Thin film transistor and method for manufacturing same
US-9224871-B2 · Dec 29, 2015 · US
Field-effect transistor, display element, display, system, and method of manufacturing field-effective transistor
US2017141237A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017141237-A1 |
| Application number | US-201615349211-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 11, 2016 |
| Priority date | Nov 17, 2015 |
| Publication date | May 18, 2017 |
| Grant date | — |
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Abstract
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A field-effect transistor includes a gate electrode, a source electrode and a drain electrode to take out electric current according to an application of a voltage to the gate electrode, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, the semiconductor layer forming a channel between the source electrode and the drain electrode, a first insulating layer as gate insulating film disposed between the semiconductor layer and the gate electrode, and a second insulating layer covering at least a part of a surface of the semiconductor layer, the second insulating layer including an oxide including silicon and alkaline earth metal.
First claim
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What is claimed is: 1 . A field-effect transistor comprising: a gate electrode; a source electrode and a drain electrode configured to take out electric current according to an application of a voltage to the gate electrode; a semiconductor layer disposed adjacent to the source electrode and the drain electrode, the semiconductor layer forming a channel between the source electrode and the drain electrode; a first insulating layer as gate insulating film disposed between t…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US2017141237A1 cover?
- A field-effect transistor includes a gate electrode, a source electrode and a drain electrode to take out electric current according to an application of a voltage to the gate electrode, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, the semiconductor layer forming a channel between the source electrode and the drain electrode, a first insulating layer …
- Who is the assignee on this patent?
- Arae Sadanori, Ueda Naoyuki, Nakamura Yuki, and 6 more
- What technology area does this patent fall under?
- Primary CPC classification H01L29/78606. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu May 18 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).