Surface-Treated Copper Foil

US2017196083A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2017196083-A1
Application numberUS-201715398126-A
CountryUS
Kind codeA1
Filing dateJan 4, 2017
Priority dateJan 4, 2016
Publication dateJul 6, 2017
Grant date

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

To provide a surface-treated copper foil that is excellent in adhesiveness to an insulating substrate at ordinary temperature, and is capable of suppressing the formation of blister on application of a thermal load of reflow soldering to a copper-clad laminate board constituted by the copper foil. A surface-treated copper foil having a surface-treated surface, the surface-treated copper foil satisfying one or more of the following conditions (1) to (3): by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion), (1) the N concentration is from 1.5 to 7.5 atomic %; (2) the C concentration is from 12 to 30 atomic %; and (3) the Si concentration is 3.1 atomic % or more and the O concentration is from 40 to 48 atomic %.

First claim

Opening claim text (preview).

1 . A surface-treated copper foil comprising a surface-treated surface, the surface-treated copper foil comprising an N concentration of from 1.5 atomic % to 7.5 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion). 2 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil comprises a C concentration of from 12 atomic % to 30 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion). 3 . A surface-treated copper foil comprising a surface-treated surface, the surface-treated copper foil comprising a C concentration of from 12 atomic % to 30 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion). 4 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil comprises an Si concentration of 3.1 atomic % or more and an O concentration of from 40 atomic % to 48 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion). 5 . The surface-treated copper foil according to claim 2 , wherein the surface-treated copper foil comprises an Si concentration of 3.1 atomic % or more and an O concentration of from 40 atomic % to 48 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion). 6 . The surface-treated copper foil according to claim 3 , wherein the surface-treated copper foil comprises an Si concentration of 3.1 atomic % or more and an O concentration of from 40 atomic % to 48 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion). 7 . A surface-treated copper foil comprising a surface-treated surface, the surface-treated copper foil comprising an Si concentration of 3.1 atomic % or more and an O concentration of from 40 atomic % to 48 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion). 8 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil comprises an N concentration of from 0.5 atomic % to 6.0 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 9 . The surface-treated copper foil according to claim 3 , wherein the surface-treated copper foil comprises an N concentration of from 0.5 atomic % to 6.0 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 10 . The surface-treated copper foil according to claim 5 , wherein the surface-treated copper foil comprises an N concentration of from 0.5 atomic 4 to 6.0 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 11 . The surface-treated copper foil according to claim 7 , wherein the surface-treated copper foil comprises an N concentration of from 0.5 atomic % to 6.0 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 12 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 13 . The surface-treated copper foil according to claim 3 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 14 . The surface-treated copper foil according to claim 5 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 15 . The surface-treated copper foil according to claim 7 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 16 . The surface-treated copper foil according to claim 10 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min (SiO 2 conversion). 17 . The surface-treated copper foil according to claim 16 , wherein the surface-treated copper foil satisfies one or two of the following conditions (A) and (B): (A) the surface-treated copper foil comprising an N concentration of from 3.7 atomic % to 6.4 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion); (B) the surface-treated copper foil comprising a C concentration of from 21.6 atomic % to 23.8 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion). 18 . The surface-treated copper foil according to claim 1 , wherein the surface-treated surface comprises a ten-point average surface roughness Rz of 1.5 μm or less. 19 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil is a rolled copper foil or an electrolytic copper foil. 20 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil is for attaching to a liquid crystal polymer. 21 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil is for attaching to a polyimide resin. 22 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil is used in a printed circuit board that is used under a high frequency exceeding 1 GHz. 23 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains, on a surface of the copper foil, one or more layers selected from the group consisting of a roughening treatment layer, a heat resistance treatment layer, a rust prevention treatment layer, a chromate treatment layer, and a silane coupling treatment layer. 24 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains, on a surface of the copper foil, one or more layers selected from the group consisting of a heat resistance treatment layer, a rust prevention treatment layer, a chromate treatment layer, and a silane coupling treatment layer. 25 . The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains a heat resistance treatment layer or a rust prevention treatment layer on a surface of the copper foil, contains a chromate

Assignees

Inventors

Classifications

  • Alloys based on copper · CPC title

  • Thermal details · CPC title

  • of nickel or cobalt · CPC title

  • on metallic substrates or on substrates of boron or silicon · CPC title

  • containing copper · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US2017196083A1 cover?
To provide a surface-treated copper foil that is excellent in adhesiveness to an insulating substrate at ordinary temperature, and is capable of suppressing the formation of blister on application of a thermal load of reflow soldering to a copper-clad laminate board constituted by the copper foil. A surface-treated copper foil having a surface-treated surface, the surface-treated copper foil sa…
Who is the assignee on this patent?
Jx Nippon Mining & Metals Corp
What technology area does this patent fall under?
Primary CPC classification H05K1/09. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Jul 06 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).