Method of manufacturing semiconductor device and substrate processing apparatus for forming film including at least two different elements

Patent metadata

Field	Value
Publication number	US-2017200599-A1
Application number	US-201715468627-A
Country	US
Kind code	A1
Filing date	Mar 24, 2017
Priority date	Nov 26, 2008
Publication date	Jul 13, 2017
Grant date	—

Abstract

Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.

First claim

What is claimed is:

1 . A method of manufacturing a semiconductor device, comprising: forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate; and (b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate to modify the first layer without saturating a modifying reaction of the first layer by the second gas.

2 . The method of claim 1 , wherein a discontinuous layer is formed as the first layer in (a).

3 . The method of claim 1 , wherein a layer, in which at least one of a discontinuous layer or a continuous layer is overlapped, is formed as the first layer in (a).

4 . A substrate processing apparatus of claim 1 , wherein the substrate processing apparatus comprises:
a process vessel configured to accommodate the substrate; a first gas supply system configured to supply the first gas that includes the first element into the process vessel; a second gas supply system configured to supply the second gas that includes the second element different from the first element into the process vessel; a heater configured to heat the substrate accommodated in the process vessel; a pressure adjustment unit configured to adjust an inside pressure of the process vessel; and a controller configured to control the first gas supply system, the second gas supply system, the heater, and the pressure adjustment unit to perform an act of forming the film on the substrate.

5 . The substrate processing apparatus of claim 4 , wherein the controller is configured to control the first gas supply system, the heater, and the pressure adjustment unit such that a discontinuous layer is formed as the first layer in (a).

6 . The substrate processing apparatus of claim 4 , wherein the controller is configured to control the first gas supply system, the heater, and the pressure adjustment unit such that a layer, in which at least one of a discontinuous layer or a continuous layer is overlapped, is formed as the first layer in (a).

7 . A method of manufacturing a semiconductor device, comprising: forming a film on a substrate, the film including a first element, a second element different from the first element, and a third element different from the first and the second elements, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate; (b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate to form a layer that includes the second element on the first layer or to modify the first layer; and (c) forming a third layer that includes the first element, the second element, and the third element by supplying a third gas that includes the third element to the substrate to modify the second layer without saturating a modifying reaction of the second layer by the third gas.

8 . The method of claim 7 , wherein a discontinuous layer is formed as the first layer in (a).

9 . The method of claim 7 , wherein a layer, in which at least one of a discontinuous layer or a continuous layer is overlapped, is formed as the first layer in (a).

10 . A substrate processing apparatus of claim 7 , wherein the substrate processing apparatus comprises:
a process vessel configured to accommodate the substrate; a first gas supply system configured to supply the first gas that includes the first element into the process vessel; a second gas supply system configured to supply the second gas that includes the second element different from the first element into the process vessel; a third gas supply system configured to supply the third gas that includes the third element different from the first and the second elements into the process vessel; a heater configured to heat the substrate accommodated in the process vessel; a pressure adjustment unit configured to adjust an inside pressure of the process vessel; and a controller configured to control the first gas supply system, the second gas supply system, the third gas supply system, the heater, and the pressure adjustment unit to perform an act of forming the film on the substrate.

11 . The substrate processing apparatus of claim 10 , wherein the controller is configured to control the first gas supply system, the heater, and the pressure adjustment unit such that a discontinuous layer is formed as the first layer in (a).

12 . The substrate processing apparatus of claim 10 , wherein the controller is configured to control the first gas supply system, the heater, and the pressure adjustment unit such that a layer, in which at least one of a discontinuous layer or a continuous layer is overlapped, is formed as the first layer in (a).

13 . A method of manufacturing a semiconductor device, comprising: forming a film on a substrate, the film including a first element, a second element different from the first element, a third element different from the second element, and a fourth element different from the first and the third elements, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate; (b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate to form a layer that includes the second element on the first layer or to modify the first layer; (c) forming a third layer that includes the first element, the second element, and the third element by supplying a third gas that includes the third element to the substrate to form a layer that includes the third element on the second layer or to modify the second layer; and (d) forming a fourth layer that includes the first element, the second element, the third element, and the fourth element by supplying a fourth gas that includes the fourth element to the substrate to modify the third layer without saturating a modifying reaction of the third layer by the fourth gas.

14 . The method of claim 13 , wherein a discontinuous layer is formed as the first layer in (a).

15 . The method of claim 13 , wherein a layer, in which at least one of a discontinuous layer or a continuous layer is overlapped, is formed as the first layer in (a).

16 . A substrate processing apparatus of claim 13 , wherein the substrate processing apparatus comprises:
a process vessel configured to accommodate the substrate; a first gas supply system configured to supply the first gas that includes the first element into the process vessel; a second gas supply system configured to supply the second gas that includes the second element different from the first element into the process vessel; a third gas supply system configured to supply the third gas that includes the third element different from the second element into the process vessel; a fourth gas supply system configured to supply the fourth gas that includes the fourth element different from the first and the third elements into the process vessel; a heater configured to heat the substrate accommodated in the process vessel; a pr

Assignees

• Hitachi Int Electric Inc

Inventors

• Takasawa Yushin
• Karasawa Hajime
• Hirose Yoshiro

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title