Vapor phase deposition of organic films

Patent metadata

Field	Value
Publication number	US-2017100742-A1
Application number	US-201514879962-A
Country	US
Kind code	A1
Filing date	Oct 9, 2015
Priority date	Oct 9, 2015
Publication date	Apr 13, 2017
Grant date	—

Abstract

Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.

First claim

1 . An apparatus for organic film deposition, comprising:
a vessel configured for vaporizing an organic reactant to form a reactant vapor; a reaction space configured to accommodate a substrate and in selective fluid communication with the vessel; and a control system configured to:
maintain the reactant in the vessel at or above a temperature A;
maintain the substrate at a temperature B, the temperature B being lower than the temperature A;
transport the reactant vapor from the vessel to the substrate; and
deposit an organic film on the substrate.

2 . The apparatus of claim 1 , wherein the organic film comprises a polymer.

3 . The apparatus of claim 1 , wherein the vessel contains a solid at room temperature and atmospheric pressure.

4 . The apparatus of claim 1 , wherein the vessel contains a dianhydride.

5 . The apparatus of claim 1 , wherein the vessel contains a pyromellitic dianhydride (PMDA).

6 . The apparatus of claim 1 , wherein the control system is further configured to maintain the ratio of temperature A to temperature B in Kelvin between about 1 and about 1.25.

7 . The apparatus of claim 1 , wherein the control system is further configured to maintain the temperature B between about 5° C. and about 50° C. lower than the temperature A.

8 . The apparatus of claim 1 , further comprising a gas line fluidly connecting the vessel to the reaction space, wherein the control system is further configured to maintain the gas line at a temperature C, the temperature C being higher than the temperature A.

9 . (canceled)

10 . (canceled)

11 . A method for vapor depositing an organic film, comprising:
vaporizing a first organic reactant in a vaporizer at a temperature A to form a first reactant vapor; exposing a substrate in a reaction space to the first reactant vapor at a temperature B, the temperature B being lower than the temperature A; and depositing the organic film on the substrate.

12 . The method of claim 11 , wherein the organic film comprises a polymer.

13 . (canceled)

14 . (canceled)

15 . The method of claim 12 , wherein the polymer comprises a polyimide.

16 . The method of claim 12 , wherein the polymer comprises a polyurea.

17 . The method of claim 11 , wherein the organic film comprises a polyamic acid.

18 . The method of claim 17 , further comprising converting the polyamic acid to a polyimide.

19 . The method of claim 11 , wherein the first reactant is a solid at room temperature and atmospheric pressure.

20 . The method of claim 11 , wherein the first reactant is a dianhydride.

21 . The method of claim 11 , wherein the first reactant comprises pyromellitic dianhydride (PMDA).

22 . The method of claim 11 , wherein the ratio of temperature A to temperature B in Kelvin is between about 1 and about 1.15.

23 . The method of claim 11 , wherein the temperature B is between about 5° C. and about 50° C. lower than the temperature A.

24 . (canceled)

25 . (canceled)

26 . (canceled)

27 . (canceled)

28 . (canceled)

29 . (canceled)

30 . The method of claim 11 , wherein exposing the substrate to the first reactant vapor comprises transporting the first reactant vapor through a gas line from the vaporizer to the reaction space, wherein the gas line is at a temperature C, the temperature C being higher than the temperature A.

31 .- 44 . (canceled)

Assignees

• Asm Ip Holding Bv

Inventors

• Pore Viljami J
• Tuominen Marko
• Huotari Hannu

Classifications

• B05D1/60 Primary

  Deposition of organic layers from vapour phase (vapour phase deposition in general C23C14/00, C23C16/00) · CPC title

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title

• H10K71/164

  using vacuum deposition · CPC title