Half-Heusler Compounds for Use in Thermoelectric Generators

Patent metadata

Field	Value
Publication number	US-2017141282-A1
Application number	US-201514943069-A
Country	US
Kind code	A1
Filing date	Nov 17, 2015
Priority date	Nov 17, 2015
Publication date	May 18, 2017
Grant date	—

Abstract

A thermoelectric generator includes a hot side heat exchanger, a cold side heat exchanger, a plurality of n-type semiconductor legs arranged between the hot side heat exchanger and the cold side heat exchanger, and a plurality of p-type semiconductor legs arranged between the hot side heat exchanger and the cold side heat exchanger and alternating electrically in series with the plurality of n-type semiconductor legs. At least one of the plurality of n-type semiconductor legs and the plurality of p-type semiconductor legs is formed of an alloy having a half-Heusler structure and comprising Si and Sn with molar fractions of x Sn and 1-x Si, and x is less than 1.

First claim

1 . A thermoelectric generator comprising:
a hot side heat exchanger; a cold side heat exchanger; a plurality of n-type semiconductor legs arranged between the hot side heat exchanger and the cold side heat exchanger; and a plurality of p-type semiconductor legs arranged between the hot side heat exchanger and the cold side heat exchanger and alternating electrically in series with the plurality of n-type semiconductor legs, wherein at least one of the plurality of n-type semiconductor legs and the plurality of p-type semiconductor legs is formed of an alloy having a half-Heusler structure and comprising Si and Sb with molar fractions of x Sb and 1-x Si, and x is less than 1.

2 . The thermoelectric generator of claim 1 , wherein the alloy comprises NbCoSi 1-x Sn x and x is greater than 0.27.

3 . The thermoelectric generator of claim 1 , wherein the alloy comprises TaCoSi 1-x Sn x and x is greater than 0.21.

4 . The thermoelectric generator of claim 1 , wherein the alloy comprises TiNiSi 1-x Sn x and x is greater than 0.36.

5 . The thermoelectric generator of claim 1 , wherein the alloy comprises VCoSi 1-x Sn x and x is greater than 0.27.

6 . A vehicle comprising:
an engine; an exhaust system operably connected to the engine so as to receive exhaust from the engine and discharge the exhaust to an outlet, the exhaust system including a thermoelectric generator comprising:
a hot side heat exchanger;
a cold side heat exchanger;
a plurality of n-type semiconductor legs arranged between the hot side heat exchanger and the cold side heat exchanger; and
a plurality of p-type semiconductor legs arranged between the hot side heat exchanger and the cold side heat exchanger and connected alternating electrically in series with the plurality of n-type semiconductor legs,
wherein at least one of the plurality of n-type semiconductor legs and the plurality of p-type semiconductor legs is formed of an alloy having a half-Heusler structure and comprising Si and Sb with molar fractions of x Sb and 1-x Si, and x is less than 1.

7 . The vehicle of claim 6 , wherein the alloy comprises NbCoSi 1-x Sn x and x is greater than 0.27.

8 . The vehicle of claim 6 , wherein the alloy comprises TaCoSi 1-x Sn x and x is greater than 0.21.

9 . A semiconductor alloy comprising:
a first element selected from one of group IV-B and group V-B; a second element selected from group VIII; Sn with a molar fraction of x; Si with a molar fraction of 1-x; and a doping agent, wherein the semiconductor alloy has a half-Heusler structure and x is less than 1.

10 . The semiconductor alloy of claim 9 , wherein the first element includes one element selected from the group consisting of Nb, Ta, Ti, and V.

11 . The semiconductor alloy of claim 10 , wherein the second element includes one element selected from the group consisting of Co and Ni.

12 . The semiconductor alloy of claim 11 , wherein the first element is Nb, the second element is Co, and x is greater than 0.27.

13 . The semiconductor alloy of claim 12 , wherein x is between 0.27 and 0.50.

14 . The semiconductor alloy of claim 11 , wherein the first element is Ta, the second element is Co, and x is greater than 0.21.

15 . The semiconductor alloy of claim 14 , wherein x is between 0.21 and 0.50.

16 . The semiconductor alloy of claim 11 , wherein the first element is Ti, the second element is Ni, and x is greater than 0.36.

17 . The semiconductor alloy of claim 16 , wherein x is between 0.36 and 0.50.

18 . The semiconductor alloy of claim 11 , wherein the first element is V, the second element is Co, and x is greater than 0.27.

19 . The semiconductor alloy of claim 11 , wherein the semiconductor alloy is an n-type semiconductor element formulated as ABSi [(1-x)(1-y)] Sn [x(1-y)] D y , wherein A is the first element, B is the second element, and D is the doping agent.

20 . The semiconductor alloy of claim 11 , wherein the semiconductor alloy is a p-type semiconductor element formulated as A 1-y BSi (1-x) Sn x D y , wherein A is the first element, B is the second element, and D is the doping agent.

Assignees

• Bosch Gmbh Robert

Inventors

• Samsonidze Georgy
• Kozinsky Boris

Classifications

• C22C27/02

  Alloys based on vanadium, niobium, or tantalum · CPC title

• F01N5/025

  the device being thermoelectric generators · CPC title

• H01L35/325

  Electricity · mapped topic

• H01L35/22 Primary

  Electricity · mapped topic

• H10N10/8556 Primary

  comprising compounds containing germanium or silicon · CPC title