Micromechanical component with a reduced contact surface and its fabrication method

Patent metadata

Field	Value
Publication number	US-2016376147-A1
Application number	US-201615171002-A
Country	US
Kind code	A1
Filing date	Jun 2, 2016
Priority date	Jun 25, 2015
Publication date	Dec 29, 2016
Grant date	—

Abstract

The invention relates to a silicon-based component with at least one reduced contact surface which, formed from a method combining at least one oblique side wall etching step with a “Bosch” etch of vertical side walls, improves, in particular, the tribology of components formed by micromachining a silicon-based wafer.

First claim

What is claimed is:

1 . A method for fabricating a silicon-based micromechanical component comprising the following steps:
a) taking a silicon-based substrate; b) forming a mask pierced with holes on a horizontal portion of the substrate; c) etching, in an etching chamber, substantially vertical walls, in a part of the thickness of the substrate, from holes of the mask, in order to form peripheral walls of the micromechanical component; d) forming a protective layer on the vertical walls, leaving the bottom of the etch made in step c) without any protective layer; e) etching, in the etching chamber, predetermined oblique walls, in the remaining thickness of the substrate from the bottom, which has no protective layer, in order to form oblique lower surfaces beneath the peripheral walls of the micromechanical component; f) releasing the micromechanical component from the mask and from the substrate.

2 . The method according to claim 1 , wherein step c) is achieved by alternating an etching gas flow and a passivation gas flow in the etching chamber in order to form substantially vertical walls.

3 . The method according to claim 1 , wherein step d) comprises the following phases:
d1) oxidizing the etch obtained in step c) to form the protective silicon oxide layer; d2) directionally etching the protective layer in order to selectively remove only the part of the protective layer on the bottom of the etch made in step c).

4 . The method according to claim 1 , wherein step e) is achieved by mixing an etching gas and a passivation gas in the etching chamber in order to form oblique walls.

5 . The method according to claim 4 , wherein, in step e), the continuous etching and passivation gas flows are pulsed to enhance the etch at the bottom level of the etch.

6 . A micromechanical component obtained from the method according to claim 1 , wherein the micromechanical component comprises a silicon-based body whose peripheral wall includes a first substantially vertical surface and a second oblique surface thereby decreasing the contact surface of the peripheral wall.

7 . The micromechanical component according to claim 6 , wherein the micromechanical component further comprises at least one hole ( 60 ) comprising an internal wall also including a first substantially vertical surface and a second substantially oblique surface.

8 . The micromechanical component according to claim 6 , wherein the micromechanical component forms all or part of an element of the movement or external parts of a timepiece.

Assignees

• Nivarox Far Sa

Inventors

• Gandelhman Alex
• Pin Andre

Classifications

• B81C2201/0188

  Selective deposition techniques not provided for in B81C2201/0184 - B81C2201/0187 · CPC title

• B81C1/00

  Manufacture or treatment of devices or systems in or on a substrate (B81C3/00 takes precedence) · CPC title

• B81B7/0074

  3D packaging, i.e. encapsulation containing one or several MEMS devices arranged in planes non-parallel to the mounting board · CPC title

• B81B7/0032 Primary

  Packages or encapsulation (processes for packaging MEMS B81C1/00261; packaging of smart-MEMS B81C1/0023) · CPC title

• G04B13/027

  planar toothing: shape and design (adjusting the backlash of the arbors G04B35/00) · CPC title