Pattern-forming method

Patent metadata

Field	Value
Publication number	US-2017003592-A1
Application number	US-201615267840-A
Country	US
Kind code	A1
Filing date	Sep 16, 2016
Priority date	Mar 24, 2014
Publication date	Jan 5, 2017
Grant date	—

Abstract

A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or —OR 2 , and R 2 represents a monovalent organic group.
SiX 4   (1)

First claim

1 . A pattern-forming method comprising:
forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; forming a resist pattern on an upper face side of the silicon-containing film; etching the silicon-containing film using the resist pattern as a mask; and removing the silicon-containing film with a basic aqueous solution, wherein the pattern-forming method does not comprise, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound.

2 . The pattern-forming method according to claim 1 , wherein the silicon-containing film is formed from a hydrolytic condensation product of a composition comprising a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds,
SiX 4   (1)
wherein, in the formula (1), X represents a halogen atom or —OR 2 , wherein R 2 represents a monovalent organic group.

3 . The pattern-forming method according to claim 1 , wherein the basic aqueous solution is a liquid comprising tetraalkylammonium hydroxide and water, or a liquid obtained by mixing ammonia, hydrogen peroxide and water.

4 . The pattern-forming method according to claim 1 , wherein the basic aqueous solution comprises none of hydrogen fluoride, a salt thereof, and a salt of a fluorine compound.

5 . The pattern-forming method according to claim 1 , wherein the removing of the silicon-containing film is carried out at a temperature of less than 100° C.

6 . The pattern-forming method according to claim 1 , wherein the silicon-containing film is formed from a composition comprising:
a hydrolytic condensation product of a silane compound comprising a compound represented by formula (2); and an organic solvent,
R 1 a SiX 4-a   (2)

wherein, in the formula (2), R 1 represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 5 carbon atoms, a cyano group, a cyanoalkyl group, an alkylcarbonyloxy group, an acid anhydride group, an alkenyl group, an aryl group or an aralkyl group, wherein the alkyl group is unsubstituted or substituted with a fluorine atom, and the aryl group and the aralkyl group are unsubstituted or substituted; X represents a halogen atom or —OR 2 , wherein R 2 represents a monovalent organic group; and a is an integer of 0 to 3, wherein in a case where R 1 and X are each present in a plurality of number, a plurality of R 1 s are identical or different and a plurality of Xs are identical or different.

7 . The pattern-forming method according to claim 6 , wherein the silane compound comprises an aromatic ring.

8 . The pattern-forming method according to claim 6 , wherein the silane compound comprises the acid anhydride group.

Assignees

• Jsr Corp

Inventors

• Ishikawa Masayoshi
• Tanaka Hiromitsu
• Kawazu Tomoharu
• Suzuki Junya
• Seko Tomoaki
• Takimoto Yoshio

Classifications

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P76/204

  of organic photoresist masks · CPC title

• H10P50/283

  by chemical means · CPC title