Methods and structures for a split gate memory cell structure

Patent metadata

Field	Value
Publication number	US-2017194444-A1
Application number	US-201715413449-A
Country	US
Kind code	A1
Filing date	Jan 24, 2017
Priority date	Jun 28, 2013
Publication date	Jul 6, 2017
Grant date	—

Abstract

A method of forming a split gate memory cell structure using a substrate includes forming a gate stack comprising a select gate and a dielectric portion overlying the select gate. A charge storage layer is formed over the substrate including over the gate stack. A first sidewall spacer of conductive material is formed along a first sidewall of the gate stack extending past a top of the select gate. A second sidewall spacer of dielectric material is formed along the first sidewall on the first sidewall spacer. A portion of the first sidewall spacer is silicided using the second sidewall spacer as a mask whereby silicide does not extend to the charge storage layer.

First claim

What is claimed is:

1 .- 12 . (canceled)

13 . A split gate memory cell structure, comprising:
a gate stack over a semiconductor substrate, wherein the gate stack has a conductive portion with a top surface and a dielectric portion having a bottom surface on the top surface of the conductive portion, the gate stack having a first sidewall along a first side of the conductive portion and a first side of the dielectric portion; a charge storage layer along a first portion of the first sidewall and extending over a first portion of the substrate; a first sidewall spacer on the charge storage layer along the first portion of the first sidewall and extending over the first portion of the substrate, wherein the first sidewall spacer comprises conductive material and wherein the first portion of the first sidewall includes the first side of the conductive portion and a first portion of the first side of the dielectric portion; a second sidewall spacer on a top portion of the first sidewall spacer and along the first sidewall above the first sidewall spacer, wherein the second sidewall spacer comprises dielectric material; and a silicide layer on a top surface of the first sidewall spacer; wherein the silicide layer adjoins the second sidewall spacer and does not contact the charge storage layer below the dielectric portion.

14 . The split gate memory cell structure of claim 13 , further comprising a third sidewall spacer on the substrate adjacent to the charge storage layer, wherein the third sidewall spacer comprises dielectric material.

15 . The split gate memory cell structure of claim 14 further comprising a fourth sidewall spacer, wherein the fourth sidewall spacer comprises dielectric material.

16 . The split gate memory cell structure of claim 13 , wherein the conductive portion comprises polysilicon the dielectric portion comprises nitride, the first sidewall spacer comprises polysilicon, and the second sidewall spacer comprises nitride.

17 . The split gate memory cell structure of claim 13 , further comprising a first source/drain region in the substrate adjacent to the first sidewall spacer and a second source/drain region in the substrate adjacent to a second sidewall of the gate stack.

18 . The split gate memory cell structure of claim 13 , wherein the first portion of the gate stack is a select gate and the first sidewall spacer is a control gate.

19 .- 20 . (canceled)

21 . The structure of claim 17 , further comprising a second silicide layer over the first source/drain region and a third silicide layer over the second source/drain region.

22 . The structure of claim 13 , wherein the first sidewall spacer comprises polysilicon.

23 . The structure of claim 13 wherein the dielectric portion of the gate stack comprises nitride.

24 . The structure of claim 13 wherein the second sidewall spacer comprises nitride.

25 . The structure of claim 13 , wherein the charge storage layer comprises nanocrystals.

26 . The structure of claim 13 , wherein a portion of the second sidewall spacer is directly above the first sidewall spacer.

27 . A split gate memory cell structure, comprising:
a gate stack over the semiconductor substrate, wherein the gate stack has a conductive portion with a top surface and a dielectric portion having a bottom surface on the top surface of the conductive portion, the gate stack having a first sidewall along a side of the conductive portion and a side of the dielectric portion; a charge storage layer over the substrate including over the gate stack and along the first sidewall; a first conductive spacer ( 26 ) over the charge storage layer and along the first sidewall, wherein a top of the first conductive spacer is above the top surface of the conductive portion and below the top of the dielectric portion; a first sidewall ( 40 ) spacer extending from a lower surface of the first conductive spacer to a first height below the top of the first conductive spacer; a second sidewall ( 38 ) spacer along the first sidewall between the top of the first conductive spacer and the top surface of the dielectric portion, wherein a portion of the second sidewall spacer is directly above the conductive spacer; and silicide layer ( 46 ) on a top surface of the first conductive spacer between the first sidewall spacer and the second sidewall spacer.

28 . The method of claim 27 further comprising a first source/drain region in the semiconductor substrate adjacent the first conductive spacer and a second source/drain region in the semiconductor substrate adjacent a second sidewall of the gate stack opposite the first sidewall.

29 . The structure of claim 28 , further comprising a third sidewall spacer adjacent to the second sidewall.

30 . The structure of claim 28 , further comprising a second silicide layer over the first source/drain region and a third silicide layer over the second source/drain region.

31 . The structure of claim 27 , wherein the first conductive spacer comprises polysilicon.

32 . The structure of claim 27 wherein the dielectric portion of the gate stack comprises nitride.

33 . The structure of claim 27 wherein the second sidewall spacer comprises nitride.

34 . The structure of claim 27 , wherein the charge storage layer comprises nanocrystals.

Assignees

• Nxp Usa Inc

Inventors

• Hong Cheong Min
• Kang Sung-Taeg

Classifications

• H10D64/0112

  using conductive layers comprising silicides · CPC title

• H01L29/42328 Primary

  Electricity · mapped topic

• H01L29/66825

  Electricity · mapped topic

• H01L29/7882

  Electricity · mapped topic

• H01L21/28273

  Electricity · mapped topic