Copper chloride, cvd raw material, copper wiring film, and method for producing copper chloride

US2017101718A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2017101718-A1
Application numberUS-201515316000-A
CountryUS
Kind codeA1
Filing dateApr 9, 2015
Priority dateJun 5, 2014
Publication dateApr 13, 2017
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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Provided are: copper chloride which can provide an organometallic complex that contains impurities at a small content and therefore has high purity; a CVD raw material; a copper wiring film; and a method for producing copper chloride. Copper chloride which has purity of 6 N or more and has an Ag content of 0.5 wtppm or less.

First claim

Opening claim text (preview).

1 .- 15 . (canceled) 16 . A method for producing copper chloride, which comprises providing a partition wall between a cathode and an anode, performing an electrochemical reaction in a hydrochloric acid-based electrolytic solution using pure copper having a purity of 6N or more as an raw material anode, and taking out a chloride precipitated on a surface of the anode, followed by washing with water and further drying to produce copper chloride having a purity of 6N or more and the Ag content of 0.5 wt ppm or less. 17 . A method for producing copper chloride, which comprises providing a partition wall between a cathode and an anode, performing an electrochemical reaction in a hydrochloric acid-based electrolytic solution using pure copper having a purity of 6N or more as a raw material anode, and taking out a chloride precipitated on a surface of the anode, followed by washing with water and further drying to produce copper chloride having a purity of 6N or more and a total content of one or more impurities selected from the group consisting of Na, Mg, Ti, Cr, Mn, Fe, Co, Ni, Zn, As, Ag, Cd, In, Sn, Tl, and Pb of 1.0 wt ppm or less. 18 . The method for producing copper chloride according to claim 16 or 17 , which includes adjusting the pH of an electrolytic solution in a range of 1 to 3 in the electrochemical reaction to produce copper(I) chloride. 19 . The method for producing copper chloride according to claim 16 or 17 , which includes adjusting the pH of an electrolytic solution in a range of 9 to 10 in the electrochemical reaction to produce copper(II) chloride. 20 . The method for producing copper chloride according to claim 18 , which includes dissolving copper(I) chloride produced by the electrochemical reaction with an acid in the presence of an oxidizing agent, followed by heating and evaporation to dryness to produce copper(II) chloride. 21 . The method for producing copper chloride according to claim 20 , which includes heating the copper(I) chloride at 200 to 300° C. in vacuum, or in inert gas atmosphere, or in the atmosphere, or in a chlorine gas atmosphere. 22 . The method for producing copper chloride according to claim 20 or 21 , wherein the acid is hydrochloric acid, and the oxidizing agent is a solution composed of any one or more oxidizing agents of hydrogen peroxide (H 2 O 2 ) or hypochlorous acid (HClO), chlorous acid (HClO 2 ), chloric acid (HClO 3 ), and perchloric acid (HClO 4 ). 23 . The method for producing copper chloride according to claim 21 , wherein the acid is hydrochloric acid, and the oxidizing agent is a solution composed of any one or more oxidizing agents of hydrogen peroxide (H 2 O 2 ) or hypochlorous acid (HClO), chlorous acid (HClO 2 ), chloric acid (HClO 3 ), and perchloric acid (HClO 4 ).

Assignees

Inventors

Classifications

  • Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

  • comprising ion-exchange membranes in or on which electrode material is embedded · CPC title

  • from metal halides · CPC title

  • C25B1/26Primary

    Chlorine; Compounds thereof (by simultaneous production of alkali metal hydroxides and chlorine, oxyacids or salts of chlorine C25B1/34) · CPC title

  • characterised by shape or form · CPC title

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What does patent US2017101718A1 cover?
Provided are: copper chloride which can provide an organometallic complex that contains impurities at a small content and therefore has high purity; a CVD raw material; a copper wiring film; and a method for producing copper chloride. Copper chloride which has purity of 6 N or more and has an Ag content of 0.5 wtppm or less.
Who is the assignee on this patent?
Jx Nippon Mining & Metals Corp
What technology area does this patent fall under?
Primary CPC classification C25B1/26. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Apr 13 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).