Tunneling diode using graphene-silicon quantum dot hybrid structure and method of manufacturing the same
US-9935207-B2 · Apr 3, 2018 · US
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Patent family 55350859
This patent family groups 2 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 55350859 |
| Family type | — |
| Earliest priority | Aug 21, 2014 |
| First filing country | US |
| Member publications | 2 |
| Countries | US |
| Representative publication | US9935207B2 — Tunneling diode using graphene-silicon quantum dot hybrid structure and method of manufacturing the same |
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US9935207B2 — Tunneling diode using graphene-silicon quantum dot hybrid structure and method of manufacturing the same (published Apr 3, 2018)
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