Semiconductor device inspection device and semiconductor device inspection method

Patent metadata

Field	Value
Publication number	US-2017123003-A1
Application number	US-201715400064-A
Country	US
Kind code	A1
Filing date	Jan 6, 2017
Priority date	Nov 6, 2012
Publication date	May 4, 2017
Grant date	—

Abstract

A semiconductor device inspection system ( 1 ) includes a laser beam source ( 2 ), for emitting light, an optical sensor ( 12 ) for detecting the light reflected by the semiconductor device ( 10 ) from the light and outputting a detection signal, a frequency band setting unit ( 16 ) for setting a measurement frequency band and a reference frequency band with respect to the detection signal, a spectrum analyzer ( 15 ) for generating a measurement signal and a reference signal from the detection signals in the measurement frequency band and the reference frequency band, and a signal acquisition unit ( 17 ) for calculating a difference between the measurement signal and the reference signal to acquire an analysis signal. The frequency band setting unit ( 16 ) sets the reference frequency band to a frequency domain in which a level of the detection signal is lower than a level obtained by adding 3 decibels to a white noise level serving as a reference.

First claim

1 . A system for a semiconductor device serving as a device under test, the system comprising:
a light source configured to generate light to be irradiated the semiconductor device; a light detector configured to detect reflected light that is reflected from the semiconductor device and outputting output a detection signal; a frequency band setting unit configured to set a measurement frequency band and a reference frequency band with respect to the detection signal; a signal generating unit electrically coupling the frequency band setting unit and configured to generate a measurement signal from the detection signal in the measurement frequency band and generate a reference signal from the detection signal in the reference frequency band; and a signal acquisition unit electrically coupling the signal generating unit and configured to calculate a difference between the measurement signal and the reference signal to acquire an analysis signal, wherein, when a level of the detection signal is calculated based on power, the frequency band setting unit sets the reference frequency band to a frequency domain in which the level is lower than a level obtained by adding 3 decibels to a white noise level serving as a reference.

2 - 10 . (canceled)

11 . A method for inspecting a semiconductor device serving as a device under test, the method comprising:
irradiating the semiconductor device with light; detecting reflected light that is reflected from the semiconductor device and outputting a detection signal; setting a measurement frequency band and a reference frequency band with respect to the detection signal; generating a measurement signal from the detection signal in the measurement frequency band and generating a reference signal from the detection signal in the reference frequency band; and calculating a difference between the measurement signal and the reference signal to acquire an analysis signal, wherein, in the setting, when a level of the detection signal is calculated based on power, the reference frequency band is set to a frequency domain in which the level is lower than a level obtained by adding 3 decibels to a white noise level serving as a reference.

12 . A method for inspecting a semiconductor device serving as a device under test, the method comprising:
irradiating the semiconductor device with light, detecting reflected light that is reflected from the semiconductor device and outputting a detection signal; setting a measurement frequency band and a reference frequency band with respect to the detection signal; generating a measurement signal from the detection signal in the measurement frequency band and generating a reference signal from the detection signal in the reference frequency band; and calculating a difference between the measurement signal and the reference signal to acquire an analysis signal, wherein, in the setting, when a level of the detection signal is calculated based on amplitude energy, the reference frequency band is set to a frequency domain in which the level is lower than a level obtained by adding 6 decibels to a white noise level serving as a reference.

Assignees

• Hamamatsu Photonics Kk
• Hamamatsu Photonics Kk

Inventors

• Nakamura Tomonori

Classifications

• G01R31/2601

  Apparatus or methods therefor (G01R31/2607, G01R31/2642 take precedence) · CPC title

• G01R31/311 Primary

  of integrated circuits {(G01R31/31728 takes precedence)} · CPC title

• G01R31/26

  Testing of individual semiconductor devices (testing of photovoltaic devices H02S50/10; testing or measuring during manufacture or treatment {H10P74/00}) · CPC title

• G01R1/071

  containing electro-optic elements · CPC title

• G01R31/308

  using non-ionising electromagnetic radiation, e.g. optical radiation {(investigating or analysing materials by the use of optical means G01N21/00; image analysis G06T7/00)} · CPC title