Two-dimensional carbon nitride material and method of preparation

Patent metadata

Field	Value
Publication number	US-2017240422-A1
Application number	US-201415505510-A
Country	US
Kind code	A1
Filing date	Aug 21, 2014
Priority date	Aug 21, 2014
Publication date	Aug 24, 2017
Grant date	—

Abstract

Graphitic carbon nitride has been prepared and its structure confirmed by extensive characterization. This material has useful electronic, in particular semiconducting, properties. Crystalline thin films have been prepared. Synthesis may be carried out by condensation of unsaturated carbon- and nitrogen-containing compound(s) in inert solvent such as a salt melt, forming graphitic carbon nitride at a gas-liquid or solid-liquid interface.

First claim

1 . Graphitic carbon nitride.

2 . Graphitic carbon nitride as claimed in claim 1 , of the empirical formula C 3 N 4 , wherein the repeating unit is in the absence of hydrogen.

3 . Graphitic carbon nitride as claimed in claim 1 , of the empirical formula C 3 N 4 consisting exclusively of covalently-linked, sp 2 -hybridized carbon and nitrogen atoms.

4 . Graphitic carbon nitride as claimed in any preceding claim in the form of a film comprising stacked two-dimensional crystals of C 3 N 4 .

5 . Graphitic carbon nitride as claimed in claim 4 wherein the film comprises up to 1000 atomic layers.

6 . Graphitic carbon nitride as claimed in claim 4 wherein the film comprises up to 100 atomic layers.

7 . Graphitic carbon nitride as claimed in claim 4 wherein the film comprises 3 atomic layers.

8 . Graphitic carbon nitride as claimed in any preceding claim wherein the graphitic carbon nitride is triazine-based graphitic carbon nitride.

9 . Graphitic carbon nitride as claimed in any preceding claim, further comprising a doping agent.

10 . Product or device comprising graphitic carbon nitride as claimed in any preceding claim, on a substrate, and/or in combination with one or more layer of other material.

11 . Use of graphitic carbon nitride, as claimed in any of claims 1 to 9 , in electronics.

12 . Use of graphitic carbon nitride, as claimed in any of claims 1 to 9 , as a semiconductor.

13 . Method of preparing graphitic carbon nitride as claimed in any of claims 1 to 9 comprising the condensation of one or more unsaturated, carbon- and nitrogen-containing, compound, in the presence of an inert solvent.

14 . Method as claimed in claim 13 comprising surface-assisted synthesis such that the graphitic carbon nitride forms at a solid-liquid interface of or within a reactor, or at a gas-liquid interface.

15 . Method as claimed in claim 13 or claim 14 wherein said unsaturated, carbon- and nitrogen-containing, compound comprises one or more of a nitrile, imine, amine, amide, pyrrole, pyridine, isonitrile, cyanuric acid moiety, uric acid moiety or cyamelurine moiety.

16 . Method as claimed in claim 13 or claim 14 wherein said unsaturated, carbon- and nitrogen-containing, compound is dicyandiamide.

17 . Method as claimed in claim 13 or claim 14 wherein said unsaturated, carbon- and nitrogen-containing, compound is one of more of melamine, cyanamide, melam, or melem.

18 . Method as claimed in any of claims 13 to 17 wherein said inert solvent is a molten salt.

19 . Method as claimed in any of claims 13 to 17 wherein said inert solvent is a salt melt comprising one or more alkali halide.

20 . Method as claimed in any of claims 13 to 17 wherein said inert solvent is a salt melt comprising a eutectic mixture of lithium bromide and potassium bromide.

21 . Method as claimed in any of claims 13 to 20 wherein condensation is carried out a temperature of between 500 and 700° C.

22 . Method as claimed in any of claims 13 to 21 wherein the reaction is carried out in a sealed vessel.

23 . Graphitic carbon nitride obtained by a method as claimed in any of claims 13 to 22 .

24 . Apparatus for preparing graphitic carbon nitride in accordance with any preceding claim.

Assignees

• Univ Liverpool

Inventors

• Cooper Andrew I
• Bojdys Michael J

Classifications

• B01J6/008

  Pyrolysis reactions (of hydrocarbons C10G9/00) · CPC title

• H01L29/24

  Electricity · mapped topic

• C01B21/0605 Primary

  Binary compounds of nitrogen with carbon · CPC title

• H10D62/80

  characterised by the materials · CPC title

• H10D30/6741

  Group IV materials, e.g. germanium or silicon carbide (TFTs having oxide semiconductors H10D30/6755) · CPC title