Semiconductor devices and methods of manufacturing
US-12166025-B2 · Dec 10, 2024 · US
US2017141007A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017141007-A1 |
| Application number | US-201514943519-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 17, 2015 |
| Priority date | Nov 17, 2015 |
| Publication date | May 18, 2017 |
| Grant date | — |
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The present disclosure relates to a filler composition for a semiconductor package. The filler composition comprises carbon and silica.
Opening claim text (preview).
1 . A filler composition for a semiconductor package, comprising carbon and silica. 2 . The filler composition according to claim 1 , wherein an amount of carbon in the filler composition is at least 5% by weight of the filler composition. 3 . The filler composition according to claim 1 , wherein an amount of carbon in the filler composition is in a range of 30% to 85% by weight of the filler composition. 4 . The filler composition according to claim 1 , wherein an amount of silica in the filler composition is at least 5% by weight of the filler composition and up to 95% by weight of the filler composition. 5 . The filler composition according to claim 1 , wherein a ratio of amounts of carbon to silica, by weight, in the filler composition is at least 0.05. 6 . The filler composition according to claim 1 , wherein the filler composition includes particles having a median size, by weight, in a range of 0.1 μm to 50 μm. 7 . An underfill composition for a semiconductor package, comprising: a base material; and the filler composition according to claim 1 . 8 . The underfill composition according to claim 7 , wherein the base material includes an epoxy component. 9 . The underfill composition according to claim 7 , further comprising a silane coupling agent. 10 . The underfill composition according to claim 9 , wherein the silane coupling agent is selected from 3-aminopropyltriethoxysilane and 3-glycidoxypropyltriethoxysilane. 11 . A molding compound for a semiconductor package, comprising: a base material; and the filler composition according to claim 1 . 12 . The molding compound according to claim 11 , further comprising a silane coupling agent. 13 . An adhesive for a semiconductor package, comprising: a base material; and the filler composition according to claim 1 . 14 . The adhesive according to claim 13 , further comprising a silane coupling agent. 15 . A process for preparing a filler composition for a semiconductor package, comprising: (a) combining phytoliths and a solvent to form a dispersion; (b) modifying a pH value of the dispersion to form an acidic dispersion; (c) carrying out a heat treatment on the acidic dispersion; and (d) calcining at least a portion of the acidic dispersion in a reducing environment to form the filler composition. 16 . The process according to claim 15 , wherein the phytoliths are selected from husks, rice straws, and mixtures thereof. 17 . The process according to claim 15 , wherein carrying out the heat treatment in (c) includes applying a hydrothermal process at a temperature in a range of 50° C. to 200° C. 18 . The process according to claim 15 , wherein calcining in (d) is carried out at a temperature in a range of 600° C. to 1000° C. 19 . The process according to claim 15 , wherein calcining in (d) is carried out in a nitrogen environment. 20 . The process according to claim 15 , further comprising applying microwave irradiation to the filler composition.
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