Laser irradiation apparatus and laser irradiation method
US-2017103895-A1 · Apr 13, 2017 · US
Method for manufacturing p-type zinc oxide film
US2017053801A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017053801-A1 |
| Application number | US-201615346831-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 9, 2016 |
| Priority date | May 16, 2014 |
| Publication date | Feb 23, 2017 |
| Grant date | — |
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Abstract
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There is provided a production method which enables stable formation of a p-type zinc oxide film and also is suitable for enlarging the area of the film. The method for producing a p-type zinc oxide film according to the present invention comprises the steps of: placing a target containing a zinc source and a substrate in a gas atmosphere containing a nitrogen source and an oxygen source and having a gas pressure of 0.1 Pa to 100 Pa, and exposing the target to arc discharge, thereby forming a precursor film containing zinc and oxygen on the substrate; and annealing the precursor film in an oxidizing atmosphere, thereby forming a p-type zinc oxide film.
First claim
Opening claim text (preview).
What is claimed is: 1 . A method for producing a p-type zinc oxide film, comprising the steps of: placing a target containing a zinc source and a substrate in a gas atmosphere containing a nitrogen source and an oxygen source and having a gas pressure of 0.1 Pa to 100 Pa, and exposing the target to arc discharge, thereby forming a precursor film containing zinc and oxygen on the substrate; and annealing the precursor film in an oxidizing atmosphere, thereby forming a p-type zinc oxide film. 2 . The method according to claim 1 , wherein the formation of the precursor film using the arc discharge is conducted using an arc plasma gun. 3 . The method according to claim 1 , wherein the target is a metal zinc target. 4 . The method according to claim 1 , wherein the gas containing a nitrogen source and an oxygen source is a gas mixture of N 2 and O 2 . 5 . The method according to claim 4 , wherein the gas mixture is atmospheric air. 6 . The method according to claim 1 , wherein the annealing is conducted at a temperature ranging from 200° C. to 700° C. 7 . The method according to claim 1 , wherein the oxidizing atmosphere is air atmosphere or O 2 atmosphere.
Assignees
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Classifications
P-type · CPC title
Crystal orientations · CPC title
being crystalline insulating materials · CPC title
using transformation of metal, e.g. oxidation or nitridation · CPC title
using physical deposition, e.g. vacuum deposition or sputtering · CPC title
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- What does patent US2017053801A1 cover?
- There is provided a production method which enables stable formation of a p-type zinc oxide film and also is suitable for enlarging the area of the film. The method for producing a p-type zinc oxide film according to the present invention comprises the steps of: placing a target containing a zinc source and a substrate in a gas atmosphere containing a nitrogen source and an oxygen source and ha…
- Who is the assignee on this patent?
- Nagoya Inst Technology, Ngk Insulators Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3426. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Feb 23 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).