Semiconductor device having improved core and input/output device reliability

Patent metadata

Field	Value
Publication number	US-2017040310-A1
Application number	US-201615299282-A
Country	US
Kind code	A1
Filing date	Oct 20, 2016
Priority date	Jul 30, 2013
Publication date	Feb 9, 2017
Grant date	—

Abstract

A semiconductor device includes a semiconductor substrate having a core device and an IO device. The core device includes a gate interface layer and a high-k dielectric layer on the gate interface layer. The IO device includes a gate interface layer and a high-k dielectric layer on the gate interface layer. The gate interface layer of the core device and the gate interface layer of the IO device each are doped with fluoride ions

First claim

What is claimed is:

1 . A semiconductor device comprising:
a semiconductor substrate having a core device and an IO device, the core device comprising a gate interface layer and a high-k dielectric layer on the gate interface layer, the IO device comprising a gate interface layer and a high-k dielectric layer on the gate interface layer, wherein the gate interface layer of the core device and the gate interface layer of the IO device each are doped with fluoride ions, and wherein the high-k dielectric layer of the core device and the high-k dielectric layer of the IO device each are doped with fluoride ions.

2 . The semiconductor device of claim 1 , wherein the high-k dielectric layer of the core device and the high-k dielectric layer of the IO device each have a U-shaped cross-section.

3 . The semiconductor device of claim 1 , further comprising:
a work function on the high-k dielectric layer of the core device and a metal gate on the work function; and a work function on the high-k dielectric layer of the IO device and a metal gate on the work function.

Assignees

• Semiconductor Mfg Int Shanghai Corp

Inventors

• Xie Xinyun

Classifications

• H10D64/01348

  with substrate doping, e.g. N, Ge or C implantation, before formation of the insulator · CPC title

• H10D64/01338

  with a treatment, e.g. annealing, after the formation of the conductor · CPC title

• H01L29/78

  Electricity · mapped topic

• H01L21/823437

  Electricity · mapped topic

• H01L21/28176

  Electricity · mapped topic