BETA-Ga2O3 SINGLE-CRYSTAL SUBSTRATE

Patent metadata

Field	Value
Publication number	US-2017152610-A1
Application number	US-201515322848-A
Country	US
Kind code	A1
Filing date	Jun 29, 2015
Priority date	Jun 30, 2014
Publication date	Jun 1, 2017
Grant date	—

Abstract

A β-Ga 2 O 3 -based single-crystal substrate includes a β-Ga 2 O 3 -based single crystal, and a principal surface being a plane parallel to a b-axis of the β-Ga 2 O 3 -based single crystal. A maximum value of Δω on an arbitrary straight line on the principal surface that passes through a center of the principal surface is not more than 0.7264. The Δω is a difference between a maximum value and a minimum value of values obtained by subtracting ω a from ω s at each of measurement positions, where ω s represents an angle defined by an X-ray incident direction and the principal surface at a peak position of an X-ray rocking curve on the straight line and ω a represents an angle on an approximated straight line obtained by using least-squares method to linearly approximate a curve representing a relationship between the ω s and the measurement positions thereof.

First claim

1 . A β-Ga 2 O 3 -based single-crystal substrate, comprising:
a β-Ga 2 O 3 -based single crystal; and
a principal surface being a plane parallel to a b-axis of the β-Ga 2 O 3 -based single crystal,
wherein a maximum value of Δω on an arbitrary straight line on the principal surface that passes through a center of the principal surface is not more than 0.7264, and
wherein the Δω is a difference between a maximum value and a minimum value of values obtained by subtracting ω a from ω s at each of measurement positions, where ω s represents an angle defined by an X-ray incident direction and the principal surface at a peak position of an X-ray rocking curve on the straight line and ω a represents an angle on an approximated straight line obtained by using least-squares method to linearly approximate a curve representing a relationship between the ω s and the measurement positions thereof.

2 . A β-Ga 2 O 3 -based single-crystal substrate, comprising:
a β-Ga 2 O 3 -based single crystal; and
a principal surface being a plane parallel to a b-axis of the β-Ga 2 O 3 -based single crystal,
wherein a maximum value of α on an arbitrary straight line on the principal surface that passes through a center of the principal surface is not more than 0.141, and
wherein the α is an average value of absolute values obtained by subtracting ω a from ω s at each of measurement positions, where ω s represents an angle defined by an X-ray incident direction and the principal surface at a peak position of an X-ray rocking curve on the straight line and ω a represents an angle on an approximated straight line obtained by using least-squares method to linearly approximate a curve representing a relationship between the ω s and the measurement positions thereof.

3 . The β-Ga 2 O 3 -based single-crystal substrate according to claim 1 , wherein Δω on a straight line perpendicular to the b-axis of the β-Ga 2 O 3 -based single crystal is a maximum among the Δω on the arbitrary straight line.

4 . The β-Ga 2 O 3 -based single-crystal substrate according to claim 2 , wherein α on a straight line perpendicular to the b-axis of the β-Ga 2 O 3 -based single crystal is a maximum among the α on the arbitrary straight line.

5 . The β-Ga 2 O 3 -based single-crystal substrate according to claim 1 , comprising a dopant.

6 . The β-Ga 2 O 3 -based single-crystal substrate according to claim 5 , wherein the dopant is a Group IV element.

7 . The β-Ga 2 O 3 -based single-crystal substrate according to claim 6 , wherein the dopant is Sn or Si.

8 . The β-Ga 2 O 3 -based single-crystal substrate according to claim 1 , wherein the principal surface is a (−201) plane, a (101) plane or a (001) plane.

9 . The β-Ga 2 O 3 -based single-crystal substrate according to claim 1 , wherein the substrate is cut out from a flat-plate-shaped β-Ga 2 O 3 -based single crystal grown in the b-axis direction.

10 . The β-Ga 2 O 3 -based single-crystal substrate according to claim 1 , wherein the substrate comprises no twinning plane or a region that does not include a twinning plane that is not less than 2 inches in a maximum width in a direction perpendicular to an intersection line between the twinning plane and the principal surface.

Assignees

• Tamura Seisakusho Kk
• Koha Co Ltd

Inventors

• Watanabe Shinya
• Koshi Kimiyoshi
• Yamaoka Yu
• Iizuka Kazuyuki
• Takizawa Masaru
• Masui Takekazu

Classifications

• C30B29/16 Primary

  Oxides · CPC title

• C30B15/34

  Edge-defined film-fed crystal-growth using dies or slits · CPC title

• C01G15/00

  Compounds of gallium, indium or thallium · CPC title

• C01P2002/77

  by unit-cell parameters, atom positions or structure diagrams · CPC title