the hydrogen-containing gas are simultaneously performed.

5 . The method of claim 1 , wherein the act of forming the seed layer includes a period in which the act of supplying the non-halogen-based second processing gas and the act of supplying the hydrogen-containing gas are simultaneously performed.

6 . The method of claim 1 , wherein the act of forming the seed layer further includes exhausting the non-halogen-based second processing gas from a space where the substrate exists, and
wherein the act of forming the seed layer includes a period in which the act of exhausting the non-halogen-based second processing gas and the act of supplying the hydrogen-containing gas are simultaneously performed.

7 . The method of claim 5 , wherein the act of forming the seed layer further includes exhausting the non-halogen-based second processing gas from a space where the substrate exists, and
wherein the act of forming the seed layer further includes a period in which the act of exhausting the non-halogen-based second processing gas and the act of supplying the hydrogen-containing gas are simultaneously performed.

8 . The method of claim 1 , wherein the act of forming the seed layer includes a period in which the act of supplying the halogen-based first processing gas and the act of supplying the hydrogen-containing gas are simultaneously performed and a period in which the act of supplying the non-halogen-based second processing gas and the act of supplying the hydrogen-containing gas are simultaneously performed.

9 . The method of claim 8 , wherein the act of forming the seed layer further includes:
exhausting the halogen-based first processing gas from a space where the substrate exists; and exhausting the non-halogen-based second processing gas from the space where the substrate exists, and wherein the act of forming the seed layer further includes: a period in which the act of exhausting the halogen-based first processing gas and the act of supplying the hydrogen-containing gas are simultaneously performed; and a period in which the act of exhausting the non-halogen-based second processing gas and the act of supplying the hydrogen-containing gas are simultaneously performed.

10 . The method of claim 8 , wherein a supply flow rate of the hydrogen-containing gas simultaneously supplied with the halogen-based first processing gas is set to be smaller than a supply flow rate of the hydrogen-containing gas simultaneously supplied with the non-halogen-based second processing gas.

11 . The method of claim 8 , wherein a supply flow rate of the hydrogen-containing gas simultaneously supplied with the halogen-based first processing gas is set to be larger than a supply flow rate of the hydrogen-containing gas simultaneously supplied with the non-halogen-based second processing gas.

12 . The method of claim 1 , wherein the act of forming the seed layer includes a period in which the act of supplying the halogen-based first processing gas and the act of supplying the non-halogen-based second processing gas are alternately performed under a state where the act of supplying the hydrogen-containing gas is performed.

13 . A substrate processing apparatus comprising:
a process chamber configured to accommodate a substrate; a first supply system configured to supply a halogen-based first processing gas to the substrate in the process chamber; a second supply system configured to supply a non-halogen-based second processing gas to the substrate in the process chamber; a third supply system configured to supply a third processing gas to the substrate in the process chamber; a fourth supply system configured to supply a hydrogen-containing gas to the substrate in the process chamber; and a control part configured to control the first supply system, the second supply system, the third supply system, and the fourth supply system to perform:
forming a seed layer on the substrate in the process chamber by performing a cycle a predetermined number of times, the cycle including supplying the halogen-based first processing gas to the substrate, supplying the non-halogen-based second processing gas to the substrate, and supplying the hydrogen-containing gas to the substrate; and
forming a film on the seed layer by supplying the third processing gas to the substrate.

14 . A non-transitory computer-readable recording medium storing a program that causes a computer to perform, on a substrate processing apparatus, a process in a process chamber of the substrate processing apparatus, the process comprising:
forming a seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including:
supplying a halogen-based first processing gas to the substrate;
supplying a non-halogen-based second processing gas to the substrate; and
supplying a hydrogen-containing gas to the substrate; and
forming a film on the seed layer by supplying a third processing gas to the substrate.

Assignees

• Hitachi Int Electric Inc

Inventors

• Orihashi Yugo
• Yuasa Kazuhiro
• Moriya Atsushi
• Nakaiso Naoharu

Classifications

• H10P14/3458

  Monocrystalline · CPC title

• H10P14/3456

  Polycrystalline · CPC title

• H10P14/3454

  Amorphous · CPC title

• H10P14/3442

  N-type · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title