Power amplifier bias signal multiplexing
US-9621119-B2 · Apr 11, 2017 · US
US2017194919A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017194919-A1 |
| Application number | US-201715465273-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 21, 2017 |
| Priority date | Feb 13, 2015 |
| Publication date | Jul 6, 2017 |
| Grant date | — |
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A power amplifier die includes a semiconductor substrate, a power amplifier implemented on the semiconductor substrate, a radio-frequency input configured to receive a radio-frequency input signal having a radio-frequency component and a DC bias component, a bias circuit implemented on the semiconductor substrate, the bias circuit coupled to the power amplifier, and a bias tee circuit implemented on the semiconductor substrate, the bias tee circuit configured to receive the radio-frequency input signal and pass at least a portion of the DC component to the bias circuit and at least a portion of the radio-frequency component to the power amplifier.
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What is claimed is: 1 . A power amplifier die comprising: a semiconductor substrate; a power amplifier implemented on the semiconductor substrate; a radio-frequency input configured to receive a radio-frequency input signal having a radio-frequency component and a DC bias component; a bias circuit implemented on the semiconductor substrate, the bias circuit coupled to the power amplifier; and a bias tee circuit implemented on the semiconductor substrate, the bias tee circuit configured to receive the radio-frequency input signal and pass at least a portion of the DC component to the bias circuit and at least a portion of the radio-frequency component to the power amplifier. 2 . The power amplifier die of claim 1 wherein the bias tee circuit operates to at least partially decouple the radio-frequency component from the DC bias component. 3 . The power amplifier die of claim 1 wherein the bias tee circuit includes an inductor coupled to the bias circuit. 4 . The power amplifier die of claim 1 further comprising a voltage supply input configured to receive a supply voltage for amplifying an output of the power amplifier. 5 . The power amplifier die of claim 1 wherein the DC bias component of the radio-frequency input signal includes a bias current. 6 . The power amplifier die of claim 1 wherein the DC bias component of the radio-frequency input signal includes a bias voltage. 7 . The power amplifier die of claim 1 wherein the bias circuit includes current mirror circuitry. 8 . A power amplifier module comprising: a packaging substrate configured to receive a plurality of components; a power amplifier formed on a die that is mounted on the packaging substrate; a radio-frequency input configured to receive a radio-frequency input signal having a radio-frequency component and a DC bias component; a bias circuit coupled to the power amplifier; and a bias tee circuit formed on the die, the bias tee circuit configured to receive the radio-frequency input signal and pass at least a portion of the DC component to the bias circuit and at least a portion of the radio-frequency component to the power amplifier. 9 . The power amplifier module of claim 8 wherein the bias tee circuit operates to at least partially decouple the radio-frequency component from the DC bias component. 10 . The power amplifier module of claim 8 wherein the bias tee circuit includes a capacitor and a resistor connected in parallel. 11 . The power amplifier module of claim 8 wherein the DC bias component of the radio-frequency input signal includes a bias current. 12 . The power amplifier module of claim 8 wherein the bias circuit includes a current mirror. 13 . A wireless device comprising: a transceiver configured to process radio-frequency signals; a power amplifier subsystem communicatively coupled to the transceiver, the power amplifier subsystem including a power amplifier configured to generate an amplified radio-frequency signal; a radio-frequency node configured to receive a radio-frequency signal having a radio-frequency component and a DC bias component; a bias circuit coupled to the power amplifier; a bias tee circuit configured to receive the radio-frequency signal and pass at least a portion of the DC component to the bias circuit and at least a portion of the radio-frequency component to the power amplifier; a switch connected to the power amplifier subsystem and configured to selectively route the amplified radio-frequency signal to a pole of the switch; and an antenna in communication with the pole of the switch and configured to facilitate transmission of the amplified radio-frequency signal. 14 . The wireless device of claim 13 wherein the power amplifier subsystem further includes a bias signal generator configured to transmit a bias signal on a bias channel, and a radio-frequency transmission channel configured to transmit the radio-frequency signal. 15 . The wireless device of claim 14 wherein the power amplifier subsystem further includes a second bias tee circuit coupled to the bias channel and the radio-frequency transmission channel, the second bias tee circuit configured to couple the bias signal with a radio-frequency input signal to form the radio-frequency signal at least in part. 16 . The wireless device of claim 14 wherein the bias signal generator is a current generator. 17 . The wireless device of claim 14 wherein the bias signal generator is a voltage generator. 18 . The wireless device of claim 14 wherein the power amplifier subsystem further includes an input switching module. 19 . The wireless device of claim 14 wherein the power amplifier is implemented on a GaAs substrate and the bias signal generator is implemented on a silicon-on-insulator die. 20 . The wireless device of claim 14 wherein the power amplifier does not receive a bias signal separately from the radio-frequency node.
A voltage generating circuit being realised for biasing different circuit elements · CPC title
with semiconductor devices only · CPC title
Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal · CPC title
the gated amplifier being switched from a first band to a second band · CPC title
using a combination of several amplifiers (H03F3/60 takes precedence) · CPC title
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