Power conversion apparatus
US-9246408-B2 · Jan 26, 2016 · US
US2017164497A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017164497-A1 |
| Application number | US-201514956825-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 2, 2015 |
| Priority date | Dec 2, 2015 |
| Publication date | Jun 8, 2017 |
| Grant date | — |
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A compact stacked power module including a positive direct-current-bus-voltage plate having a positive-plate surface and a negative direct-current-bus-voltage plate having a negative-plate surface. The compact stacked power module also includes an alternating-current output plate having opposing first and second output-plate surfaces, a first semiconductor switch contacting the negative-plate surface and the first output-plate surface, and a second semiconductor switch contacting the positive-plate surface and the second output-plate surface. The compact stacked power module further includes a capacitor contacting the negative-plate surface and the positive-plate surface, wherein the capacitor is electrically in parallel with the first and second semiconductor switches.
Opening claim text (preview).
What is claimed: 1 . A compact stacked power module including positive and negative direct-current-bus-voltage plates having respective positive and negative plate surfaces, the module comprising: an alternating-current output plate having a first output-plate surface opposite a second output-plate surface; a first semiconductor switch contacting the negative-plate surface and the first output-plate surface; a second semiconductor switch contacting the positive-plate surface and the second output-plate surface; and a capacitor (i) contacting the negative and positive plate surfaces and (ii) connected in parallel with the first and second semiconductor switches. 2 . The compact stacked power module of claim 1 , wherein at least one of the plates comprises a groove adjacent the capacitor to relieve forces in the module before the forces reach the capacitor in operation of the compact stacked power module. 3 . The compact stacked power module of claim 1 , wherein the positive direct-current-bus-voltage plate comprises a first material, primarily, and adjacent the capacitor, a second material softer than the first material to relieve forces developing in the module before the forces reach the capacitor in operation of the compact stacked power module. 4 . The compact stacked power module of claim 3 , wherein the first material is copper and the second material is a copper alloy. 5 . The compact stacked power module of claim 3 , wherein the second material is selected from a group consisting of gold, mercury, and a copper alloy. 6 . The compact stacked power module of claim 1 , wherein the capacitor is a leaded capacitor, connected by lead to the positive direct-current-bus-voltage plate to relieve forces developing in the module before the forces reach the capacitor in operation of the compact stacked power module. 7 . The compact stacked power module of claim 1 , wherein the capacitor is a first capacitor and the compact stacked power module comprises a second capacitor contacting the second negative-plate surface and the positive-plate surface and being electrically in parallel with the first and second semiconductor switches. 8 . The compact stacked power module of claim 1 , wherein the positive direct-current-bus-voltage plate, the negative direct-current-bus-voltage plate, and the alternating-current output plate are copper bus plates. 9 . The compact stacked power module of claim 1 , wherein each of the first and second semiconductor switches comprises an insulated-gate bipolar transistor or a metal-oxide-semiconductor field-effect transistor. 10 . The compact stacked power module of claim 1 , wherein each of said surfaces is substantially planar. 11 . The compact stacked power module of claim 1 , wherein: the alternating-current output plate is a first alternating-current output plate; the capacitor is a first capacitor; and the compact stacked power module further comprises: a second alternating-current output plate comprising a third output-plate surface opposite a fourth output-plate surface; a second capacitor extending between the negative-plate surface and the positive-plate surface; a third semiconductor switch contacting the negative-plate surface and the third output-plate surface; and a fourth semiconductor switch contacting the positive-plate surface and the fourth output-plate surface. 12 . The compact stacked power module of claim 1 , wherein the first semiconductor switch comprises a built-in body diode. 13 . The compact stacked power module of claim 1 , further comprising a diode connected in parallel with the first semiconductor switch between the positive-plate surface and the first output-plate surface. 14 . The compact stacked power module of claim 1 , wherein each of said plates has a width that is substantially greater than a thickness of the plate and a length that is substantially greater than the thickness of the plate. 15 . The compact stacked power module of claim 14 , wherein the width of each plate is at least ten times the width of the plate and the length is at least ten times the width of the plate. 16 . The compact stacked power module of claim 1 , wherein the capacitor is a first capacitor and the compact stacked power module comprises a second capacitor contacting the second negative-plate surface and the positive-plate surface electrically in parallel with the first and second semiconductor switches. 17 . A method, for making a compact stacked power module, comprising: arranging a capacitor, a positive direct-current-bus-voltage plate, and a negative direct-current-bus-voltage plate, wherein the capacitor is positioned between the positive direct-current-bus-voltage and the negative direct-current-bus-voltage plates, in contact with a positive-plate surface of the positive direct-current-bus-voltage plate and a negative-plate surface of the negative direct-current-bus-voltage plate; and arranging an alternating-current output plate, a first semiconductor switch, and a second semiconductor switch between the positive and negative direct-current-bus-voltage plates, wherein: the first semiconductor switch contacts the negative-plate surface and a first output-plate surface of the alternating-current output plate; and the second semiconductor switch contacts the positive-plate surface and a second output-plate surface of the alternating-current output plate. 18 . The method of claim 17 , wherein each of said plates has a width that is substantially greater than a thickness of the plate and a length that is substantially greater than the thickness of the plate. 19 . A compact stacked power module comprising: a positive direct-current-bus-voltage plate; a negative direct-current-bus-voltage plate; a capacitor extending between and in contact with the positive and negative direct-current-bus-voltage plates; two semiconductor switches arranged electrically in parallel with the capacitor; and a strain-relief feature selected from a group consisting of: one of the direct-current-bus-voltage plates comprising a groove adjacent the capacitor; one of the direct-current-bus-voltage plates comprising a first material primarily and a second material, softer than the first material, adjacent the capacitor; and the capacitor being a leaded capacitor, connected to at least one of the direct-current-bus-voltage plates by one or more leads. 20 . The compact stacked power module of claim 19 , wherein each of said plates has a width that is substantially greater than a thickness of the plate and a length that is substantially greater than the thickness of the plate.
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