Purification method and purification apparatus for off-gas

US2017007962A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2017007962-A1
Application numberUS-201515113110-A
CountryUS
Kind codeA1
Filing dateJan 19, 2015
Priority dateJan 24, 2014
Publication dateJan 12, 2017
Grant date

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  1. Title

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  2. Abstract

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Abstract

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The present invention relates to a purification method and a purification apparatus for off-gas. More specifically, the present invention relates to a purification method and a purification apparatus for off-gas, capable of lowering the concentration of hydrogen chloride and separating high-purity hydrogen from the off-gas, which is discharged after performing a polysilicon deposition process by a chemical vapor deposition reaction.

First claim

Opening claim text (preview).

1 - 18 . (canceled) 19 . A purification method for off-gas which comprises the steps of: separating the off-gas, which is discharged after performing a polysilicon deposition process by a chemical vapor deposition (CVD) reaction, into a non-condensed phase stream and a condensed phase stream; passing the non-condensed phase stream through a first catalytic reactor to lower the concentration of hydrogen chloride; and separating a chlorosilane-based compound of the condensed phase stream according to the boiling point. 20 . The purification method for off-gas according to claim 19 , wherein the catalyst used in the first catalytic reactor includes one or more selected from the group consisting of an ion exchange resin and a transition metal. 21 . The purification apparatus for off-gas according to claim 20 , wherein the ion exchange resin catalyst includes a cyclic amine compound, a styrene-based polymer containing an amine group, a styrene-divinyl benzene-based polymer containing an amine group, an acrylic polymer containing an amine group, or mixtures thereof. 22 . The purification method for off-gas according to claim 19 , wherein the off-gas includes hydrogen chloride (HCl), hydrogen (H 2 ), and chlorosilane-based compounds. 23 . The purification method for off-gas according to claim 19 , wherein the off-gas is condensed to greater than −30° C. and less than 10° C. to separate into the non-condensed phase stream and the condensed phase stream. 24 . The purification method for off-gas according to claim 19 , wherein the content of hydrogen chloride occupied in the non-condensed phase steam which has been passed through the catalytic reactor is reduced to about 80 mol % or more, with respect to the content before passing through the catalytic reactor. 25 . The purification method for off-gas according to claim 19 , wherein the non-condensed phase steam is converted into trichlorosilane and silicon tetrachloride by passing through the first catalytic reactor. 26 . The purification method for off-gas according to claim 19 , further comprising a step of separating the non-condensed phase stream passed through the first catalytic reactor into hydrogen stream and chlorosilane-based stream. 27 . The purification method for off-gas according to claim 26 , wherein the separated chlorosilane-based stream is joined with the condensed phase stream and transferred to a step of separating the chlorosilane-based compound of the condensed phase stream according to the boiling point. 28 . The purification method for off-gas according to claim 19 , wherein before performing a step of separating the chlorosilane-based compound of the condensed phase stream according to the boiling point, a step of lowering the concentration of hydrogen chloride contained in the condensed phase stream is further comprised. 29 . The purification method for off-gas according to claim 28 , wherein the step of lowering the concentration of hydrogen chloride contained in the condensed phase stream is performed by distilling the condensed phase stream or by pasting through the second catalytic reactor. 30 . The purification method for off-gas according to claim 29 , wherein the catalyst used in the first catalytic reactor includes one or more selected from the group consisting of an ion exchange resin and a transition metal.

Assignees

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Classifications

  • Removing halogens or halogen compounds · CPC title

  • Composition of the impurity · CPC title

  • Separation of hydrogen or hydrogen-containing gases from gaseous mixtures, e.g. purification · CPC title

  • Hydrochloric acid · CPC title

  • from CVD treatment or semi-conductor manufacturing · CPC title

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What does patent US2017007962A1 cover?
The present invention relates to a purification method and a purification apparatus for off-gas. More specifically, the present invention relates to a purification method and a purification apparatus for off-gas, capable of lowering the concentration of hydrogen chloride and separating high-purity hydrogen from the off-gas, which is discharged after performing a polysilicon deposition process b…
Who is the assignee on this patent?
Hanwha Chemical Corp
What technology area does this patent fall under?
Primary CPC classification B01D53/8659. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Thu Jan 12 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).