Rare-earth oxide based coatings based on ion assisted deposition

Patent metadata

Field	Value
Publication number	US-2017133207-A1
Application number	US-201715413192-A
Country	US
Kind code	A1
Filing date	Jan 23, 2017
Priority date	Jul 20, 2013
Publication date	May 11, 2017
Grant date	—

Abstract

A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is equal to or less than the first average surface roughness.

First claim

What is claimed is:

1 . A component for a semiconductor processing chamber, comprising:
a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches; and a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is equal to or less than the first average surface roughness.

2 . The component of claim 1 , wherein the conformal protective layer comprises at least one of Y 4 Al 2 O 9 or YF 3 .

3 . The component of claim 1 , wherein the conformal protective layer has a thickness of 10-30 μm and a porosity of below 1%.

4 . The component of claim 1 , wherein the average surface roughness of the conformal protective layer is less than 8 micro-inches and the substantially uniform thickness of the conformal is about 0.5-7.0 μm.

5 . The component of claim 1 , wherein the ceramic body is a bulk sintered ceramic body comprising at least one of Y 2 O 3 , or a ceramic compound comprising Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 .

6 . The component of claim 1 , where the conformal protective layer comprises a protective layer stack comprising a plurality of plasma resistant rare earth oxide films comprising a first plasma resistant rare earth oxide film on the at least one surface and a second plasma resistant rare earth oxide film on the first plasma resistant rare earth oxide film, wherein each of the plurality of plasma resistant rare earth oxide films has a thickness of less than 20 microns.

7 . The component of claim 1 , wherein the ceramic body is a disc shaped body that has a diameter of at least 12 inches, and wherein a curvature of a lower surface of the ceramic body is less than about 50 microns over the lower surface.

8 . The component of claim 1 , wherein the component is usable at temperatures of about 0-1000° C. without the conformal protective layer cracking due to thermal shock.

9 . The component of claim 1 , wherein the conformal protective layer comprises crystalline Er 3 Al 5 O 12 having a dielectric constant of 7-12, a thermal conductivity of 14-25 W/m·K, a hermiticity of 4E-9 to 7E-9 cm 3 /s, a hardness of 5-6 GPa, a wear rate of 0.8-0.14 nm per hour, an erosion rate of about 0.24 μm per hour to a CF 4 etch chemistry, and an erosion rate of about 95 nm per hour to an H 2 /NF 3 plasma chemistry.

10 . The component of claim 1 , wherein the component is a lid, the lid further comprising:
a hole proximate to a center of the lid, wherein the conformal protective layer covers at least a portion of a wall of the hole, and wherein the conformal protective layer is thicker near the at least one surface of the lid and gradually becomes thinner deeper into the hole.

11 . The component of claim 1 , wherein the component is a lid, the lid further comprising:
a lip on the at least one surface at an outer perimeter of the lid that is to be in contact with walls of a chamber when the lid is closed, wherein the conformal protective layer does not cover the lip.

12 . A chamber component for a processing chamber comprising:
a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches; and a conformal protective layer on the at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film selected from a group consisting of a first ceramic compound comprising a mixture of Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 , and a second ceramic compound comprising a mixture of Y 2 O 3 , ZrO 2 , Er 2 O 3 , Gd 2 O 3 and SiO 2 , the conformal protective layer having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is equal to or less than the first average surface roughness.

13 . The component of claim 12 , wherein the conformal protective layer comprises the first ceramic compound comprising Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 , wherein the ceramic compound comprises 40 mol % to below 100 mol % of Y 2 O 3 , above 0 mol % to 60 mol % of ZrO 2 , and above 0 mol % to 10 mol % of Al 2 O 3 .

14 . The component of claim 12 , wherein the conformal protective layer comprises the first ceramic compound comprising Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 , wherein the ceramic compound comprises 40 mol % to 60 mol % of Y 2 O 3 , 30 mol % to 50 mol % of ZrO 2 , and 10 mol % to 20 mol % of Al 2 O 3 .

15 . The component of claim 12 , wherein the conformal protective layer comprises the first ceramic compound comprising Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 , wherein the ceramic compound comprises 40 mol % to 50 mol % of Y 2 O 3 , 20 mol % to 40 mol % of ZrO 2 , and 20 mol % to 40 mol % of Al 2 O 3 .

16 . The component of claim 12 , wherein the conformal protective layer comprises the first ceramic compound comprising Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 , wherein the ceramic compound comprises 70 mol % to below 90 mol % of Y 2 O 3 , above 0 mol % to 20 mol % of ZrO 2 , and 10 mol % to 20 mol % of Al 2 O 3 .

17 . The component of claim 12 , wherein the conformal protective layer comprises the first ceramic compound comprising Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 , wherein the ceramic compound comprises 60 mol % to below 80 mol % of Y 2 O 3 , above 0 mol % to 10 mol % of ZrO 2 , and 20 mol % to 40 mol % of Al 2 O 3 .

18 . The component of claim 12 , wherein the conformal protective layer comprises the first ceramic compound comprising Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 , wherein the ceramic compound comprises 40 mol % to below 60 mol % of Y 2 O 3 , above 0 mol % to 20 mol % of ZrO 2 , and 30 mol % to 40 mol % of Al 2 O 3 .

19 . A chamber component for a processing chamber comprising:
a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches; and a conformal protective layer on the at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film selected from a group consisting of Er 2 O 3 , Er 4 Al 2 O 9 , or ErAlO 3 , the conformal protective layer having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is equal to or less than the first average surface roughness.

20 . The chamber component of claim 19 , wherein the conformal protective layer comprises Er 2 O 3 and the ceramic body comprises Al 2 O 3 , the component further comprising:
a transition layer between the conformal protective layer and the ceramic body, wherein the transition layer comprises Er 3 Al 5 O 12 .

Assignees

• Applied Materials Inc

Inventors

• Sun Jennifer Y
• Kanungo Biraja P
• Firouzdor Vahid
• Zhang Ying

Classifications

• H10P72/0426

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P72/0418

  for etching · CPC title

• H10P72/0404 Primary

  for general liquid treatment, e.g. etching followed by cleaning · CPC title