Circuit board structure and manufacturing method thereof
US-2024138063-A1 · Apr 25, 2024 · US
US2017013713A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017013713-A1 |
| Application number | US-201615274363-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 23, 2016 |
| Priority date | Mar 15, 2013 |
| Publication date | Jan 12, 2017 |
| Grant date | — |
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Thicker electrodes are provided on microelectronic device using thermo-compression bonding. A thin-film electrical conducting layer forms electrical conduits and bulk depositing provides an electrode layer on the thin-film electrical conducting layer. An insulating polymer layer encapsulates the electrically thin-film electrical conducting layer and the electrode layer. Some of the insulating layer is removed to expose the electrode layer.
Opening claim text (preview).
1 . A method of fabricating or depositing electrode materials, comprising the steps of: depositing an electrically insulating polymer layer on a substrate, depositing a thin-film electrical conducting layer to form electrical conduits connecting, bulk depositing an electrode layer on said thin-film electrical conducting layer, depositing an encapsulating electrically insulating polymer layer on said thin-film electrical conducting layer and said electrode layer, removing some of said insulating layer covering said electrode layer, and releasing the electrode materials from said substrate. 2 . The method of fabricating or depositing electrode materials of claim 1 wherein said step of bulk depositing an electrode layer on said thin-film electrical conducting layer comprises bulk depositing a metal electrode layer on said thin-film electrical conducting layer. 3 . The method of fabricating or depositing electrode materials of claim 1 wherein said step of bulk depositing an electrode layer on said thin-film electrical conducting layer comprises bulk depositing a conducting polymer electrode layer on said thin-film electrical conducting layer. 4 . The method of fabricating or depositing electrode materials of claim 1 wherein said step of bulk depositing an electrode layer on said thin-film electrical conducting layer is accomplished using a combination of pressure, elevated temperature and ultrasonic energy to bond said electrode layer to said thin-film electrical conducting layer. 5 . The method of fabricating or depositing electrode materials of claim 1 wherein said step of bulk depositing an electrode layer on said thin-film electrical conducting layer is accomplished using a flip-chip bonder, die bonder, or diffusion bonder. 6 . The method of fabricating or depositing electrode materials of claim 1 wherein said step of bulk depositing an electrode layer on said thin-film electrical conducting layer comprises bulk depositing an electrode layer on said thin-film electrical conducting layer wherein said electrode layer has a thickness within the range of 1 to 50 micrometers. 7 . The method of fabricating or depositing electrode materials of claim 1 wherein said step of bulk depositing an electrode layer on said thin-film electrical conducting layer comprises bulk depositing platinum, iridium, titanium, doped diamond, tantalum, or niobium, or an alloy of platinum, iridium, titanium, doped diamond, tantalum, or niobium. 8 . The method of fabricating or depositing electrode materials of claim 1 wherein said step of bulk depositing an electrode layer on said thin-film electrical conducting layer comprises bulk depositing an electrode layer cut out of a metal foil using mechanical, laser, or chemical etching process. 9 . The method of fabricating or depositing electrode materials of claim 1 wherein said step of bulk depositing an electrode layer on said thin-film electrical conducting layer comprises bulk depositing an electrode layer using electroplating or electrodeposition or physical vapor deposition. 10 . The method of fabricating or depositing electrode materials of claim 1 wherein said step of bulk depositing an electrode layer on said thin-film electrical conducting layer comprises bulk depositing an electrode layer using direct ink writing. 11 . The method of fabricating or depositing electrode materials of claim 1 wherein said step of bulk depositing an electrode layer on said thin-film electrical conducting layer comprises bulk depositing an electrode layer using direct ink writing with conductive ink having small particles of electrode metal in a solvent. 12 . The method of fabricating or depositing electrode materials of claim 1 wherein said step of bulk depositing an electrode layer on said thin-film electrical conducting layer comprises bulk depositing an electrode layer using conductive ink coated on said thin-film electrical conducting layer wherein said conductive ink is raised to a temperature below the melting temperature of said thin-film electrical conducting layer. 13 . A microelectrode device, comprising: a device body having an underlying electrically insulating layer, a conductive thin-film layer on said underlying electrically insulating layer, at least one electrode embedded in said electrically insulating layer wherein said at least one electrode is a bulk deposited electrode, and at least one electrically conducting lead coupled to said at least one electrode. 14 . The microelectrode device of claim 13 wherein said bulk deposited electrode is a bulk deposited metal electrode. 15 . The microelectrode device of claim 13 wherein said bulk deposited electrode is a bulk deposited conducting polymer electrode. 16 . The microelectrode device of claim 13 wherein said bulk deposited electrode has a thickness within the range of 1 to 50 micrometers. 17 . The microelectrode device of claim 13 wherein said bulk deposited electrode is a platinum, iridium, titanium, doped diamond, tantalum, or niobium, or an alloy of platinum, iridium, titanium, doped diamond, tantalum, or niobium electrode. 18 . The microelectrode device of claim 13 wherein said bulk deposited electrode is a an electrode made of conductive ink having small particles of electrode metal in a solvent.
Inks comprising nanoparticles and specially adapted for being sintered at low temperature (H05K1/095 takes precedence) · CPC title
Use of materials for the {conductive, e.g. } metallic pattern · CPC title
Applying non-metallic protective coatings {(H05K3/0091 takes precedence; methods for intermediate insulating layers for build-up multilayer circuits H05K3/4673)} · CPC title
using {thick film techniques, e.g.} printing techniques to apply the conductive material {or similar techniques for applying conductive paste or ink patterns} · CPC title
Coating over pads, e.g. solder resist partly over pads · CPC title
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