Amplifier with base current reuse

Patent metadata

Field	Value
Publication number	US-2017207752-A1
Application number	US-201715418434-A
Country	US
Kind code	A1
Filing date	Jan 27, 2017
Priority date	Sep 19, 2014
Publication date	Jul 20, 2017
Grant date	—

Abstract

An RF amplifier module that has a plurality of amplifiers wherein at least one of the amplifiers is powered via an envelope tracking module. The biasing input of at least one of the amplifiers is provided to the first amplifier to power the first amplifier to reduce power consumption. The first amplifier may also be powered via fixed biasing to provide greater stability of the module.

First claim

What is claimed is:

1 . A power amplifier module for an RF communications circuit, the module comprising:
a driver stage amplifier having an input that receives an RF signal, the driver stage amplifier powered by a supply voltage which is applied across the driver stage amplifier to amplify the RF signal; a final stage amplifier that receives an amplified RF signal from an output of the driver stage amplifier, that is powered by a supply voltage applied across the final stage amplifier, and that provides an amplified output signal, a bias current applied to the input of the final stage amplifier and applied to power the driver stage amplifier to reduce the current that flows through the driver stage amplifier; and an envelope tracking module that provides power to at least one of the driver stage amplifier and final stage amplifier.

2 . The module of claim 1 wherein the envelope tracking module provides power to the final stage amplifier.

3 . The module of claim 2 wherein the driver stage amplifier is powered from a fixed power source.

4 . The module of claim 3 wherein the fixed power source includes a battery.

5 . The module of claim 2 wherein the envelope tracking module provides power to both the driver stage amplifier and the final stage amplifier.

6 . The module of claim 1 wherein the driver stage amplifier includes a first transistor, the final stage amplifier includes a second transistor, a base of the first transistor forms the input of the driver stage amplifier, a collector of the first transistor forms the output of the driver stage amplifier and is connected to a base of the second transistor which forms the input of the final stage amplifier, and a collector of the second transistor forms the output of the final stage amplifier.

7 . The module of claim 6 wherein the base of the second transistor is biased by a current and is electrically connected to an emitter of the driver stage amplifier.

8 . The module of claim 1 wherein re-using the base current biasing of the final stage amplifier to power the input stage amplifier results in at an approximate efficiency improvement of 3% power added efficiency.

9 . An RF communications device comprising:
an RF input and an RF output; a dual stage power module having first and second amplifiers, the input of the first amplifier receiving an RF signal from the RF input, the output of the first amplifier provided to the input of the second amplifier which also receives a bias signal, and the output of the second amplifier provided to the RF output; a power supply that provides power to both the first and second amplifiers, at least one of the first and second amplifiers provided power based on envelope tracking of the RF signal; and an interconnect that interconnects the input of the second amplifier to the power supply of the first amplifier so that the bias signal is provided to the power supply of the first amplifier to provide power to the first amplifier.

10 . The device of claim 9 wherein the envelope tracking module provides power to the second amplifier.

11 . The device of claim 10 wherein the first amplifier is powered from a fixed power source.

12 . The device of claim 11 wherein the fixed power source includes a battery.

13 . The device of claim 10 wherein the envelope tracking module provides power to both the first amplifier and the second amplifier.

14 . The device of claim 9 wherein the first amplifier includes a first transistor, the second amplifier includes a second transistor, a base of the first transistor forms the input of the first amplifier, a collector of the first transistor forms the output of the first amplifier and is connected to a base of the second amplifier which forms the input of the second amplifier, and a collector of the second transistor forms the output of the second amplifier.

15 . The device of claim 14 wherein the base of the second transistor is biased by a current and is electrically connected to an emitter of the first amplifier.

16 . The device of claim 9 further comprising a switching network that switches between a transmit and a receive mode.

17 . The device of claim 16 further comprising a processor and computer readable medium that controls the envelope tracking module and the switching network.

18 . A method of amplifying RF signals, the method comprising:
amplifying a first signal in a first amplifier; providing the output of the first amplifier to a second amplifier; providing power to the first and second amplifiers; biasing the input of the second amplifier with a biasing signal; and providing at least a portion of the biasing signal applied to the second amplifier to the first amplifier to power the first amplifier.

19 . The method of claim 18 wherein powering the first and second amplifiers includes detecting the envelop of the first signal and providing variable power to at least one of the first and second amplifiers based at least in part on the envelope of the first signal.

20 . The method of claim 19 wherein providing variable power to at least one of the first and second amplifiers includes providing variable power the second amplifier and providing fixed power to the first amplifier.

Assignees

• Skyworks Solutions Inc

Inventors

• Lehtola Philip John

Classifications

• H03F2200/18

  the bias of the gate of a FET being controlled by a control signal · CPC title

• H03F2200/516

  Some amplifier stages of an amplifier use supply voltages of different value · CPC title

• H03F3/21

  with semiconductor devices only {(H03F3/245 takes precedence)} · CPC title

• H03F3/19

  with semiconductor devices only · CPC title

• H03F1/302

  in bipolar transistor amplifiers (H03F1/303, H03F1/305, H03F1/307 take precedence) · CPC title