Method of manufacturing printed circuit board
US-2024414849-A1 · Dec 12, 2024 · US
US2017196083A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017196083-A1 |
| Application number | US-201715398126-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 4, 2017 |
| Priority date | Jan 4, 2016 |
| Publication date | Jul 6, 2017 |
| Grant date | — |
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To provide a surface-treated copper foil that is excellent in adhesiveness to an insulating substrate at ordinary temperature, and is capable of suppressing the formation of blister on application of a thermal load of reflow soldering to a copper-clad laminate board constituted by the copper foil. A surface-treated copper foil having a surface-treated surface, the surface-treated copper foil satisfying one or more of the following conditions (1) to (3): by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion), (1) the N concentration is from 1.5 to 7.5 atomic %; (2) the C concentration is from 12 to 30 atomic %; and (3) the Si concentration is 3.1 atomic % or more and the O concentration is from 40 to 48 atomic %.
Opening claim text (preview).
1 . A surface-treated copper foil comprising a surface-treated surface, the surface-treated copper foil comprising an N concentration of from 1.5 atomic % to 7.5 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion). 2 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil comprises a C concentration of from 12 atomic % to 30 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion). 3 . A surface-treated copper foil comprising a surface-treated surface, the surface-treated copper foil comprising a C concentration of from 12 atomic % to 30 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion). 4 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil comprises an Si concentration of 3.1 atomic % or more and an O concentration of from 40 atomic % to 48 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion). 5 . The surface-treated copper foil according to claim 2 , wherein the surface-treated copper foil comprises an Si concentration of 3.1 atomic % or more and an O concentration of from 40 atomic % to 48 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion). 6 . The surface-treated copper foil according to claim 3 , wherein the surface-treated copper foil comprises an Si concentration of 3.1 atomic % or more and an O concentration of from 40 atomic % to 48 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion). 7 . A surface-treated copper foil comprising a surface-treated surface, the surface-treated copper foil comprising an Si concentration of 3.1 atomic % or more and an O concentration of from 40 atomic % to 48 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion). 8 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil comprises an N concentration of from 0.5 atomic % to 6.0 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 9 . The surface-treated copper foil according to claim 3 , wherein the surface-treated copper foil comprises an N concentration of from 0.5 atomic % to 6.0 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 10 . The surface-treated copper foil according to claim 5 , wherein the surface-treated copper foil comprises an N concentration of from 0.5 atomic 4 to 6.0 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 11 . The surface-treated copper foil according to claim 7 , wherein the surface-treated copper foil comprises an N concentration of from 0.5 atomic % to 6.0 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 12 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 13 . The surface-treated copper foil according to claim 3 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 14 . The surface-treated copper foil according to claim 5 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 15 . The surface-treated copper foil according to claim 7 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 16 . The surface-treated copper foil according to claim 10 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 17 . The surface-treated copper foil according to claim 16 , wherein the surface-treated copper foil satisfies one or two of the following conditions (A) and (B): (A) the surface-treated copper foil comprising an N concentration of from 3.7 atomic % to 6.4 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion); (B) the surface-treated copper foil comprising a C concentration of from 21.6 atomic % to 23.8 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion). 18 . The surface-treated copper foil according to claim 1 , wherein the surface-treated surface comprises a ten-point average surface roughness Rz of 1.5 μm or less. 19 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil is a rolled copper foil or an electrolytic copper foil. 20 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil is for attaching to a liquid crystal polymer. 21 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil is for attaching to a polyimide resin. 22 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil is used in a printed circuit board that is used under a high frequency exceeding 1 GHz. 23 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains, on a surface of the copper foil, one or more layers selected from the group consisting of a roughening treatment layer, a heat resistance treatment layer, a rust prevention treatment layer, a chromate treatment layer, and a silane coupling treatment layer. 24 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains, on a surface of the copper foil, one or more layers selected from the group consisting of a heat resistance treatment layer, a rust prevention treatment layer, a chromate treatment layer, and a silane coupling treatment layer. 25 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains a heat resistance treatment layer or a rust prevention treatment layer on a surface of the copper foil, contains a chromate
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