G-C3N4 film

US10252253B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10252253-B2
Application numberUS-201314653641-A
CountryUS
Kind codeB2
Filing dateDec 24, 2013
Priority dateDec 21, 2012
Publication dateApr 9, 2019
Grant dateApr 9, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

In order to provide g-C3N4 capable of being simply and easily handled, a g-C3N4 film is produced by heating, as a starting material, a compound represented by X+mYm−, wherein X+ is a guanidium ion or the like ion, and Ym− is an anion, to vaporize the compound or its reactant, and depositing the compound or the reactant over a surface of a base material heated, the surface carrying negative electric charges or having π electrons, so that the compound or the reactant is polymerized on the base material to generate g-C3N4.

First claim

Opening claim text (preview).

The invention claimed is: 1. A graphitic carbon nitride film having a single-layer or multilayer sheet structure in which melem structural units are crosslinked in two-dimensional directions, wherein a peak obtained for the graphitic carbon nitride film having a multilayer sheet structure by out-of-plane X-ray diffraction is derived from a sheet-to-sheet distance only, and wherein the film does not have a reflection peak which is derived from the inter-melem skeleton and corresponds to a peak in the vicinity of 2θ=12.5°. 2. The graphitic carbon nitride film according to claim 1 , wherein the sheet-to-sheet distance is in a range from 3.17 Å to 3.26 Å. 3. The graphitic carbon nitride film according to claim 1 , wherein the graphitic carbon nitride film produces a photocurrent of not less than 0.8 μA/cm 2 when the graphitic carbon nitride film is irradiated with visible light of not less than 420 nm while a constant voltage of 0.2 V is applied to the graphitic carbon nitride film. 4. The graphitic carbon nitride film according to claim 1 , wherein the graphitic carbon nitride film has transparency. 5. The graphitic carbon nitride film according to claim 1 , wherein the graphitic carbon nitride film being produced by a method for producing a graphitic carbon nitride film, the method comprising the steps of: heating, as a starting material, a compound represented by X + m Y + wherein X + is selected from a guanidium ion, a guanidine derivative ion represented by Formula (I) below, and a guanidine derivative ion represented by Formula (II) below, Y m− is an anion, and m is a valence of Y, wherein, in Formulae (I) and (II), R 1 , R 2 , and R 3 are independently selected from an amino group, a nitro group, an alkyl group having 1 to 10 carbon atoms, —(C 2 H 4 O) n —R 4 (where n is 1 to 10, and R 4 is an alkyl group having 1 to 4 carbon atoms), halogen, and a primary amide group, to vaporize the compound or its reactant; and depositing the compound or the reactant over a surface of a base material heated, the surface carrying negative electric charges or having π electrons, so that the compound or the reactant is polymerized on the base material to generate a graphitic carbon nitride. 6. A base material having the graphitic carbon nitride film according to claim 5 fixed on a surface thereof. 7. An electrically conductive substrate having the graphitic carbon nitride film according to claim 5 fixed on a surface thereof.

Assignees

Inventors

Classifications

  • Peri-condensed systems · CPC title

  • B01J27/24Primary

    Nitrogen compounds · CPC title

  • characterised by the material · CPC title

  • Binary compounds of nitrogen with carbon · CPC title

  • the coating containing organic compounds · CPC title

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What does patent US10252253B2 cover?
In order to provide g-C3N4 capable of being simply and easily handled, a g-C3N4 film is produced by heating, as a starting material, a compound represented by X+mYm−, wherein X+ is a guanidium ion or the like ion, and Ym− is an anion, to vaporize the compound or its reactant, and depositing the compound or the reactant over a surface of a base material heated, the surface carrying negative elec…
Who is the assignee on this patent?
Riken
What technology area does this patent fall under?
Primary CPC classification B01J27/24. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Apr 09 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).