Method of manufacturing printed circuit board
US-2024414849-A1 · Dec 12, 2024 · US
US2017042036A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017042036-A1 |
| Application number | US-201615229194-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 5, 2016 |
| Priority date | Aug 6, 2015 |
| Publication date | Feb 9, 2017 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Provided herein is a carrier-attached copper foil having desirable fine circuit formability. The carrier-attached copper foil includes a carrier, an interlayer, and an ultrathin copper layer in this order. The maximum trough depth Sv as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and etching and removing the ultrathin copper layer after the carrier-attached copper foil is heat pressed against the resin substrate from the ultrathin copper layer side under the pressure of 20 kgf/cm 2 at 220° C. for 2 hours is 0.181 to 2.922 μm.
Opening claim text (preview).
What is claimed is: 1 . A carrier-attached copper foil comprising a carrier, an interlayer, and an ultrathin copper layer in this order, wherein the maximum trough depth Sv as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and etching and removing the ultrathin copper layer after the carrier-attached copper foil is heat pressed against the resin substrate from the ultrathin copper layer side under the pressure of 20 kgf/cm 2 at 220° C. for 2 hours is 0.181 to 2.922 μm. 2 . The carrier-attached copper foil according to claim 1 , wherein the level difference Sk of a core portion as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and etching and removing the ultrathin copper layer after the carrier-attached copper foil is heat pressed against the resin substrate from the ultrathin copper layer side under the pressure of 20 kgf/cm 2 at 220° C. for 2 hours is 0.095 to 0.936 μm. 3 . The carrier-attached copper foil according to claim 1 , wherein the projecting trough depth Svk as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and etching and removing the ultrathin copper layer after the carrier-attached copper foil is heat pressed against the resin substrate from the ultrathin copper layer side under the pressure of 20 kgf/cm 2 at 220° C. for 2 hours is 0.051 to 0.478 μm. 4 . The carrier-attached copper foil according to claim 2 , wherein the projecting trough depth Svk as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and etching and removing the ultrathin copper layer after the carrier-attached copper foil is heat pressed against the resin substrate from the ultrathin copper layer side under the pressure of 20 kgf/cm 2 at 220° C. for 2 hours is 0.051 to 0.478 μm. 5 . The carrier-attached copper foil according to claim 1 , wherein the trough space volume Vvv as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and etching and removing the ultrathin copper layer after the carrier-attached copper foil is heat pressed against the resin substrate from the ultrathin copper layer side under the pressure of 20 kgf/cm 2 at 220° C. for 2 hours is 0.003 to 0.020 μm 3 /μm 2 . 6 . The carrier-attached copper foil according to claim 2 , wherein the trough space volume Vvv as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and etching and removing the ultrathin copper layer after the carrier-attached copper foil is heat pressed against the resin substrate from the ultrathin copper layer side under the pressure of 20 kgf/cm 2 at 220° C. for 2 hours is 0.003 to 0.020 μm 3 /μm 2 . 7 . The carrier-attached copper foil according to claim 3 , wherein the trough space volume Vvv as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and etching and removing the ultrathin copper layer after the carrier-attached copper foil is heat pressed against the resin substrate from the ultrathin copper layer side under the pressure of 20 kgf/cm 2 at 220° C. for 2 hours is 0.003 to 0.020 μm 3 /μm 2 . 8 . The carrier-attached copper foil according to claim 4 , wherein the trough space volume Vvv as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and etching and removing the ultrathin copper layer after the carrier-attached copper foil is heat pressed against the resin substrate from the ultrathin copper layer side under the pressure of 20 kgf/cm 2 at 220° C. for 2 hours is 0.003 to 0.020 μm 3 /μm 2 . 9 . The carrier-attached copper foil according to claim 1 , wherein the ratio Sv/Svk of maximum trough depth Sv and projecting trough depth Svk as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and etching and removing the ultrathin copper layer after the carrier-attached copper foil is heat pressed against the resin substrate from the ultrathin copper layer side under the pressure of 20 kgf/cm 2 at 220° C. for 2 hours is 3.549 to 10.777. 10 . The carrier-attached copper foil according to claim 2 , wherein the ratio Sv/Svk of maximum trough depth Sv and projecting trough depth Svk as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and etching and removing the ultrathin copper layer after the carrier-attached copper foil is heat pressed against the resin substrate from the ultrathin copper layer side under the pressure of 20 kgf/cm 2 at 220° C. for 2 hours is 3.549 to 10.777. 11 . The carrier-attached copper foil according to claim 3 , wherein the ratio Sv/Svk of maximum trough depth Sv and projecting trough depth Svk as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and etching and removing the ultrathin copper layer after the carrier-attached copper foil is heat pressed against the resin substrate from the ultrathin copper layer side under the pressure of 20 kgf/cm 2 at 220° C. for 2 hours is 3.549 to 10.777. 12 . The carrier-attached copper foil according to claim 4 , wherein the ratio Sv/Svk of maximum trough depth Sv and projecting trough depth Svk as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and etching and removing the ultrathin copper layer after the carrier-attached copper foil is heat pressed against the resin substrate from the ultrathin copper layer side under the pressure of 20 kgf/cm 2 at 220° C. for 2 hours is 3.549 to 10.777. 13 . The carrier-attached copper foil according to claim 5 , wherein the ratio Sv/Svk of maximum trough depth Sv and projecting trough depth Svk as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and etching and removing the ultrathin copper layer after the carrier-attached copper foil is heat pressed against the resin substrate from the ultrathin copper layer side under the pressure of 20 kgf/cm 2 at 220° C. for 2 hours is 3.549 to 10.777. 14 . The carrier-attached copper foil according to claim 6 , wherein the ratio Sv/Svk of maximum trough depth Sv and projecting trough depth Svk as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and etching and removing the ultrathin copper layer after the carrier-attached copper foil is heat pressed against the resin substrate from the ultrathin copper layer side under the pressure of 20 kgf/cm 2 at 220° C. for 2 hours is 3.549 to 10.777. 15 . The carrier-attached copper foil according to claim 7 , wherein the ratio Sv/Svk of maximum trough depth Sv and projecting trough depth Svk as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and et
PCBs, i.e. printed circuit boards · CPC title
Wires; Strips; Foils · CPC title
comprising polyimides · CPC title
of copper · CPC title
Use of materials for the {conductive, e.g. } metallic pattern · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.